Frequency-variable oscillator controlled high efficiency charge pump

• US 5,677,649 A
• Filed: 08/17/1994
• Issued: 10/14/1997
• Est. Priority Date: 08/17/1994
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Martin, Chris G.
• Primary Examiner(s): Grimm, Siegfried H.
• Application Number:
  US08/291,975
• Time in Patent Office: 1,154 Days
• Field of Search: 331/57, 331/179, 331/75, 365/203, 365/189.09, 327/536
• US Class Current: 331/57
• CPC Class Codes: G11C 11/4074 Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
• CPC Class Codes: G11C 5/145 Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor G11C5/141 takes precedence
• CPC Class Codes: H02M 3/073 Charge pumps of the Schenkel-type
• CPC Class Codes: H03K 3/0315 Ring oscillators

Abstract

An integrated circuit semiconductor device includes a charge pump to provide current at a potential which is greater than a supply potential. The charge pump utilizes an oscillator, which causes the charge pump to cycle, and thereby provide a continuous output at an elevated potential. In order to optimize efficiency of the charge pump, the oscillator is able to change its frequency in response to output potential. In the preferred embodiments, this is accomplished by selectively inserting a supplemental portion into a ring oscillator loop. When used with an integrated circuit device, such as a DRAM, the current from the charge pump may be supplied to nodes on isolation devices and nodes on word lines, thereby improving the performance of the DRAM without substantially changing the circuit configuration of the DRAM array.

Claims

1. In a semiconductor circuit device having at least one signal line which is prechargeable to at least one operating level, a signal level voltage source for providing current at a signal level potential, a circuit connected to the signal line for accepting an elevated potential above a potential of the signal level voltage source, and a precharge circuit for precharging the signal line, the precharge circuit comprising:

a) an oscillator for receiving current from the signal level voltage source and providing an oscillating output having an oscillation frequency;

b) a capacitor connected between the oscillator and an intermediate output node;

c) at least one switching circuit connected in parallel with the capacitor between the oscillator and the intermediate output node for providing a charge pump output in response to the oscillating output, the charge pump output being provided at said elevated potential, the oscillator being responsive to an operating condition of the semiconductor circuit device to change the oscillation frequency of the oscillator, thereby effecting a change in the charge pump output of the switching circuit.

2. The device of claim 1, wherein the oscillator comprises:

a) a primary loop having a first plurality of inverters;

b) a secondary loop portion having an additional second plurality of inverters; and

c) a circuit, coupled to said primary loop and said secondary loop portion and responsive to the charge pump output, for selectively causing only said primary loop to respond to feedback signals from the primary loop when the charge pump output is below a predetermined level, and for selectively causing both said primary loop and secondary loop portion to respond to feedback signals from the primary loop when the charge pump output is above the predetermined level, thereby changing the oscillation frequency output by the oscillator in response to the charge pump output.

3. The device of claim 2, wherein:

said oscillator operates at a first higher frequency when said primary loop is responsive to feedback signals from said primary loop only and otherwise operates at a second lower frequency when operating, and wherein

said circuit further includes a bypass circuit for permitting signals corresponding to output signals from the primary loop only to be fed back to the primary loop when the charge pump output is below the predetermined level and for opening said bypass circuit to provide signals from said secondary loop portion to the primary loop when the charge pump output is above the predetermined level.

4. The semiconductor device as described in claim 1, further comprising:

a) a second switching circuit including an output transistor having a source and drain connected in series with the capacitor between the intermediate output node and an output node; and

b) a third switching circuit for controlling the second switching circuit by gating the output transistor.

5. The semiconductor device as described in claim 4, further comprising:

a second capacitor connected in parallel with the third switching circuit.

6. The semiconductor device as described in claim 5, further comprising:

a potential maintenance transistor connected to conduct from the signal level voltage source at times when potential at the output node falls below a predetermined potential with respect to the potential of the output node, and to present an open circuit when potential at the output node is greater than the potential of the signal level voltage source.

7. The semiconductor device as described in claim 5, further comprising:

a potential maintenance transistor having a source and drain connected in series between the signal level voltage source and the output node, the potential maintenance transistor being connected with its gate to the signal level voltage source.

8. The semiconductor device as described in claim 4, further comprising:

a) means to maintain the output node at a predetermined minimum potential by conducting current from the signal level voltage source; and

b) a potential limiting circuit responsive to potential at the output node, for attenuating the output of the precharge circuit to limit the potential at the output node.

9. The semiconductor device as described in claim 4, further comprising:

a decoupling capacitor connected to the output node for providing a storage capacity sufficient to maintain said elevated potential at a potential above the signal level potential during a substantial portion of an operating cycle of the semiconductor circuit device.

10. In a semiconductor circuit device having at least one signal line which is prechargeable to at least one operating level, a signal level voltage source for providing current at a signal level potential, a circuit connected to the signal line for accepting an elevated potential above a potential of the signal level voltage source, and a precharge circuit for precharging the signal line, the precharge circuit comprising:

a) an oscillator for receiving current from the signal level voltage source and providing an oscillating output having an oscillation frequency;

b) a first capacitor connected between the oscillator and an intermediate output node;

c) a first switching circuit connected in parallel with the capacitor between the oscillator and the intermediate output node for providing a charge pump output in response to the oscillating output, the charge pump output being provided at said elevated potential, the oscillator being responsive to an operating condition of the semiconductor circuit device to change said oscillation frequency of the oscillator, thereby, effecting a change in the charge pump output of the switching circuit;

d) a second switching circuit including an output transistor having a source and drain connected in series between the intermediate output node and an output node;

e) a third switching circuit for controlling the second switching circuit by gating the output transistor;

f) a second capacitor connected in parallel with the third switching circuit;

g) means to maintain the output node at a predetermined minimum potential by conducting current from the signal level voltage source; and

h) a potential limiting circuit responsive to potential at the output node for attenuating the output of the precharge circuit to limit the potential at the output node.

11. In a semiconductor circuit device having at least one signal line prechargeable to operating levels, a signal level voltage source providing current at a signal level potential, a circuit connected to the signal line which accepts an elevated potential above a potential of the signal level voltage source, and a precharge circuit which precharges the signal line, the precharge circuit comprising:

a) an oscillator for receiving current from the signal level voltage source and for providing an oscillating output having an oscillation frequency, the oscillation frequency being variable in response to the voltage level of an input signal to the precharge circuit;

b) a capacitor connected between the oscillator and a first node;

c) an output switching circuit connected in series with said capacitor, between said

capacitor and an output node; and

d) a first clamp circuit connected in parallel with said capacitor and providing a timed output in response to the oscillating output.

12. The semiconductor device as described in claim 11, wherein:

the output switching circuit includes an output transistor having a source and drain connected in series between the first node and the output node and wherein the device further comprises a second clamp circuit for controlling the output switching circuit in a timed sequence with respect to said timed output, the second clamp circuit controlling the output switching circuit by gating the output transistor.

13. The semiconductor device as described in claim 12, further comprising:

a second capacitor connected in parallel with the second clamp circuit.