Dynamic quantity sensor and method for producing the same, distortion resistance element and method for producing the same, and angular velocity sensor

• US 5,679,888 A
• Filed: 10/03/1995
• Issued: 10/21/1997
• Est. Priority Date: 10/05/1994
• Status: Expired due to Fees

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Kado, Hiroyuki, Manabe, Yoshio, Yoshida, Masaru, Tohda, Takao, Tanahashi, Ichiro
• Primary Examiner(s): NOLAND, THOMAS
• Application Number:
  US08/538,577
• Time in Patent Office: 749 Days
• Field of Search: 73/105, 250/306, 250/307
• US Class Current: 73/105
• CPC Class Codes: B82Y 35/00 Methods or apparatus for measurement or analysis of nanostructures
• CPC Class Codes: G01B 7/18 using change in resistance
• CPC Class Codes: G01C 19/56 Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
• CPC Class Codes: G01K 7/226 using microstructures, e.g. silicon spreading resistance
• CPC Class Codes: G01L 1/20 by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids of piezo-resistive materials G01L1/18; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/0894 by non-contact electron transfer, i.e. electron tunneling
• CPC Class Codes: G01P 15/12 by alteration of electrical resistance G01P15/0897, G01P15/105 take precedence
• CPC Class Codes: G01P 2015/0828 the mass being of the paddle type being suspended at one of its longitudinal ends
• CPC Class Codes: G01Q 20/04 Self-detecting probes, i.e. wherein the probe itself generates a signal representative of its position, e.g. piezoelectric gauge

Abstract

The dynamic quantity sensor includes an electrically insulating substance layer and at least one pair of electrodes contacting the electrically insulating substance layer, wherein a plurality of conductive particles are dispersed in the electrically insulating substance layer so that a tunnel current flows when a voltage is applied between the at least one pair of electrodes, and a dynamic quantity relating to a distance between the conductive particles is detected based on the tunnel current.

Claims

1. A dynamic quantity sensor comprising an electrically insulating substance layer and at least one pair of electrodes contacting the electrically insulating substance layer,

wherein a plurality of conductive particles are dispersed in the electrically insulating substance layer so that a tunnel current flows when a voltage is applied between the at least one pair of electrodes, and a dynamic quantity relating to a distance between the conductive particles is detected based on the tunnel current.

2. A dynamic quantity sensor according to claim 1, further comprising a base for supporting the electrically insulating substance layer.

3. A dynamic quantity sensor according to claim 2, wherein the base is a flat substrate.

4. A dynamic quantity sensor according to claim 2, wherein the base is a beam in which both ends are fixed.

5. A dynamic quantity sensor according to claim 2, wherein the base is a cantilever in which one end is fixed.

6. A dynamic quantity sensor according to claim 1, wherein the diameter of the conductive particles is in the range of 1 to 50 nm.

7. A dynamic quantity sensor according to claim 1, wherein the conductive particles are dispersed in layers in the electrically insulating substance layer.

8. A dynamic quantity sensor according to claim 1, wherein the distance between the conductive particles is 5 nm or less.

9. A dynamic quantity sensor according to claim 1, wherein the conductive particles comprise at least one metal selected from the group consisting of aluminum (Al), chrome (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), gallium (Ga), palladium (Pd), silver (Ag), indium (In), tin (Sn), platinum (Pt), gold (Au), and lead (Pb).

10. A dynamic quantity sensor according to claim 1, wherein the electrically insulating substance layer is made of an oxide, and the conductive particles are made of at least one metal selected from the group consisting of gold (Au), silver (Ag), copper (Cu), platinum (Pt), and palladium (Pd).

11. A dynamic quantity sensor according to claim 1, wherein the electrically insulating substance layer comprises at least one material selected from the group consisting of oxides of silicon (Si), aluminum (Al), titanium (Ti), and hafnium (Hf) and nitrides of silicon (Si) and aluminum (Al).

12. A distortion resistance element comprising an electrically insulating substance layer and at least one pair of electrodes contacting the electrically insulating substance layer, for detecting a distortion arising in the electrically insulating substance layer based on a current flowing between the pair of electrodes,

wherein a plurality of conductive particles are dispersed in the electrically insulating substance layer so that a tunnel current flows when a voltage is applied to the at least one pair of electrodes.

13. A distortion resistance element according to claim 12, wherein the diameter of the conductive particles is in the range of 1 to 50 nm.

14. A distortion resistance element according to claim 12, wherein the conductive particles are dispersed in layers in the electrically insulating substance layer.

15. A distortion resistance element according to claim 12, wherein the distance between the conductive particles is 5 nm or less.

16. A distortion resistance element according to claim 12, wherein the conductive particles comprise at least one metal selected from the group consisting of aluminum (Al), chrome (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), gallium (Ga), palladium (Pd), silver (Ag), indium (In), tin (Sn), platinum (Pt), gold (Au), and lead (Pb).

17. A distortion resistance element according to claim 12, wherein the electrically insulating substance layer is made of an oxide, and the conductive particles comprise at least one metal selected from the group consisting of gold (Au), silver (Ag), copper (Cu), platinum (Pt), and palladium (Pd).

18. A distortion resistance element according to claim 12, wherein the electrically insulating substance layer comprises at least one material selected from the group consisting of oxides of silicon (Si), aluminum (Al), titanium (Ti), and hafnium (Hf) and nitrides of silicon (Si) and aluminum (Al).

19. A distortion resistance element according to claim 12, where the electrically insulating substance layer and the pair of electrodes are formed as a plurality of stacked layers.