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Strained quantum well structure

  • US 5,671,242 A
  • Filed: 08/16/1995
  • Issued: 09/23/1997
  • Est. Priority Date: 09/02/1994
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a substrate having a lattice constant as ; and

    a stress compensation strained quantum well layer having an average strain ε

    average and comprising a plurality of compressively strained layers, each compressively strained layer having a lattice constant a1 larger than as and a thickness t1, to which a strain ε

    1 (|ε

    1 |>

    0.001) that is equal to (a1 -as)/as is applied, and a plurality of tensively strained layers, each tensively strained layer having a lattice constant a2 smaller than as and a thickness t2, to which a strain ε

    2 (|ε

    2 |>

    0.001) that is equal to (a2 -as)/as is applied, said compressively strained layers and said tensively strained layers being alternatingly laminated on the substrate, wherein the average strain ε

    average of the stress compensation strained quantum well layer that is equal to (ε

    1 ·

    t1

    2 ·

    t2)/(t1 +t2) is in a range from +0.2% to +0.6%.

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