Solder ball connections and assembly process

• US 5,675,889 A
• Filed: 06/07/1995
• Issued: 10/14/1997
• Est. Priority Date: 10/28/1993
• Status: Expired due to Term

• Current Assignee: Invensas Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Banks, Donald Ray, Corbin, John Saunders Jr., Caulfield, Thomas, Watson, David P., Hoebener, Karl Grant, Acocella, John, Benenati, Joseph Angelo
• Primary Examiner(s): Arbes, Carl J.
• Application Number:
  US08/474,343
• Time in Patent Office: 860 Days
• Field of Search: 29/840, 437/183, 228/180.21, 228/180.22, 228/254
• US Class Current: 29/830
• CPC Class Codes: B23K 1/0008 specially adapted for particular articles or work
• CPC Class Codes: B23K 1/0016 Brazing of electronic components
• CPC Class Codes: B23K 2101/36 Electric or electronic devices
• CPC Class Codes: B23K 2101/40 Semiconductor devices
• CPC Class Codes: B23K 2101/42 Printed circuits
• CPC Class Codes: H01L 21/4853 Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins
• CPC Class Codes: H01L 2224/29099 Material
• CPC Class Codes: H01L 2224/81191 wherein the bump connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/814 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 23/488 consisting of soldered or bonded constructions bump connectors H01L24/01
• CPC Class Codes: H01L 23/49816 Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/49838 Geometry or layout
• CPC Class Codes: H01L 2924/00013 Fully indexed content
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H05K 1/114 Pad being close to via, but not surrounding the via
• CPC Class Codes: H05K 2201/0215 Metallic fillers
• CPC Class Codes: H05K 2201/10234 Metallic balls solder balls H05K2203/041
• CPC Class Codes: H05K 2201/10734 : Ball grid array [BGA]; Bump grid array
• CPC Class Codes: H05K 2201/10992 : Using different connection materials, e.g. different solders, for the same connection
• CPC Class Codes: H05K 2203/0195 : Tool for a process not provided for in H05K3/00, e.g. tool for handling objects using suction, for deforming objects, for applying local pressure
• CPC Class Codes: H05K 2203/0338 : Transferring metal or conductive material other than a circuit pattern, e.g. bump, solder, printed component affixing a prefabricated conductor pattern H05K3/20
• CPC Class Codes: H05K 2203/041 : Solder preforms in the shape of solder balls soldering leadless components having an array of bottom contacts H05K3/3436
• CPC Class Codes: H05K 2203/0415 : Small preforms other than balls, e.g. discs, cylinders or pillars
• CPC Class Codes: H05K 2203/0455 : PTH for surface mount device [SMD], e.g. wherein solder flows through the PTH during mounting
• CPC Class Codes: H05K 2203/082 : Suction, e.g. for holding solder balls or components
• CPC Class Codes: H05K 3/3436 : having an array of bottom contacts, e.g. pad grid array or ball grid array components
• CPC Class Codes: H05K 3/3452 : Solder masks
• CPC Class Codes: H05K 3/3478 : Applying solder preforms; Transferring prefabricated solder patterns
• CPC Class Codes: H05K 3/42 : Plated through-holes or plated via connections
• CPC Class Codes: H05K 3/429 : Plated through-holes specially for multilayer circuits, e.g. having connections to inner circuit layers
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10T 29/49126 : Assembling bases
• CPC Class Codes: Y10T 29/49144 : by metal fusion

Abstract

Two substrates are produced each with a planar, mirror-image matrix of metal contacts in a surface wiring layer. The substrates are positioned with the matrices in parallel confrontation which defines pairs of confronting contacts. A metal ball is positioned between each pair of contacts with a respective volume of joining material between the ball and each of the two respective contacts. The volumes of joining material are simultaneously melted to allow surface tension to align the substrates and to accurately center the balls between each respective pairs of contacts in a plane defines by the matrix of balls.

