Capacitor and method of manufacturing the same
First Claim
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1. A method of manufacturing a capacitor, comprising the steps of:
- forming an interlevel dielectric film on a first metal interconnection layer;
removing said interlevel dielectric film at a position where said capacitor is to be formed;
forming a dielectric film for forming said capacitor by bias-ECR plasma CVD;
forming a through-hole; and
forming a second metal interconnection layer.
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Abstract
A structure of a capacitor includes a first metal interconnection layer, a dielectric film, and a second metal interconnection layer. The dielectric film is formed on the first metal interconnection layer. The second metal interconnection layer is formed on the dielectric film. The dielectric film is a dielectric film formed by bias-ECR plasma CVD.
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Citations
3 Claims
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1. A method of manufacturing a capacitor, comprising the steps of:
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forming an interlevel dielectric film on a first metal interconnection layer; removing said interlevel dielectric film at a position where said capacitor is to be formed; forming a dielectric film for forming said capacitor by bias-ECR plasma CVD; forming a through-hole; and forming a second metal interconnection layer. - View Dependent Claims (2)
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3. A method of manufacturing a capacitor, comprising the steps of:
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forming an interlevel dielectric film on a first metal interconnection layer; removing said interlevel dielectric film in a tapered shape at a position where said capacitor is to be formed; forming a dielectric film for forming said capacitor by bias-ECR plasma CVD; forming a through-hole; and forming a second metal interconnection layer.
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Specification