Method of heat-treating a glass substrate

• US 5,674,304 A
• Filed: 09/23/1994
• Issued: 10/07/1997
• Est. Priority Date: 10/12/1993
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Teramoto, Satoshi, Sakama, Mitsunori, Fukada, Takeshi
• Primary Examiner(s): Griffin, Steven P.
• Application Number:
  US08/311,275
• Time in Patent Office: 1,110 Days
• Field of Search: 65/32.4, 65/60.1, 65/60.4, 65/60.5, 65/111, 65/114, 65/117, 65/104, 65/60.2, 65/60.8, 427/585, 427/588, 427/584, 427/109, 427/126.2, 427/126.4, 427/165, 427/166, 427/374.1, 427/372.2, 427/379, 427/380, 427/383.5, 427/583, 427/108, 427/126.3, 427/167, 427/255, 427/374.3, 427/374.2, 437/243, 437/235, 437/248, 437/241, 437/238, 437/245
• US Class Current: 65/32.4
• CPC Class Codes: C03B 25/00 Annealing glass products
• CPC Class Codes: C03B 32/00 Thermal after-treatment of glass products not provided for in groups C03B19/00 , C03B25/00 - C03B31/00 or C03B37/00, e.g. crystallisation, eliminating gas inclusions or other impurities; Hot-pressing vitrified, non-porous, shaped glass products
• CPC Class Codes: C03C 17/001 General methods for coating; Devices therefor
• CPC Class Codes: C03C 17/22 with other inorganic material C03C17/34, C03C17/44 take precedence
• CPC Class Codes: C03C 17/225 Nitrides
• CPC Class Codes: C03C 17/3482 comprising silicon, hydrogenated silicon or a silicide
• CPC Class Codes: C03C 2217/281 Nitrides
• CPC Class Codes: C03C 2217/282 Carbides, silicides
• CPC Class Codes: C03C 2218/32 After-treatment
• CPC Class Codes: Y02P 40/57 Improving the yield, e-g- reduction of reject rates

Abstract

A method of heat-treating a glass substrate where the substrate is thermally treated (such as the formation of films, growth of films, and oxidation) around or above its strain point. After thermally treating the substrate around or above its strain point the glass substrate may be slowly cooled at a rate of 0.01° to 0.5° C./min to achieve maximum shrinkage of the substrate. Following further thermal treatments the substrate may be quickly cooled at a rate of 10° C./min to 300° C./sec to suppress shrinkage of the glass substrate. The substrate can have films such as aluminum nitrate films, silicon oxide films, silicon films, insulating films, semiconductor films, etc. Film formation can occur either before or after thermal treatment of the substrate around or above its strain point and before further thermal treatments.

Claims

1. A method for heat-treating a glass substrate having a strain point comprising the steps of:

forming a film comprising aluminum nitride on a surface of said glass substrate; and

heat-treating said glass substrate at a temperature lying within 50°

C. from the strain point of said glass substrate,

wherein said film contains oxygen at 0.001 to 10 atomic %.

2. A method of heat-treating a glass substrate having a strain point comprising the steps of:

forming a film comprising aluminum nitride on a surface of said glass substrate; and

heat-treating said glass substrate at a temperature lying within 50°

C. from the strain point of said glass substrate in an ambient atmosphere of nitrogen or a mixture of nitrogen and oxygen,

wherein said aluminum nitride contains 0.01 to 20 atomic % of oxygen.

3. The method of claim 2 further comprising the step of, after said step of heat-treating said glass substrate, cooling said glass substrate at a rate of 0.01°

to 0.5°

C./min.

4. The method of claim 2 wherein after said step of heat-treating said glass substrate, a second heat treatment step is carried out at a temperature lower than the temperature of said step of heat-treating said glass substrate, and wherein after the second heat treatment step, the substrate is rapidly cooled at a rate of 10°

C./min to 300°

C./sec.

5. A method of heat-treating a glass substrate comprising the steps of:

forming a film comprising aluminum nitride on a surface of said glass substrate; and

heat-treating said glass substrate in an ambient atmosphere selected from the group consisting of N₂, N₂ O, NH₃ and mixtures thereof and simultaneously annealing said film comprising aluminum nitride,

wherein said film contains oxygen at 0.001 to 10 atomic %.

6. The method of claim 5 further comprising a step of cooling said glass substrate in an ambient atmosphere containing N₂, N₂ O, or NH₃ after said heat-treating step.

7. A method of heat-treating a glass substrate comprising the steps of:

forming a film comprising aluminum nitride on a surface of said glass substrate;

first heat-treating said glass substrate in an ambient atmosphere selected from the group consisting of N₂, N₂ O, NH₃ and mixtures thereof;

slowly cooling said glass substrate after said first heat-treating step;

second heat-treating said glass substrate at a temperature lower than a temperature used in said first heat-treating step; and

rapidly cooling said glass substrate after said second heat-treating step.