Claims

1. A process for producing an interconnect assembly, comprising the steps of:

producing a first substrate with an approximately planer pattern of multiple, metal contacts on a major surface;

depositing a volume of a first joining-material on each of the contacts of the first substrate;

connecting a conductive metal-ball to the first joining-material on each of the contacts on the first substrate to define a plane of metal-balls for maintaining a predetermined distance between the first substrate and a second substrate when connected;

producing a second substrate with a major surface having an approximately planer pattern of multiple, metal contacts which are approximately a mirror image of the pattern of contacts of the first substrate;

depositing a volume of a second joining-material for positioning between the metal-balls and each respective contact of the second substrate;

positioning the substrates together for interconnection with contact patterns parallel, with mirror image pairs of contacts in confronting approximate alignment, and with each volume of the second joining-material approximately in contact with a respective metal-ball and a respective contact of the second substrate;

simultaneously melting the first and second joining-materials while the substrates are positioned together, at a temperature in which the metal-balls remain solid for providing the predetermined separation between substrates, for moving the metal-balls by surface tension of the melted joining-material in directions within the plane of the metal-balls to positions approximately between the pairs of approximately aligned contacts; and

cooling the substrates below the melting temperatures of the joining-materials to form electrical interconnections between the pairs of contacts.

2. The process of claim 1, in which the step of connecting a metal-ball to the first volumes of joining-material includes the steps of:

positioning a metal-ball on each volume of first joining-material;

heating up the first substrate to connect the metal-balls to the contacts of the first substrate by melting the first joining-material without melting the metal-balls; and

cooling down the first substrate to form a mechanical joint between the metal-balls and the contacts of the first substrate before the step of positioning the substrates together for interconnection.

3. The process of claim 1, in which the step of connecting a metal-ball to the first volumes of joining-material includes the steps of:

positioning a metal-ball on each volume of first joining-material;

heating up the first substrate to connect the metal-balls to the contacts of the first substrate without metal changing the shape of the balls; and

cooling down the first substrate to form a mechanical joint between the metal-balls and the contacts of the first substrate before the step of positioning the substrates together for interconnection.

4. The process of claim 3, in which there is a metal element which can migrate between the metal-balls and the first joining-material and such migration increase the melting temperature of the first joining-material and during the step of heating up the first substrate the substrate is heated to a minimum temperature and for a minimum time for minimizing migration of a metal element between the metal-balls and first joining-material to minimize the increase of the melting temperature of the first joining-material.

5. The process of claim 4, further comprising the step, selecting a different joining-material for the first and second joining-materials for compensating for migration of the metal element between the metal-balls and first joining-material in order for the first and second joining-materials to be melted simultaneously during the step of heating up the substrates while positioned together.

6. A process for forming an interconnect assembly, comprising the steps of:

producing a first substrate having on a major surface, a wiring layer including an array of multiple, metal contacts;

producing a second substrate having on a major surface, a wiring layer including an array of multiple, metal contacts which are arranged approximately mirror image to the contacts of the first substrate and are about the same size as the contacts of the first substrate;

positioning the substrates with the mirror image arrays of contacts in confrontation to define confronting pairs of contacts;

positioning conductive metal-balls between the pairs of confronting contacts; and

connecting joining-material between the metal-balls and each of the respective pair of contacts to electrically and mechanically interconnect the pairs of contacts through the balls.

7. A process for building an interconnect assembly, comprising the steps of:

producing a first substrate having on a major surface, a wiring layer including an array of multiple, metal contacts;

producing a second substrate having on a major surface, a wiring layer including an array of multiple, metal contacts which are arranged approximately mirror image to the contacts of the first substrate and are larger in size than the contacts of the first substrate;

positioning the substrates with the mirror image arrays of contacts in confrontation to define confronting pairs of contacts;

positioning conductive metal-balls between the pairs of confronting contacts;

connecting a volume of joining-material between the metal-balls and the respective contact of the first substrate; and

connecting a smaller volume of joining-material between the metal-balls and the respective contact of the second substrate to interconnect the pairs of contacts electrically and mechanically.

8. A process for producing an interconnect structure, comprising the steps of:

producing a rigid substrate with an approximately planer matrix of multiple, metal contacts on a major surface;

depositing a volume of a joining-material on each of the contacts of the matrix of the rigid substrate;

positioning a conductive metal-ball on the joining-material on each of the contacts on the first substrate to define a plane of metal-balls for maintaining a predetermined distance between the substrate and a second substrate to which the substrate is to be connected;

melting the volumes of joining-material without melting the metal-balls to prevent changing the shape of the balls; and

cooling the joining-material to form a solid mechanical joint between the metal-balls and the contacts of the first substrate.

