Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces

• US 5,680,013 A
• Filed: 03/15/1994
• Issued: 10/21/1997
• Est. Priority Date: 03/15/1994
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: White, John M., Fodor, Mark A., Dornfest, Charles N., Bercaw, Craig A., Tomosawa, Hiroyuki Steven
• Primary Examiner(s): Pascal, Robert
• Assistant Examiner(s): KINKEAD, ARNOLD M
• Application Number:
  US08/213,880
• Time in Patent Office: 1,316 Days
• Field of Search: 204/298.34, 204/298.01, 204/298.14, 204/298.15, 156/345 P, 156/345 PW, 156/345 WH, 216/71, 118/723 E, 118/723 R, 315/111.21, 313/231.31
• US Class Current: 315/111.21
• CPC Class Codes: H01J 37/32495 Means for protecting the vessel against plasma
• CPC Class Codes: H01J 37/32559 Protection means, e.g. coatings

Abstract

Non-bonded ceramic protection is provided for metal surfaces in a plasma processing chamber, particularly heated metal electrode surfaces, in a plasma processing chamber, to prevent or inhibit attack of the heated metal surfaces by chemically aggressive species generated in the plasma during processing of materials, without bonding the ceramic material to the metal surface. In accordance with the invention the ceramic protection material comprises a thin cover material which is fitted closely, but not bonded, to the heated metal. This form of ceramic protection is particularly useful for protecting the surfaces of glow discharge electrodes and gas distribution apparatus in plasma process chambers used for processing semiconductor substrates to form integrated circuit structures. The particular ceramic material used to provide the desired protection from the gaseous species generated by the plasma are selected from the group consisting of aluminum nitride, crystalline aluminum oxide, magnesium fluoride, and sintered aluminum oxide.

Claims

1. A plasma processing chamber having aluminum surfaces including a planar aluminum surface and a sidewall aluminum surface on an aluminum susceptor therein protected from attack by species generated by a plasma generated in said chamber comprising ceramic surfaces, characterized by good dielectric properties, good thermal conductivity, and good thermal shock resistance, mounted between said aluminum surfaces and said plasma and in contact with said aluminum surfaces, but not bonded thereto, to thereby protect said aluminum surfaces while mitigating damage to said protective ceramic surfaces from thermal expansion rate mismatch between said aluminum surfaces and said ceramic surfaces, said aluminum susceptor provided with a ceramic disk on said planar aluminum surface of said aluminum susceptor, and a ceramic collar in peripheral contact with an exposed surface of said ceramic disk, said ceramic collar having a ceramic skirt depending therefrom extending over said sidewall aluminum surface of said aluminum susceptor to thereby inhibit contact of said aluminum surfaces on said aluminum susceptor by said species generated by said plasma.

2. The plasma processing chamber of claim 1 wherein said aluminum surfaces protected by said ceramic surfaces comprise anodized aluminum surfaces.

3. The plasma processing chamber of claim 1 wherein said aluminum surfaces protected by said ceramic surfaces comprise bare aluminum surfaces.

4. The plasma processing chamber of claim 1 wherein said ceramic collar and ceramic skirt thereon are further provided with fastening means to urge said ceramic collar against said ceramic disc and said aluminum susceptor.

5. The plasma processing chamber of claim 1 wherein said aluminum surfaces protected by said ceramic surfaces comprise surfaces on an aluminum showerhead in said chamber.

6. The plasma processing chamber of claim 1 wherein said aluminum surfaces are protected by ceramic surfaces selected from the group consisting of aluminum nitride, crystalline aluminum oxide, magnesium fluoride, sintered aluminum oxide, and magnesium oxide.

7. The plasma processing chamber of claim 1 wherein said plasma is a halogen gas plasma.

8. A plasma processing chamber having an aluminum susceptor therein protected from attack by species generated by a plasma generated in said chamber by ceramic surfaces mounted between said aluminum susceptor and said plasma and in contact with said aluminum susceptor but not bonded thereto, said ceramic surfaces further comprising:

a) a ceramic disk mounted on a planar surface of said aluminum susceptor, between said susceptor and said plasma;

b) a ceramic collar in peripheral contact with the exposed surface of said ceramic disk;

c) a ceramic skirt depending from said ceramic collar and extending over sidewall surfaces of said aluminum susceptor; and

d) fastening means to urge said collar against said ceramic disc and said aluminum susceptor;

to thereby inhibit contact of said aluminum susceptor surfaces by said gaseous species generated by said plasma, while mitigating damage to said protective ceramic surfaces from thermal expansion rate mismatch between said aluminum susceptor and said ceramic surfaces.

9. The plasma processing chamber of claim 8 wherein said ceramic surfaces are further characterized by good dielectric properties, good thermal conductivity, and good thermal shock resistance.

