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FET with gate spacer

  • US 5,679,589 A
  • Filed: 04/03/1992
  • Issued: 10/21/1997
  • Est. Priority Date: 10/17/1989
  • Status: Expired due to Term
First Claim
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1. A method of semiconductor integrated circuit fabrication comprising:

  • forming a gate stack over a substrate, said gate having a first overlying nitride layer;

    forming a first oxide layer upon said gate stack and selected portions of said substrate;

    depositing a second layer of nitride upon said first oxide layer;

    depositing a second oxide layer upon said second nitride layer;

    etching said second oxide layer to form a first spacer;

    etching said second nitride layer to form a second spacer underlying said first spacer;

    said first nitride layer remaining upon said gate stack.

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