8. The method of claim 7 wherein said slowly cooling step is carried out at a rate of 0.01°

to 0.5°

C./min.

9. The method of claim 7 wherein said rapidly cooling step is carried out at a rate of 10°

C./min to 300°

C./sec.

10. A method of heat-treating a glass substrate comprising the steps of:

forming a film comprising aluminum nitride on top and bottom surfaces of said glass substrate; and

heat-treating said glass substrate having said film formed thereon in an ambient atmosphere containing nitrogen,

wherein said aluminum nitride contains 0.01 to 20 atomic % of oxygen.

11. The method of claim 10 wherein said step of forming said film comprising aluminum nitride is carried out by a method selected from the group consisting of positive column plasma CVD, plasma CVD and thermal CVD.

12. The method of claim 10 wherein said substrate is heated to a temperature higher than a strain point of said glass substrate by said heat-treating step.

13. The method of claim 10 wherein said glass substrate is maintained substantially horizontally in said heat-treating step.

14. A method of heat-treating a glass substrate on which a semiconductor device is to be formed, said method comprising the steps of:

forming a film comprising aluminum nitride at least on a surface of said glass substrate on which said semiconductor device is to be formed;

heat-treating said glass substrate;

slowly cooling said glass substrate at a rate of 0.01°

to 0.5°

C./min in an ambient atmosphere containing nitrogen; and

then

forming said semiconductor device on said glass substrate,

wherein the step of heat-treating is carried out at a temperature higher than any process temperature at which said semiconductor device is formed on said glass substrate.

15. The method of claim 14 wherein said semiconductor device comprises a transistor.

16. A method of heat-treating a glass substrate having a strain point comprising the steps of:

heat-treating said glass substrate above said strain point;

slowly cooling said glass substrate after said heat-treating step;

forming a film comprising aluminum nitride at least on one surface of said glass substrate; and

heat-treating said glass substrate and said film in an ambient atmosphere containing nitrogen to anneal said film comprising aluminum nitride.

17. A method of heat-treating a glass substrate having a strain point comprising the steps of:

first heat-treating said glass substrate at a temperature higher than said strain point;

first cooling said glass substrate after said first heat-treating step at a rate of 0.01°

C./min. to 0.5°

C./min.;

second heat-treating said glass substrate after said first cooling step at a temperature lower than said strain point; and

second cooling said glass substrate after said second heat-treating step at a rate of 10°

C./min. to 300°

C./sec.,

wherein said method comprises a further step of forming a film on said glass substrate either before or after performing the step of said first heat-treating and before performing the step of said second heat-treating.

18. The method of claim 17 wherein said first heat-treating step is carried out in an ambient atmosphere containing N₂.

19. A method of heat-treating a glass substrate having a strain point comprising the steps of:

first heat-treating said glass substrate at a temperature higher than said strain point;

first cooling said glass substrate after said first heat-treating step at a rate of 0.01°

C./min to 0.5°

C./min.;

second heat-treating said glass substrate after said first cooling step at a temperature higher than said strain point; and

second cooling said glass substrate after said second heat-treating step at a rate of 10°

C./min. to 300°

C./sec,

wherein said first heat-treating step is carried out at a temperature higher than said second heat-treating step, and

wherein said method comprises a further step of forming a film on said glass substrate either before or after performing the step of said first heat-treating and before performing the step of said second heat-treating.

20. The method of claim 19 wherein said first heat-treating step is carried out in an ambient atmosphere containing N₂.

21. A method of heat-treating a glass substrate having a strain point comprising the steps of:

first heat-treating said glass substrate at a temperature higher than said strain point;

first cooling said glass substrate after said first heat-treating step at a rate of 0.01°

C./min. to 0.5°

C./min.;

second heat-treating said glass substrate after said first cooling step at a temperature higher than said strain point and lower than said temperature at which said first heat-treating is conducted; and

second cooling said glass substrate after said second heat-treating step at a rate of 2°

to 200°

C./sec.

wherein said method comprises a further step of forming a film on said glass substrate either before or after performing the step of said first heat-treating and before performing the step of said second heat-treating.

22. The method of claim 21 wherein said first heat-treating step is carried out in an ambient atmosphere containing N₂.

23. A method of heat-treating a glass substrate having a strain point comprising the steps of:

heat-treating said glass substrate at a temperature higher than said strain point;

first cooling said glass substrate after said heat-treating step at a rate of 0.01°

C./min. to 0.5°

C./min.;

forming an insulating film on said glass substrate;

forming a silicon film on said insulating film after said first cooling step;

crystallizing said silicon film formed on said insulating film; and

second cooling said silicon film formed on said insulating film after said crystallizing step at a rate of 10°

C./min. to 300°

C./sec.,

wherein said crystallizing step is carried out at a temperature lower than said heat-treating step.

24. The method of claim 23 wherein said first heat-treating step is carried out in an ambient atmosphere containing N₂.

25. The method of claim 23 wherein said insulating film comprises silicon oxide.