10. A process for treating semiconductor substrates in a plasma processing chamber having an aluminum susceptor electrode and an aluminum showerhead electrode therein while inhibiting attack of exposed aluminum surfaces of said aluminum electrodes by gaseous species generated in said chamber by a generated plasma which comprises covering said exposed aluminum surfaces on said aluminum susceptor and aluminum showerhead electrodes with a removable protective layer of a ceramic material selected from the group consisting of aluminum nitride, crystalline aluminum oxide, magnesium fluoride, and sintered aluminum oxide without bonding of said ceramic material to said aluminum surface to thereby protect said exposed aluminum surfaces from attack from said gaseous species generated by said plasma while inhibiting cracking of said ceramic material by thermal mismatching with said exposed aluminum surfaces, said aluminum susceptor provided with a ceramic disk on said planar aluminum surface of said aluminum susceptor, and a ceramic collar in peripheral contact with an exposed surface of said ceramic disk, said ceramic collar having a ceramic skirt depending therefrom extending over a sidewall aluminum surface of said aluminum susceptor to thereby inhibit contact of said exposed aluminum surfaces on said aluminum susceptor by said species generated by said plasma.

11. A plasma processing chamber having metal surfaces therein, including a planar metal surface and a sidewall metal surface on a metal susceptor therein, protected from attack by species generated by a plasma generated in said chamber by protective removable ceramic surfaces characterized by good dielectric properties, good thermal conductivity, and good thermal shock resistance, and mounted between said metal surfaces and said plasma, including said planar and sidewall metal surfaces of said metal susceptor, and in contact with said metal surfaces, but not bonded thereto, to thereby protect said planar and sidewall metal surfaces of said metal susceptor from said attack by species in said plasma, while mitigating damage to said protective removable ceramic surfaces from thermal expansion rate mismatch between said metal surfaces and said protective removable ceramic surfaces, said metal susceptor provided with a ceramic disk on said planar metal surface of said metal susceptor, and a ceramic collar in peripheral contact with an exposed surface of said ceramic disk, said ceramic collar having a ceramic skirt depending therefrom to extend over said sidewall metal surface of said metal susceptor to thereby inhibit contact of said metal surfaces on said metal susceptor by said species generated by said plasma.

12. The plasma processing chamber of claim 11 wherein said metal susceptor is covered with a cup-like shell of ceramic material contacting the planar and sidewall surfaces of said metal susceptor to protect said metal susceptor from said gaseous species generated by said plasma.

13. The plasma processing chamber of claim 12 wherein portions of said ceramic shell adjacent said sidewall surfaces of said metal susceptor are further provided with fastening means to urge said ceramic shell against said metal susceptor.

14. A plasma processing chamber capable of generating, in a plasma therein, gaseous species capable of attacking aluminum surfaces in said chamber, said plasma processing chamber having an aluminum susceptor therein for mounting a semiconductor substrate thereon and an aluminum showerhead for introducing processing gases into said chamber, said aluminum susceptor provided with a generally circular ceramic disc with a first generally planar surface facing said aluminum showerhead and also having sidewall surfaces thereon, and a ceramic collar in peripheral contact with an exposed surface of said ceramic disk, said ceramic collar having a ceramic skirt depending therefrom extending over said sidewall surfaces of said aluminum susceptor to thereby inhibit contact of said aluminum susceptor surfaces by said gaseous species generated by said plasma, said aluminum showerhead also having a generally planar surface facing said aluminum susceptor and also having sidewall surfaces thereon, each of said aluminum susceptor and showerhead surfaces having mounted thereon a protective layer of a ceramic material selected from the group consisting of aluminum nitride, crystalline aluminum oxide, magnesium fluoride, and sintered aluminum oxide, without bonding of said ceramic material to said aluminum surface, to thereby protect said aluminum surfaces from attack from said gaseous species generated by said plasma while inhibiting cracking of said ceramic material by thermal mismatching with said aluminum surfaces.

15. The plasma processing chamber of claim 14 wherein said ceramic collar and skirt thereon are further provided with fastening means to urge said collar against said ceramic disc and said aluminum susceptor.

16. The plasma processing chamber of claim 15 wherein said fastening means further comprise an annular groove in the inner surface of said depending skirt at a distance from said collar in excess of the thickness of said aluminum susceptor, and retention means received in said annular groove which contact an opposite surface of said susceptor to urge said collar against said ceramic disc and said aluminum susceptor thereunder.

17. The plasma processing chamber of claim 15 wherein said aluminum susceptor is also protected by a second ceramic disc having a diameter approximately equal to the inner diameter of said ceramic depending skirt and having one surface thereof positioned against the rear surface of said aluminum susceptor facing away from said aluminum showerhead, and said fastening means also retain said second ceramic disc against said aluminum susceptor.

