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Antifuse circuit using standard MOSFET devices

  • US 5,672,994 A
  • Filed: 12/21/1995
  • Issued: 09/30/1997
  • Est. Priority Date: 12/21/1995
  • Status: Expired due to Fees
First Claim
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1. A method for selectively programming a field-effect transistor (FET) having channel, source, and drain regions formed in a semi-conductor layer with a characteristic source-drain breakdown voltage and resistivity, comprising the steps of:

  • a) selecting the FET to be programmed; and

    b) applying a programming voltage to the drain region, the programming voltage being greater than or equal to the source-drain breakdown voltage of the transistor and the resistivity of the transistor is reduced to about ten kilo-ohms.

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