Integrated insulated gate field effect transistors with thin insulation region between field insulation regions

• US 5,675,171 A
• Filed: 04/19/1996
• Issued: 10/07/1997
• Est. Priority Date: 04/20/1995
• Status: Expired due to Fees

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Kokubun, Tetsuya
• Primary Examiner(s): Munson, Gene M.
• Application Number:
  US08/634,814
• Time in Patent Office: 536 Days
• Field of Search: 257/394-400, 257/372, 257/921
• US Class Current: 257/400
• CPC Class Codes: H01L 21/76202 using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO H01L21/76235 takes precedence; together with vertical isolation, e.g. LOCOS in a SOI substrate, H01L21/76264
• CPC Class Codes: H01L 21/76218 introducing both types of electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers, e.g. for isolation of complementary doped regions

Abstract

Disclosed is a semiconductor device, which has: a first device-separating insulating film which is formed on a semiconductor substrate and extends in a first(Y) direction; a second device-separating insulting film which is formed on said semiconductor substrate and extends in a second(X) direction normal to the first(Y) direction; a first-conductivity-type device region which is formed on the semiconductor substrate and is sectioned by the first and second device-separating insulating films; and a first first-conductive-type high concentration impurity layer which is formed under the first device-separating insulating film and extends in the first(Y) direction; wherein the second device-separating insulating film is connected with the first device-separating insulating film through an insulating film thinner than both the first and second device-separating insulating films, the thin insulating film extending over the first high concentration impurity layer to separate the device region arranged in the second(X) direction from each other by the first device-separating insulating film and the first high concentration impurity layer, and the device region arranged in the first(Y) direction is separated by the second device-separating insulating film and the thin insulating film.

Claims

1. A semiconductor device, comprising:

a first device-separating insulating film which is formed on a semiconductor substrate and extends in a first direction;

a second device-separating insulating film which is formed on a semiconductor substrate and extends in a second direction normal to said first direction;

a first-conductivity-type device region which is formed on said semiconductor substrate and is sectioned by said first and second device-separating insulating films; and

a first first-conductive-type high concentration impurity layer which is formed under said first device-separating insulating film and extends in said first direction;

wherein said second device-separating insulating film is connected with said first device-separating insulating film through an insulating film thinner than both said first and second device-separating insulating films, said thin insulating film extending over said first high concentration impurity layer to separate said device region arranged in said second direction from each other by said first device-separating insulating film and said first high concentration impurity layer, and said device region arranged in said first direction is separated by said second device-separated insulating film and said thin insulating film.

2. A semiconductor device, according to claim 1, wherein:

said device region includes an insulated-gate field-effect transistor which comprises second conductivity-type source and drain regions and a gate electrode which extends in said second direction through a gate insulating film on a channel region between said source and drain regions, and a thickness of said thin insulating film is nearly equal to that of said gate insulating film.

3. A semiconductor device, according to claim 2, further comprising:

a second first-conductivity-type impurity layer which is formed under said thin insulating film and has an impurity concentration higher than said first-conductivity-type device region and lower than said first high concentration impurity layer under said first device-separating insulating film.

4. A semiconductor device, according to claim 3, wherein:

said second first-conductivity-type impurity layer continuously extends in said first direction along both ends in second direction of said source and drain regions under said thin insulating film.

5. A semiconductor device, according to claim 1, further comprising:

a second first-conductivity-type impurity layer which is formed under said thin insulating film and has an impurity concentration higher than said first-conductivity-type device region and lower than said first high concentration impurity layer under said first device-separating insulating film.

6. A semiconductor device, according to claim 5, wherein:

said second first-conductivity-type impurity layer continuously extends in said first direction along both ends in second direction of said source and drain regions under said thin insulating film.