18. The plasma processing chamber of claim 17 wherein said second ceramic disc has a diameter approximately equal to the inner diameter of said ceramic depending skirt, and said fastening means contact a surface of said second ceramic disc facing away from said aluminum susceptor to maintain said second ceramic disc against said susceptor to thereby protect the rear surface of said susceptor facing away from said showerhead.

19. The plasma processing chamber of claim 18 wherein said fastening means further comprise:

a) an annular groove in the inner surface of said depending skirt at a distance from said collar in excess of the combined thickness of said aluminum susceptor and said second ceramic disc; and

b) retention means received in said groove which contact an opposite surface of said aluminum susceptor to urge said collar against said ceramic disc and said aluminum susceptor thereunder.

20. The plasma processing chamber of claim 18 wherein said fastening means further comprise:

a) an annular groove in the inner surface of said depending skirt at a distance from said collar in excess of the thickness of said aluminum susceptor and said second ceramic disc;

b) one or more tabs on the periphery of said second ceramic disc; and

c) one or more slots provided in the bottom surface of said depending skirt in communication with said annular groove, and in alignment with said tabs on said second ceramic disc to thereby permit said tabs to be received in said slots and rotated in said annular groove;

to thereby retain said collar against said ceramic disc and said aluminum susceptor thereunder, while also retaining said second ceramic disc against said aluminum susceptor.

21. The plasma processing chamber of claim 18 wherein said fastening means further comprise:

a) female threads on the inner surface of said depending skirt adjacent an end edge of said skirt; and

b) matching male threads on an outer edge of said second ceramic disc;

to permit said threaded second ceramic disc to be screwed into said depending skirt.

22. A plasma processing chamber capable of generating, in a plasma therein, gaseous species capable of attacking aluminum surfaces in said chamber, said plasma processing chamber having an aluminum susceptor therein for mounting a semiconductor substrate thereon and an aluminum showerhead for introducing processing gases into said chamber;

a) said aluminum susceptor further comprising;

i) a generally circular aluminum disc having a first generally planar surface facing said aluminum showerhead and also having sidewall surfaces thereon;

ii) a cup-like shell of ceramic material contacting said planar and sidewall surfaces of said aluminum susceptor to protect said aluminum susceptor from said gaseous species generated by said plasma; and

iii) fastening apparatus provided with portions of said shell of ceramic material adjacent said sidewall surfaces of said aluminum susceptor to urge said shell of ceramic material against said aluminum susceptor, said fastening apparatus comprising an annular groove in the inner surface of said ceramic shell adjacent said aluminum susceptor sidewalls having a width in excess of the thickness of said aluminum susceptor, and retention means received in said annular groove which contact an opposite surface of said aluminum susceptor to urge said ceramic shell against said planar surface of said aluminum susceptor facing said aluminum showerhead;

b) said aluminum showerhead further comprising;

i) a generally planar surface facing said aluminum susceptor;

ii) sidewall surfaces thereon; and

iii) a protective layer of a ceramic material mounted on said planar and sidewall aluminum showerhead surfaces;

said ceramic material on said aluminum susceptor and said aluminum showerhead selected from the group consisting of aluminum nitride, crystalline aluminum oxide, magnesium fluoride, and sintered aluminum oxide, said ceramic material mounted on said aluminum surfaces on said aluminum susceptor and said aluminum showerhead, without bonding of said ceramic material thereto, to thereby protect said aluminum surfaces from attack from said gaseous species generated by said plasma while inhibiting cracking of said ceramic material by thermal mismatching with said aluminum surfaces.

23. The plasma processing chamber of claim 22 wherein said opposite surface of said aluminum susceptor is also protected by a second ceramic disc having a diameter approximately equal to the inner diameter of said portion of said ceramic shell adjacent said susceptor sidewall, and said retention means contact a surface of said second ceramic disc facing away from said aluminum susceptor to urge said second ceramic disc against said susceptor to thereby protect the rear surface of said susceptor facing away from said showerhead.

