Compact low-noise dynodes incorporating semiconductor secondary electron emitting materials

• US 5,680,008 A
• Filed: 04/05/1995
• Issued: 10/21/1997
• Est. Priority Date: 04/05/1995
• Status: Expired due to Fees

• Current Assignee: Advanced Technology Materials, Inc. (Entegris Incorporated)
• Original Assignee: Advanced Technology Materials, Inc. (Entegris Incorporated)
• Inventors: Brandes, George R., Miller, John B.
• Primary Examiner(s): O'Shea, Sandra L.
• Assistant Examiner(s): Patel, Vip
• Application Number:
  US08/417,010
• Time in Patent Office: 930 Days
• Field of Search: 313/533, 313/534, 313/535, 313/536, 313/103 R, 313/103 CM, 313/104, 313/105 CM
• US Class Current: 313/533
• CPC Class Codes: H01J 1/32 Secondary-electron-emitting electrodes H01J1/35 takes precedence
• CPC Class Codes: H01J 43/10 Dynodes H01J43/24, H01J43/26 take precedence

Abstract

This invention relates to electron emitting semiconductor materials for use in dynodes, dynode devices incorporating such materials, and methods of making the dynode devices. In particular, the invention relates to emissive materials having an electron affinity that is negative and which have low resistivity. The invention also relates to electronic devices such as electron multipliers, ion detectors, and photomultiplier tubes incorporating the dynodes comprising the materials, and to methods for fabricating the electronic devices. The secondary electron emitters of the present invention comprise wide bandgap semiconductor films selected from diamond, AlN, BN, Ga_1-y Al_y N where 0≦y≦1 and (AlN)_x (SiC)_1-x where 0.2≦x≦1. The films are preferably single crystal or polycrystalline. The films may be continuous or patterned.

Claims

1. A dynode device comprising a secondary electron emitting material wherein said material is a semiconducting film having a negative electron affinity selected from the group consisting of diamond, AlN, BN, Ga_1-y Al_y N and (AlN)_x (SiC)_1-x, where 0≦

y≦

1 and 0.2≦

x ≦

1 and the film is doped with one or more elements selected from the group consisting of Be, Mq, Zn, C, Si, S, Se, Cd, Hg, Ge, Li, Na, Sc, B, Al, N, P, Ga and As in a concentration from 10¹⁴ to 10²¹ atoms/cm³.

2. A dynode device according to claim 1, further comprising an electrode in conductive contact with the film for conducting electric current from the film.

3. A dynode device according to claim 2, wherein the electrode comprises a substrate for the film.

4. A dynode device according to claim 3, wherein the substrate is a single crystal.

5. A dynode device according to claim 4, wherein the substrate comprises a material selected from the group consisting of silicon, molybdenum, chromium, copper, titanium carbide, silicon carbide, sapphire, nickel, iron and cobalt.

6. A dynode device according to claim 1, wherein the film is continuous.

7. A dynode device according to claim 1, wherein the film is patterned.

8. A dynode device according to claim 1, wherein the film has a thickness of about 0.01 microns to about 1000 microns.

9. A dynode device according to claim 1, wherein the film is doped with a p-type dopant.

10. A dynode device according to claim 1, wherein the film is doped with an n-type dopant.

11. A dynode device according to claim 1, wherein the film has a secondary electron emitting surface having a surface dipole oriented positively toward the surface.

12. A dynode device according to claim 1, wherein the film is a semiconducting diamond film having a secondary electron yield of at least about two.

13. A dynode device according to claim 1, wherein the film is single crystal.

14. A dynode device according to claim 1, wherein the film is polycrystalline.

15. A dynode device according to claim 1, wherein the film has a secondary electron emitting surface which is curved.

16. A dynode device according to claim 1, wherein the film has a secondary electron emitting surface which is flat.

17. A dynode device according to claim 1, wherein the film is a coating on an inner surface of a tube.

18. A dynode device according to claim 1, in combination with an anode positioned with respect to the dynode device to receive at least one secondary emitted electron therefrom.

19. A dynode device according to claim 18, wherein the anode comprises a further dynode.

20. A dynode device according to claim 1, in combination with a photocathode, positioned with respect to the dynode device to emit at least one electron toward the dynode device in response to a photon incident on the surface of the photocathode, and an anode positioned with respect to the dynode device to receive at least one secondarily emitted electron therefrom.

21. A dynode device according to claim 20, wherein the anode comprises a further dynode device.

22. A dynode device according to claim 20, wherein the anode comprises a phosphor.

24. A dynode device according to claim 12, wherein the doping element is B.

25. A dynode device according to claim 24, wherein the film is doped with B to yield a room temperature resistivity of 10¹ Ω

cm to 10⁵ Ω

cm.

23. A dynode device comprising a secondary electron emitting material wherein said material is a semiconducting diamond film having a negative electron affinity, the film being doped with one or more elements selected from the group consisting of B, Li, Na, Sc, Al, N, P and As in a concentration from 10¹⁴ to 10²¹ atoms/cm³.

26. A dynode device comprising a secondary electron emitting material wherein said material is a semiconducting BN film having a negative electron affinity, the film being doped with one or more elements selected from the group consisting of Li, Na, Be, Mg, Zn, C, Si, P, As, S and Se in a concentration from 10¹⁴ to 10²¹ atoms cm³.

27. A dynode device comprising a secondary electron emitting material wherein said material is a semiconducting film having a negative electron affinity selected from the group consisting of AlN and Ga_1-y Al_y N, where 0≧

y≧

1, the film being doped with one or more elements selected from the group consisting of Li, Na, Be, Mg, Zn, Cd, Hg, C, Si, Ge, P, As, S, and Se in a concentration from 10¹⁴ to 10²¹ atoms/cm³.

28. A dynode device comprising a secondary electron emitting material wherein said material is a semiconducting (AlN)_x (SiC)_1-x film having a negative electron affinity and wherein 0.2≧

x≧

1, the film being doped with at least one or more elements selected from the group consisting of Li, Na, Be, Mg, Zn, Cd, Hg, Ga, Ge, P, As, S, and Se.

29. A dynode device according to claim 28, wherein the film is doped with the doping element in a concentration from 10¹⁴ to 10²¹ atoms/cm³.

30. A dynode device comprising a secondary electron emitting material wherein said material is a semiconducting diamond film having a negative electron affinity, the film being doped with one or more elements selected from the group consisting of B, Li, Na, Sc, Al, N, P and As, the diamond film having a secondary electron emitting surface and wherein at least 75% of the surface has a (111), (110) or (100) orientation.

31. A dynode device comprising a secondary electron emitting material wherein said material is a semiconducting diamond film having a negative electron affinity, the film being doped with one or more elements selected from the group consisting of B, Li, Na, Sc, Al, N, P and As, the diamond film having a secondary electron emitting surface and wherein at least about 25% of the surface has a (100) 1×

1 structure or a (111) 1×

1 structure.

32. A dynode device comprising a secondary electron emitting material wherein said material is a semiconducting diamond film having a negative electron affinity, the film being doped with one or more elements selected from the group consisting of B, Li, Na, Sc, Al, N, P and As, the diamond film having a secondary electron emitting surface and at least about 50% of the surface being hydrogen-terminated.

33. A dynode device comprising a secondary electron-emitting material wherein said material is a semiconducting film having a negative electron affinity selected from the group consisting of diamond, AlN, BN, Ga_1-y Al_y N and (AlN)_x (SiC)_1-x, where 0≦

y≦

1 and 0.2≦

x≦

1, wherein the film is free-standing.