Photodetectors using III-V nitrides

• US 5,677,538 A
• Filed: 07/07/1995
• Issued: 10/14/1997
• Est. Priority Date: 07/07/1995
• Status: Expired due to Fees

• Current Assignee: Trustees of Boston University
• Original Assignee: Trustees of Boston University
• Inventors: Misra, Mira, Moustakas, Theodore D.
• Primary Examiner(s): Tokar, Micheal J.
• Assistant Examiner(s): Tyler, Virgil O.
• Application Number:
  US08/499,710
• Time in Patent Office: 830 Days
• Field of Search: 250/370.01, 250/370.12, 250/320.02, 250/372, 250/371
• US Class Current: 250/370.12
• CPC Class Codes: H01L 31/0304 including, apart from doping materials or other impurities, only AIIIBV compounds
• CPC Class Codes: H01L 31/184 the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
• CPC Class Codes: H01L 31/1852 comprising a growth substrate not being an AIIIBV compound
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials

Abstract

A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.

Claims

1. A detector comprising at least one single crystal III-V nitride film deposited by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy, wherein the (μ

τ

) product of the detector is controlled by varying parameters of the deposition process for the single crystal film.

2. The detector of claim 1 being a UV detector.

3. The detector of claim 1 being an x-ray detector.

4. The detector of claim 1 being an alpha particle detector.

5. The detector of claim 1 being a visible light detector.

6. A photodetector comprising:

a III-V nitride film having a predetermined (μ

τ

) product;

a first electrode deposited on a surface of the film;

a second electrode deposited on the surface of the film, the second electrode being spaced from the first electrode; and

,

a voltage source connected across the first and second electrodes, said voltage source creating an electric field within the film;

wherein when the surface of the film upon which the electrodes are deposited is subjected to a photon illumination, electron hole pairs are created and flow within the film because of the electric field.

7. The photodetector of claim 6 wherein the III-V nitride film comprises a single crystal film.

8. The photodetector of claim 6 wherein the III-V nitride film comprises a buffer layer deposited on a sapphire substrate and a single crystal film deposited on the buffer layer whereby the predetermined (μ

τ

) product of the photodetector is controlled by varying parameters of the deposition process.

9. The photodetector of claim 6 wherein the III-V nitride film is deposited by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy.

10. The photodetector of claim 6 wherein the III-V nitride film is deposited by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy;

and,

wherein the resistivity of the film is controlled by varying the microwave power used in the electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy process.

11. The photodetector of claim 6 wherein the III-V nitride film is deposited by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy;

and,

wherein the resistivity of the film is controlled by varying the nitrogen flow used in the electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy process.

12. The photodetector of claim 6 wherein the first and second electrodes are deposited so as to form ohmic contacts on the surface of the film.

13. The photodetector of claim 6 wherein the III-V nitride film is fabricated from GaN.

14. The photodetector of claim 6 wherein the III-V nitride film is fabricated from an alloy of GaN and AlN.

15. The detector of claim 6 wherein the first and second electrodes are interdigitated.

16. The photodetector of claim 6 wherein the III-V nitride film is fabricated from an alloy of GaN and InN.

17. A method of making a photodetector having predetermined (μ

τ

) product;

fabricating a III-V nitride film so as to control its resistivity;

depositing a first electrode on a surface of the film;

depositing a second electrode on the surface of the film, the second electrode being spaced from the first electrode; and

,

providing a voltage source connected across the first and second electrodes.

18. The method of claim 17 wherein the step of fabricating further comprises fabricating a single crystal film.

19. The method of claim 18 wherein the step of fabricating further comprises separating the single crystal III-V nitride film from the dissolvable layer.

20. The method of claim 17 wherein the step of fabricating further comprises fabricating a dissolvable layer on a substrate and fabricating a single crystal III-V nitride film on the dissolvable layer.

21. The method of claim 17 wherein the step of fabricating further comprises fabricating a buffer layer on a substrate and fabricating a single crystal film upon the buffer layer.

22. The method of claim 17 wherein the step of fabricating comprises electron cyclotron resonance plasma-assisted molecular beam epitaxy.

23. The method of claim 17 wherein the predetermined (μ

τ

) product is controlled by varying parameters of the fabricating step.

24. The method of claim 22 wherein the predetermined (μ

τ

) product of the photodetector is controlled by varying the microwave power used in the electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy process.

25. The method of claim 22 wherein the predetermined (μ

τ

) product of the photodetector is controlled by varying the nitrogen flow used in the electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy process.

26. The method of claim 17 wherein the first and second electrodes are deposited so as to form ohmic contacts.

27. The method of claim 17 wherein the step of fabricating further comprises fabricating the III-V nitride film from GaN.

28. The method of claim 17 wherein the step of fabricating further comprises fabricating the III-V nitride film from an alloy of GaN and AlN.

29. The method of claim 17 wherein the step of fabricating further comprises fabricating the III-V nitride film from an alloy of GaN and InN.

30. The method of claim 17 wherein the steps of depositing first and second electrodes further comprises:

depositing a first electrode on the surface of the film, said first electrode having fingers;

depositing a second electrode on the surface of the film, said second electrode having fingers, said fingers of said second electrode being interdigitated with said fingers of said first electrode.