24. A plasma processing chamber capable of generating, in a plasma therein, gaseous species capable of attacking aluminum surfaces in said chamber, said plasma processing chamber having an aluminum susceptor therein for mounting a semiconductor substrate thereon and an aluminum showerhead for introducing processing gases into said chamber;

a) said aluminum susceptor further comprising;

i) a generally circular aluminum disc having a first generally planar surface facing said aluminum showerhead and also having sidewall surfaces thereon;

ii) a cup-like shell of ceramic material contacting said planar and sidewall surfaces of said aluminum susceptor to protect said aluminum susceptor from said gaseous species generated by said plasma;

iii) a ceramic disc having a diameter approximately equal to the inner diameter of said portion of said ceramic shell adjacent said aluminum susceptor sidewalls and having one surface thereof positioned against a rear surface of said aluminum susceptor facing away from said aluminum showerhead, said ceramic disc being provided with one or more tabs thereon; and

iv) fastening apparatus provided with portions of said shell of ceramic material adjacent said sidewall surfaces of said aluminum susceptor to urge said shell of ceramic material against said aluminum susceptor, said fastening apparatus further comprising an annular groove in the inner surface of said portion of said ceramic shell adjacent said aluminum susceptor sidewall at a distance from the inner surface of the top of said ceramic shell in excess of the thickness of said aluminum susceptor, and one or more slots provided in the bottom surface of said ceramic shell in communication with said annular groove, and in alignment with said tabs on said ceramic disc to permit said tabs to be received in said slots and rotated in said annular groove to thereby retain said ceramic shell against the said planar surface of said aluminum susceptor facing said aluminum showerhead, while also retaining said ceramic disc against said aluminum susceptor;

b) said aluminum showerhead further comprising;

i) a generally planar surface facing said aluminum susceptor;

ii) sidewall surfaces thereon; and

iii) a protective layer of a ceramic material mounted on said planar and sidewall aluminum showerhead surfaces;

said ceramic material on said aluminum susceptor and said aluminum showerhead selected from the group consisting of aluminum nitride, crystalline aluminum oxide, magnesium fluoride, and sintered aluminum oxide, said ceramic material mounted on said aluminum surfaces on said aluminum susceptor and said aluminum showerhead, without bonding of said ceramic material thereto, to thereby protect said aluminum surfaces from attack from said gaseous species generated by said plasma while inhibiting cracking of said ceramic material by thermal mismatching with said aluminum surfaces.

25. The plasma processing chamber of claim 24 wherein said aluminum susceptor is further provided with openings therein to assist in raising a semiconductor substrate thereon and ceramic sleeves are received in said openings to line said openings to protect the aluminum surfaces of said openings holes from said gaseous species generated by said plasma.

26. The plasma processing chamber of claim 25 wherein said ceramic sleeves received in said openings in said aluminum susceptor each have a flange on one end thereon received in an enlarged counterbore in one surface of said aluminum susceptor.

27. The plasma processing chamber of claim 24 wherein said aluminum showerhead is provided with a ceramic disk on its surface facing said aluminum susceptor and having openings therein to permit gases to enter said processing chamber;

and a ceramic collar in peripheral contact with the exposed surface of said ceramic disk, said ceramic collar having a skirt thereon extending up over said aluminum sidewall surfaces of said aluminum showerhead to thereby inhibit contact of said aluminum showerhead surfaces by said gaseous species generated by said plasma.

28. The plasma processing chamber of claim 27 wherein said ceramic collar and skirt thereon are further provided with fastening means to urge said ceramic collar against said ceramic disc and said aluminum showerhead.

29. A system for protecting the metal surfaces of a metal susceptor, including a planar metal surface and a sidewall metal surface on said metal susceptor, from attack by species generated by a plasma generated in a plasma processing chamber, comprising removable ceramic members having protective ceramic surfaces thereon characterized by good dielectric properties, good thermal conductivity, and good thermal shock resistance, and capable of being mounted between said metal surfaces of said metal susceptor and said plasma, including said planar metal surface and said sidewall metal surface on said metal susceptor, and in contact with said metal surfaces, but not bonded thereto, to thereby protect said planar and sidewall metal surfaces of said metal susceptor from said attack by species in said plasma, while mitigating damage to said protective ceramic surfaces from thermal expansion rate mismatch between said metal surfaces and said ceramic surfaces, said removable ceramic members including a ceramic disk mountable on said planar metal surface of said metal susceptor, and a ceramic collar in peripheral contact with an exposed surface of said ceramic disk, said ceramic collar having a ceramic skirt depending therefrom extending over said sidewall metal surface of said metal susceptor to thereby inhibit contact of said metal surfaces on said metal susceptor by said species generated by said plasma.

30. The system of claim 29 which further includes ceramic members having protective ceramic surfaces thereon, characterized by good dielectric properties, good thermal conductivity, and good thermal shock resistance, and capable of being mounted between metal surfaces of a metal showerhead and said plasma, including a planar metal surface and a sidewall metal surface on said metal showerhead, and in contact with said metal surfaces of said metal showerhead, but not bonded thereto, to thereby protect said planar and sidewall metal surfaces of said metal showerhead from said attack by species in said plasma, while mitigating damage to said protective ceramic surfaces from thermal expansion rate mismatch between said metal surfaces on said metal showerhead and said protective ceramic surfaces.