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Photodetectors using III-V nitrides

  • US 5,677,538 A
  • Filed: 07/07/1995
  • Issued: 10/14/1997
  • Est. Priority Date: 07/07/1995
  • Status: Expired due to Fees
First Claim
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1. A detector comprising at least one single crystal III-V nitride film deposited by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy, wherein the (μ

  • τ

    ) product of the detector is controlled by varying parameters of the deposition process for the single crystal film.

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