9. A process for fabricating an interconnect structure, comprising the steps of:

producing a circuit board;

drilling one or more holes through the board;

plating the interior of the through-holes with conductive metal;

forming lands of conductive metal around the holes on a major surface of the board;

forming a rectangular array or grid of multiple, circular, conductive, metal contacts which are larger than the lands and positioned so that four contacts define a square that surrounds each of the lands; and

forming a conductor extending in a diagonal direction in relation to the square to one of the contacts between each respective land and one of the surrounding contacts.

10. The process of claim 9, further comprising the step of depositing joining-material on the contacts.

11. The process of claim 10, further comprising the step of connecting to the joining-material, a metal-ball with a melting temperature substantially above the melting temperature of the joining-material.

12. The process of claim 11, further comprising the step of heating, to melt the joining-material to reflow connect the balls onto the contacts and then cooling the joining-material to solidify it.

13. A process for making an interconnect assembly, comprising the steps of:

producing a circuit board with a multitude of wiring layers;

forming circular copper lands in a wiring layer on a major surface of the board;

making holes in the lands and extending through the board;

selectively depositing copper after drilling to plate the through-holes for connecting the lands to other wiring layers;

forming a rectangular array or grid of round copper contacts larger than the lands, about 0.7 mm in diameter and spaced at about 1.25 mm centers on the major surface and arranged so that four contacts define a square that surrounds each of the lands;

forming a conductor which is narrower than the contacts and narrower than the lands and which extends between each of the lands surrounded by contacts in a diagonal direction in relation to the square of surrounding contacts;

depositing solder resist at least partially covering the conductor and the lands and extending between the contacts to prevent solder bridging;

depositing a joining solder material containing about 37/63% Pb/Sn solder alloy on each of the contacts in the array on the board;

producing multiple green sheets of glass/ceramic particles and an organic binder;

forming via holes through the sheets;

screen printing conductive material into the holes and onto one of the surfaces of the sheets to form a conductive pattern;

stacking the sheets together;

sintering the stack of sheets in an oven to form a multi-layer ceramic chip carrier with an array of copper contacts on a major surface which are about 4.7 mm wide, are spaced about 1.25 mm apart, and are arranged approximately mirror image to the array of contacts of the board;

forming an array of round contacts on exterior major surface of the carrier;

depositing solder resist between the contacts to prevent solder bridging;

depositing a joining solder material containing about 37/63% Pb/Sn solder alloy on each of the contacts in the array on the carrier;

positioning a ball of about 90/10% Pb/Sn solder alloy and about 0.9 mm diameter in contact with the joining solder on each respective contact in the array of the carrier to define a plane of solder-balls;

reflowing to melt the joining solder material deposited on the contacts of the carrier without melting the solder-balls in order to solder the balls to the contacts of the carrier and using the minimal temperature and time required to form reliable mechanical joints in order to minimize diffusion of Pb from the balls into the melted solder;

cooling the carrier to solidify the joining solder;

positioning the ceramic carrier parallel to the circuit board with the solder-balls about in contact with the joining solder deposited on the array of contacts on the board so that each solder-ball is between a pair of contacts;

heating the substrates while positioned together to a temperature at which the solder deposited on the contacts of both the carrier and board are simultaneously melted and the solder-balls remain solid for moving the solder-balls by surface tension of the melted solder in directions within the plane of the solder-balls to positions about midway between the centers of the pairs of contacts to produce symmetric connections between the substrates; and

cooling the substrates below the melting temperature of the solder materials to solidify the solder material.

14. The process of claim 13, in which:

each of the contacts on the board include a very thin extension over the solder resist;

the solder is deposited on the contacts of the board including the extensions, by wave soldering;

the holes are formed in the board by drilling and formed in the sheets by punching; and

the process further comprises the steps of;

reflowing the deposited joining solder on the carrier before positioning the solder-balls;

flattening the joining solder on the carrier before positioning the solder-balls on the carrier;

depositing sticky flux on the flattened joining solder on the carrier before positioning the solder-balls on the carrier;

reflowing the deposited solder on the board before positioning the carrier with the board;

flattening the joining solder on the board before positioning the carrier with the board; and

applying flux to flattened joining solder on the board for joining the balls to the board before positioning the carrier with the board.

