Process for forming deep trench DRAMs with sub-groundrule gates

• US 5,674,769 A
• Filed: 06/14/1996
• Issued: 10/07/1997
• Est. Priority Date: 06/14/1996
• Status: Expired due to Fees

• Current Assignee: Siemens AG
• Original Assignee: Siemens AG
• Inventors: Alsmeier, Johann, Dehm, Christine, Hammerl, Erwin, Stengl, Reinhard J.
• Primary Examiner(s): TSAI, H JEY
• Application Number:
  US08/665,183
• Time in Patent Office: 480 Days
• Field of Search: 437/52, 437/60, 437/919, 437/203
• US Class Current: 438/239
• CPC Class Codes: H10B 12/053 the transistor being at least partially in a trench in the substrate vertical transistor in combination with a capacitor formed in a substrate trench H10B12/0383
• CPC Class Codes: H10B 12/34 the transistor being at least partially in a trench in the substrate

Abstract

A method of fabricating sub-GR gates in a deep trench DRAM cell. The method comprises depositing, removing, and selectively etching a plurality of layers which include sacrificial spacers, liners, masking, and resist layers of both semiconducting and non-semiconducting materials on a semiconductor substrate according to specific process flows designed to circumvent the problems associated with prior art sub-GR processes. The method represents an improvement on standard gate conductor processes and provides a device which achieves an up to now unachieved decoupling of channel doping and junction doping.

Claims

1. A process for fabricating sub-GR gates in a semiconducting substrate of a dynamic random access memory array, said substrate having a deep trench, a shallow trench isolation, and nitride seal regions formed thereon;

comprising the steps of;

depositing a sacrificial spacer on said semiconductor substrate;

etching a recess in a selective portion of said sacrificial spacer;

filling said recess with insulating material to form a column-shaped structure having opposing sides;

removing the remaining portion of said sacrificial spacer;

etching a trench along each side of said column-shaped structure of insulating material; and

filling trenches with conductive material to form a pair of trench gates.

2. The process according to claim 1, wherein said step of depositing a sacrificial spacer on said semiconductor substrate comprises the steps of:

depositing a layer of oxide on said semiconductor substrate;

depositing a layer of nitride on said layer of oxide; and

depositing a layer of polysilicon on said layer of oxide.

3. The process according to claim 2, wherein said step of etching a recess in a selective portion of said sacrificial spacer comprises the steps of:

depositing a resist layer on said layer of polysilicon;

simultaneously etching said layer of polysilicon and said layer of nitride forming a trench therein, said trench extending to the surface of said layer of oxide;

removing said resist layer;

consecutively depositing a liner of oxide and a layer of nitride in said trench; and

selectively etching a recess in said nitride layer.

4. The process according to claim 1, further including the formation of surface straps after said step of forming a recess in a selective portion of said sacrificial spacer.

5. The process according to claim 4, wherein said step of forming surface straps includes the steps of:

depositing a surface strap masking layer on said substrate;

simultaneously selectively etching said nitride seals in said substrate and a recess into said layer of oxide; and

removing said surface strap mask.

6. The process according to claim 1, wherein said step of filling said recess with insulating material to form a column-shaped structure having opposite sides comprises:

depositing a layer of polysilicon in said recess;

depositing a layer of oxide on said layer of polysilicon; and

depositing a layer of polysilicon on said layer of oxide.

7. The process according to claim 3, wherein said step of removing the remaining portion of said sacrificial spacer includes the steps of:

depositing a masking layer on said semiconductor substrate;

selectively etching said oxide and said nitride layers initially deposited on said semiconductor substrate;

removing said masking layer; and

removing said nitride layer.

8. The process according to claim 1, wherein said step of etching a trench along each side of said column-shaped structure of insulating material includes the steps of:

etching trenches into said semiconductor substrate;

lining said trenches with oxide;

selectively etching said oxide liner around said nitride seals;

simultaneously removing said nitride layer, said oxide liner and portions of said oxide layer initially deposited on said substrate; and

depositing an oxide layer over the resulting structure.

9. The process according to claim 1, wherein said step of filling said trenches with conductive material to form a pair of trench gates includes the steps of:

depositing a gate oxide layer in said trenches;

depositing a polysilicon gate conductor layer on said gate oxide layer;

masking and selectively etching said polysilicon gate conductor layer in order to form gate conductors from said polysilicon gate conductor layer;

removing said masking layer;

depositing a nitride later on the resulting structure; and

selectively etching said nitride layer such that it remains disposed only on said gate conductors.

10. The process according to claim 1, further including the step of forming junctions in said semiconductor substrate.

11. The process according to claim 10, wherein said step of forming junctions in said semiconductor substrate includes the steps of:

depositing a nitride liner over said semiconductor substrate;

forming a middle of line dielectricum in said substrate; and

planarizing said middle of line dielectricum.

12. The process according to claim 1, further including the step of forming bit line contacts in said semiconductor substrate.

13. The process according to claim 12, wherein said step of forming bit line contacts in said semiconductor substrate includes the step of etching said semiconductor substrate with a selective oxide-to-nitride etching process.

14. The process according to claim 1, further including the step of forming contact to gate and contact to diffusion areas in said semiconductor substrate.

15. The process according to claim 1, further including the step of depositing a plurality of metal layers over said semiconductor substrate.

16. The process according to claim 15 wherein said step of depositing a plurality of metal layers is limited to the deposition of three metal layers.

17. The process according to claim 16, wherein the metals of said metal layers are selected from the group consisting of tungsten, tungsten silicide, titanium, titanium silicide and copper.

18. The process according to claim 1, further including a final pad opening process in said semiconductor substrate which completes the structure of said dynamic random access memory array.

19. The process according to claim 9, wherein said step of depositing a polysilicon gate conductor layer on said gate oxide layer further includes the deposition of a gate conductor in-situ-doped polysilicon layer containing a silicide/metal core.

20. The method according to claim 19, wherein said step of forming a gate conductor in-situ-doped polysilicon layer containing a metal/silicide core comprises the steps of:

depositing a layer of polysilicon on said layer of gate oxide in said trenches;

depositing a layer of gate conductor in-situ-doped polysilicon on said layer of polysilicon;

depositing a layer of metal silicide on said layer of polysilicon;

depositing a layer of metal on said layer of metal silicide;

simultaneously etching said layer of metal and said layer of metal silicide such that they reside below the surface of said substrate; and

depositing a layer of gate conductor in-situ-doped polysilicon on the resulting structure.

21. The method according to claim 20, wherein said metal silicide is selected from the group consisting of tungsten silicide and titanium silicide.

22. The method according to claim 20, wherein said metal is selected from the group consisting of tungsten, titanium and copper.

23. The method according to claim 20, wherein said metal silicide is tungsten silicide.

24. The method according to claim 20, wherein said metal is tungsten.