Method of fabricating a semiconductor device using element isolation by field shield

• US 5,672,526 A
• Filed: 03/12/1996
• Issued: 09/30/1997
• Est. Priority Date: 12/28/1993
• Status: Expired due to Term

• Current Assignee: United Microelectronics Corporation
• Original Assignee: Nippon Steel Corporation
• Inventors: Kawamura, Koichiro
• Primary Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US08/614,047
• Time in Patent Office: 567 Days
• Field of Search: 437/61, 437/41 R
• US Class Current: 438/294
• CPC Class Codes: H01L 29/402 Field plates
• CPC Class Codes: Y10S 257/913 with means to absorb or localize unwanted impurities or defects from semiconductors, e.g. heavy metal gettering

Abstract

A method of making a semiconductor device and includes a step of forming a field shield electrode of a thin film of at least one of polysilicon and amorphous silicon on an element-isolation region of a semiconductor substrate. An insulating film is interposed therebetween and having a thickness of less than 10 nm and not less than 5 nm. A further step includes applying heat treatment at a temperature not lower than 700° C. to the semiconductor substrate on which at least the field shield electrode is formed.

Claims

1. A method of making a semiconductor device comprising the steps of:

forming a field shield electrode of a thin film of at least one of polysilicon and amorphous silicon on a surface of an element-isolation region of a semiconductor substrate with a first insulating film interposed therebetween and having a thickness of no more than 10 nm nor less than 5 nm for defining an active region in said substrate surrounded by said field shield electrode;

forming a second insulating film on a surface of said active region at its area where a gate electrode of a transistor is to be formed, the thickness of said first insulating film being less than the thickness of said second insulating film; and

applying heat treatment at a temperature not lower than 700°

C. to said semiconductor substrate on which at least said field shield electrode is formed.

2. The method according to claim 1, further comprising the step of forming the gate electrode of said transistor on said second insulating film, and the step of forming impurity diffusion regions in the semiconductor substrate at regions disposed at opposite sides of said gate electrode of said transistor, wherein said heat treatment is carried out in the step of forming the impurity diffusion regions.

3. The method according to claim 1, further comprising the step of forming the gate electrode of said transistor on said first insulating film, wherein said heat treatment is carried out in the step of forming said second insulating film.