Method of making a field emitter

• US 5,679,043 A
• Filed: 06/01/1995
• Issued: 10/21/1997
• Est. Priority Date: 03/16/1992
• Status: Expired due to Term

• Current Assignee: Applied Nanotech Holdings Incorporated (Nano Magic, Inc.)
• Original Assignee: Microelectronics and Computer Technology Corporation, SI Diamond Technology, Inc. (Nano Magic, Inc.)
• Inventors: Kumar, Nalin
• Primary Examiner(s): Bradley, P. Austin
• Assistant Examiner(s): Knapp, Jeffrey T.
• Application Number:
  US08/457,962
• Time in Patent Office: 873 Days
• Field of Search: 445/51, 445/24
• US Class Current: 445/24
• CPC Class Codes: H01J 1/304 Field-emissive cathodes
• CPC Class Codes: H01J 1/316 having an electric field parallel to the surface, e.g. thin film cathodes
• CPC Class Codes: H01J 2201/30426 Coatings on the emitter surface, e.g. with low work function materials
• CPC Class Codes: H01J 2201/30457 Diamond
• CPC Class Codes: H01J 2329/00 Electron emission display panels, e.g. field emission display panels
• CPC Class Codes: H01J 61/0677 characterised by the electron emissive material
• CPC Class Codes: H01J 63/06 Lamps with luminescent screen excited by the ray or stream
• CPC Class Codes: H01J 9/027 of thin film cathodes

Abstract

A matrix addressable flat panel display includes a flat cathode operable for emitting electrons to an anode when an electric field is produced across the surface of the flat cathode by two electrodes placed on each side of the flat cathode. The flat cathode may consist of a cermet or amorphic diamond or some other combination of a conducting material and an insulating material such as a low effective work function material. The electric field produced causes electrons to hop on the surface of the cathode at the conducting-insulating interfaces. An electric field produced between the anode and the cathode causes these electrons to bombard a phosphor layer on the anode.

Claims

1. A method of making a field emitter device, comprising the steps of:

providing a substrate;

depositing a layer of a low effective work function material on said substrate;

depositing a first layer of a conductive material in a first location near said layer of said low effective work function material; and

depositing a second separate layer of said conductive material in a second location near said layer of said low effective work function material, said first and second locations positioned relative to each other and to said layer of said low effective work function material so that said first and second layers of said conductive material are operable to produce an electric field across a surface of said layer of said low effective work function material when a voltage potential is applied between said first and second layers of said conductive material.

2. The method as recited in claim 1, wherein said low effective work function material is non-homogenous.

3. The method as recited in claim 1, wherein said low effective work function material is a cermet.

4. The method as recited in claim 1, wherein said low effective work function material is amorphic diamond.

5. The method as recited in claim 1, wherein said low effective work function material is CVD diamond film.

6. The method as recited in claim 1, wherein said layer of said low effective work function material is a thin film between 100 and 10,000 angstroms thick.

7. The method as recited in claim 1, wherein said first and second locations are each adjacent to said layer of said low effective work function material on opposite sides of said layer of said low effective work function material.

8. The method as recited in claim 1, wherein said conductive material is chromium.

9. The method as recited in claim 1, wherein said conductive material is titanium.

10. The method as recited in claim 1, wherein said layer of said low effective work function material has a substantially flat upper surface.

11. The method as recited in claim 10, wherein said substantially flat upper surface is substantially parallel to an upper surface of said substrate.

12. A method of making a display device comprising the steps of:

depositing a patch of a low effective work function material on a substrate;

depositing on said substrate a first contact of conductive material adjoining a first side of said patch of said low effective work function material; and

depositing on said substrate a second contact of conductive material adjoining a second side of said patch of said low effective work function material.

13. The method as recited in claim 12, further comprising the steps of:

positioning an anode substrate a distance away from said substrate supporting said low effective work function material;

depositing a conductive material on said anode substrate; and

depositing a luminescent material on said conductive material deposited on said anode substrate.

14. The method as recited in claim 12, wherein said layer of said low effective work function material has a substantially flat upper surface.

15. The method as recited in claim 14, wherein said substantially flat upper surface is substantially parallel to an upper surface of said substrate.

16. The method as recited in claim 12, wherein said first and second contacts of conductive material are formed so that they are operable for producing an electric field across a surface of said low effective work function material when a voltage potential is applied between said first and second contacts of conductive material.

17. The method as recited in claim 16, wherein said steps of depositing on said substrate said first and second contacts of conductive material are performed during the same deposition process.

18. The method as recited in claim 16, wherein said steps of depositing on said substrate said first and second contacts of conductive material are performed before said step of depositing said patch of said low effective work function material on said substrate.

19. The method as recited in claim 12, wherein said low effective work function material is non-homogenous, having at least one conducting-insulating interface.

20. The method as recited in claim 19, wherein said low effective work function material is a cermet.

21. The method as recited in claim 19, wherein said low effective work function material is amorphic diamond.

22. The method as recited in claim 19, wherein said low effective work function material is CVD diamond film.

23. The method as recited in claim 19, whereto said layer of said low effective work function material is a thin film between 100 and 10,000 angstroms thick.