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Capacitor and method of manufacturing the same

  • US 5,674,771 A
  • Filed: 03/22/1993
  • Issued: 10/07/1997
  • Est. Priority Date: 04/20/1992
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing a capacitor, comprising the steps of:

  • forming an interlevel dielectric film on a first metal interconnection layer;

    removing said interlevel dielectric film at a position where said capacitor is to be formed;

    forming a dielectric film for forming said capacitor by bias-ECR plasma CVD;

    forming a through-hole; and

    forming a second metal interconnection layer.

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