Amorphic diamond film flat field emission cathode

• US 5,675,216 A
• Filed: 06/07/1995
• Issued: 10/07/1997
• Est. Priority Date: 03/16/1992
• Status: Expired due to Fees

• Current Assignee: SI Diamond Technology, Inc. (Nano Magic, Inc.)
• Original Assignee: Microelectronics and Computer Technology Corporation
• Inventors: Kumar, Nalin, Xie, Chenggang
• Primary Examiner(s): Mancuso, Joseph
• Assistant Examiner(s): Grant, II, Jerome
• Application Number:
  US08/482,687
• Time in Patent Office: 853 Days
• Field of Search: 313/495, 313/399, 313/403, 313/409, 313/411, 313/441, 313/491
• US Class Current: 313/495
• CPC Class Codes: H01J 1/304 Field-emissive cathodes
• CPC Class Codes: H01J 1/3042 microengineered, e.g. Spindt-type
• CPC Class Codes: H01J 2201/304 Field emission cathodes
• CPC Class Codes: H01J 2201/30426 Coatings on the emitter surface, e.g. with low work function materials
• CPC Class Codes: H01J 2201/30457 Diamond
• CPC Class Codes: H01J 2329/00 Electron emission display panels, e.g. field emission display panels
• CPC Class Codes: H01J 2329/8625 Spacing members
• CPC Class Codes: H01J 31/127 using large area or array sources, i.e. essentially a source for each pixel group
• CPC Class Codes: H01J 61/0677 characterised by the electron emissive material
• CPC Class Codes: H01J 63/00 Cathode-ray or electron-stream lamps
• CPC Class Codes: H01J 63/06 Lamps with luminescent screen excited by the ray or stream
• CPC Class Codes: H01J 9/027 of thin film cathodes

Abstract

A field emission cathode for use in flat panel displays is disclosed comprising a layer of conductive material and a layer of amorphic diamond film, functioning as a low effective work-function material, deposited over the conductive material to form emission sites. The emission sites each contain at least two sub-regions having differing electron affinities. Use of the cathode to form a computer screen is also disclosed along with the use of the cathode to form a fluorescent light source.

Claims

1. A method of operating a cathode, comprising the steps of:

causing an electrical current to flow through a layer of conducting material; and

directing said current through a layer of low work-function material deposited over said conductive material, said low effective work-function material having a relatively flat emission surface comprising a plurality of distributed localized electron emission sites, wherein said emission surface is greater than 20,106.19 square nanometers in area.

2. The method as recited in claim 1 wherein said emission sites at said emission surface are relatively flat.

3. The method as recited in claim 1 wherein said sites have at least two different electron affinities.

4. The method as recited in claim 1 wherein each said site is under one micron in diameter and greater than 160 nanometers in diameter.

5. A method of operating a cathode, according to claim 1 comprising the steps of:

causing an electrical current to flow through a layer of conducting material; and

directing said current through a layer of low work-function material deposited over said conductive material, said low effective work-function material having a relatively flat emission surface comprising a plurality of distributed localized electron emission sites, wherein said emission sites each have a plurality of different bonding structures.

6. The method as recited in claim 5 wherein at least one of said bonding structures is SP³.

7. The method as recited in claim 1 wherein said emission sites contain dopants of an element different from said low effective work-function material.

8. The method as recited in claim 1 wherein said emission sites each contain dopant atoms.

9. The method as recited in claim 8 wherein said dopant atoms are carbon.

10. A method of operating a cathode, according to claim 1 comprising the steps of:

causing an electrical current to flow through a layer of conductive material; and

directing said current through a layer of low work function material deposited over said conductive material, said low effective work function material having an emission surface comprising a plurality of distributed localized electron emission sites, wherein each said emission site contains boundaries between different crystalline structures.

11. The method as recited in claim 10 wherein said boundaries are points.

12. The method as recited in claim 10 wherein said boundaries are lines.

13. The method as recited in claim 10 wherein said boundaries are dislocations.

14. A method of operating a cathode, according to claim 1 comprising the steps of:

causing an electrical current to flow through a layer of conductive material; and

directing said current through a layer of low work-function material deposited over said conductive material, said low effective work-function material having an emission surface comprising a plurality of distributed localized electron emission sites, wherein said emission sites each have electrical properties which are discontinuous from each other.

15. A method of operating a cathode, comprising the steps of:

causing an electrical current to flow through a layer of conductive material; and

directing said current through a layer of low work function material deposited over said conductive material, said low effective work function material having an emission surface comprising a plurality of distributed localized electron emission sites, wherein some of said low effective work function material is amorphic diamond.

16. A method of operating a cathode, comprising the steps of:

causing an electrical current to flow through a layer of conductive material; and

directing said current through a layer of low work-function material deposited over said conductive material, said low effective work-function material having an emission surface comprising a plurality of distributed localized electron emission sites, wherein some of said low effective work-function material is amorphic diamond and said amorphic diamond is comprised of SP² and SP³ crystallites.