15. A process for producing an information handling system, comprising:

providing one or more central processing units connected in a network;

providing random access memory communicating through a bus with each central processor unit;

providing input/output means for communication between the bus and computer peripherals;

producing a multi-layer circuit board, having a wiring layer on the surface of the circuit board;

producing a multitude of metal contacts in a planer matrix pattern at positions defined by intersections of a grid of a multitude of approximately parallel about equally spaced lines in each of two about perpendicular directions in a plane of the surface wiring layer; and

forming a multitude of conducting vias connecting between one or more other wiring layers of the circuit board and the surface wiring layer at about the centers of squares defined by four of the contacts;

forming a conductor of the surface wiring layer for each respective via, which is narrower than the contacts, and extends in a diagonal direction of the square to connect between the via and one of the four contacts surrounding the via;

providing a chip carrier for one or more chips with a planer pattern of multiple, metal contacts on a major surface which is approximately a mirror image of a planer pattern of contacts on the circuit board to provide confronting pairs of contacts for interconnection between the carrier and the board;

providing a metal-ball for each respective pair of such contacts;

dispensing a volume of a first joining-material for each pair of contacts connected to a respective contact of the chip carrier and a volume of a second joining-material for each pair of contacts connected to a respective contact of the circuit board, with melting temperatures of both the first and second joining-material substantially less than the melting temperature of the metal-balls, with the first and second joining-materials of each pair of contacts soldered to diametrically opposite ends of the respective metal-ball; and

connecting the multi-layer circuit board in communication with the central processing units.

16. A process for producing interconnect assemblies comprising the steps of:

producing a first substrate with an approximately planer pattern of multiple, metal contacts on a major surface;

depositing a volume of a first joining-material on each of the contacts of the first substrate;

connecting a conductive metal-column to the first joining-material on each of the contacts on the first substrate for maintaining a predetermined distance between the first substrate and a second substrate when connected;

producing a second substrate with a major surface having an approximately planer pattern of multiple, metal contacts which are approximately a mirror image of the pattern of contacts of the first substrate;

depositing a volume of a second joining-material for positioning between the metal-columns and each respective contact of the second substrate;

positioning the substrates together for interconnection with contact patterns parallel, with mirror image pairs of contacts in confronting approximate alignment, and with each volume of the second joining-material approximately in contact with a respective end of the metal-column and a respective contact of the second substrate;

simultaneously melting the first and second joining-materials while the substrates are positioned together, at a temperature in which the metal-columns remain solid for providing the predetermined separation between substrates, for moving the ends of the metal-columns by surface tension of the melted joining-material to positions approximately at centers of the contacts; and

cooling the substrates below the melting temperatures of the joining-materials to form electrical interconnections between the pairs of contacts.

17. The process of claim 16, in which the step of connecting a metal-column to the first volumes of joining-material includes the steps of:

positioning a metal-column on each volume of first joining-material;

heating up the first substrate to connect the metal-columns to the contacts of the first substrate by melting the first joining-material without melting the metal-columns; and

cooling down the first substrate to form a mechanical joint between the metal-columns and the contacts of the first substrate before the step of positioning the substrates together for interconnection.

18. The process of claim 17, in which there is a metal element which can migrate between the metal-columns and the first joining-material and increase the melting temperature of the first joining-material and during the step of heating up the first substrate the substrate is heated to a minimum temperature and for a minimum time for minimizing migration of a metal elements between the metal-columns and first joining-material to minimize the increase of the melting temperature of the first joining-material.

19. The process of claim 18, further comprising the step, selecting a different joining-material for the first and second joining-materials for compensating for migration of the metal element between the metal-columns and first joining-material in order for the first and second joining-materials to be melted simultaneously during the step of heating up the substrates while positioned together.

20. A process for producing interconnect structures comprising the steps of:

producing a rigid substrate with an approximately planer matrix of multiple, metal contacts on a major surface;

depositing a volume of a joining-material on each of the contacts of the matrix of the rigid substrate;

positioning a conductive metal-column to the joining-material on each of the contacts on the first substrate for maintaining a predetermined distance between the substrate and a second substrate to which the substrate is to be connected;

melting the volumes of joining-material without melting the metal-columns to prevent changing the shape of the columns; and

cooling the joining-material to form a solid mechanical joint between the metal-columns and the contacts of the substrate.