Semiconductor device having resin gate hole through substrate for resin encapsulation

• US 5,679,978 A
• Filed: 10/24/1994
• Issued: 10/21/1997
• Est. Priority Date: 12/06/1993
• Status: Expired due to Fees

• Current Assignee: Fujitsu Limited, Kyushu Fujitsu Electronics Ltd. (Fujitsu Limited)
• Original Assignee: Fujitsu Limited, Kyushu Fujitsu Electronics Ltd. (Fujitsu Limited)
• Inventors: Kasai, Junichi, Ishiguro, Hiroyuki, Kawahara, Toshimi, Osawa, Mitsunada, Nakaseko, Shinya, Osumi, Mayumi, Katoh, Yoshitugu, Taniguchi, Shinichirou
• Primary Examiner(s): BROWN, PETER T
• Application Number:
  US08/330,848
• Time in Patent Office: 1,093 Days
• Field of Search: 257/678, 257/680, 257/697, 257/700, 257/704, 257/730, 257/778, 257/787, 257/788, 257/796
• US Class Current: 257/697
• CPC Class Codes: H01L 21/4853 Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/11003 for holding or transferring the bump preform
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49109 outside the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/24 solid or gel at the normal operating temperature of the device H01L23/3135 takes precedence
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/3128 the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 23/49816 Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/15151 : the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/1532 : the connection portion being formed on the die mounting surface of the substrate
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/16152 : Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01L 2924/16195 : Flat cap [not enclosing an internal cavity]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/18165 : of a wire bonded chip
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3512 : Cracking
• CPC Class Codes: Y10T 29/49146 : with encapsulating, e.g., potting, etc.
• CPC Class Codes: Y10T 29/49171 : with encapsulating

Abstract

A semiconductor device includes a substrate having top and bottom surfaces, a semiconductor element mounted on the top surface of the substrate, and a resin package made of a resin and encapsulating the semiconductor element. The substrate includes at least one resin gate hole enabling the resin to be introduced from the bottom surface of the substrate via the resin gate hole when encapsulating the semiconductor element by the resin.

Claims

1. A semiconductor device comprising:

a substrate having top and bottom surfaces;

a semiconductor element mounted on the top surface of said substrate;

a resin package made of a resin and encapsulating said semiconductor element,

said substrate including at least one resin gate hole enabling said resin to be introduced from the bottom surface of said substrate via the resin gate hole when encapsulating said semiconductor element by said resin; and

a frame body surrounding a periphery of said resin package, a thickness of said frame body and a thickness of said resin being approximately the same.

2. The semiconductor device as claimed in claim 1, wherein said resin package fills a recess to which said resin gate hole opens on the bottom surface of said substrate.

3. The semiconductor device as claimed in claim 1, wherein said resin includes no mold release agent.

4. The semiconductor device as claimed in claim 1, which further comprises:

a wiring layer provided on said substrate;

connecting means for electrically connecting said semiconductor element and said wiring layer; and

external connecting terminals provided on said wiring layer and used for electrically connecting the semiconductor device to an external element.

5. The semiconductor device as claimed in claim 4, wherein said connecting means includes wires electrically connecting said semiconductor element and said wiring layer.

6. The semiconductor device as claimed in claim 4, wherein said connecting means includes bumps electrically connecting said semiconductor element and said wiring layer.

7. The semiconductor device as claimed in claim 4, wherein said external connecting terminals include a lead member.

8. The semiconductor device as claimed in claim 4, wherein said external connecting terminals include bumps.

9. The semiconductor device as claimed in claim 4, wherein said external connecting terminals on said wiring layer include vias.

10. The semiconductor device as claimed in claim 4, wherein said wiring layer is made up of a multi-level circuit.

11. The semiconductor device as claimed in claim 10, wherein said multi-level circuit includes a stacked structure having wiping layers and insulator layers which are alternately stacked, and mechanical compressions making electrical connections among the wiring layers.

12. The semiconductor device as claimed in claim 1, wherein said substrate includes a plurality of resin gate holes.

13. The semiconductor device comprising;

a substrate having top and bottom surfaces;

a semiconductor element mounted on the top surface of said substrate;

a resin package made of a resin and encapsulating said semiconductor element,

said substrate including at least one resin gate hole enabling said resin to be introduced from the bottom surface of said substrate via the resin gate hole when encapsulating said semiconductor element by said resin; and

a lid member arranged above said resin package and including a plurality of through holes, said through holes providing a passage for moisture included within the resin of said resin package to escape outside said resin package.

14. The semiconductor device as claimed in claim 13, wherein said lid member is made of a material having a high thermal conductivity, said material being selected from a group consisting of (i) copper, aluminum, tungsten, molybdenum, clad materials of such metals, alloys of such metals and mixtures of such metals respectively having a thermal conductivity of 20 W/mk or greater, (ii) silicon nitride, aluminum nitride, alumina and composite materials of such ceramics, (iii) diamond, and (iv) composite materials of a plurality of metals, ceramics and diamond.

15. A semiconductor device comprising:

a circuit;

a semiconductor element having a top surface and mounted on said circuit;

a frame body provided on said circuit and surrounding said semiconductor element in a state where a gap is formed between said semiconductor element and said frame body; and

a resin package made of a resin filled on an inner side of said frame body and encapsulating said semiconductor element, a thickness of said resin and a thickness of said frame body being substantially the same,

said frame body including a resin gate hole which opens at a surface other than a surface confronting the top surface of said semiconductor element and enabling said resin to be introduced on the inner side of said frame body via the resin gate hole when encapsulating said semiconductor element by said resin.