Mixer

• US 5,680,078 A
• Filed: 07/09/1996
• Issued: 10/21/1997
• Est. Priority Date: 07/10/1995
• Status: Expired due to Term

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Murata Manufacturing Co Limited
• Inventors: Ariie, Mitsuo
• Primary Examiner(s): Mis, David
• Application Number:
  US08/677,075
• Time in Patent Office: 469 Days
• Field of Search: 332/106, 332/168, 332/177, 332/178, 327/306, 375/300, 375/301, 455/108, 455/109
• US Class Current: 332/178
• CPC Class Codes: H03C 1/36 by means of semiconductor device having at least three electrodes H03C1/34, H03C1/50, H03C1/52, H03C1/62 take precedence
• CPC Class Codes: H03D 7/125 with field effect transistors
• CPC Class Codes: H03D 9/0658 by means of semiconductor devices having more than two electrodes

Abstract

A voltage and a data signal superimposed on the voltage are input to the drain of an FET and a carrier signal is input to the gate of the FET. The FET mixes the data signal and the carrier signal to generate the mixed signal. Two capacitors are connected between the source and ground for blocking direct current and passing alternating current.

Claims

1. A mixer for mixing a carrier signal and a data signal, comprising:

an FET for mixing said carrier signal and said data signal which is capable of generating a mixed signal by receiving a voltage and said data signal which is superimposed on said voltage via the drain of said FET and by receiving said carrier signal via the gate of said FET; and

at least one capacitive device connected between the source of said FET and ground for blocking direct current and for passing alternating current.

2. A mixer according to claim 1, further comprising a second capacitive device which is connected to the drain of said FET and which has a low impedance at the frequency of said mixed signal and a high impedance at the frequency of said data signal.

3. A mixer according to claim 1, further comprising:

an inductive device which is connected to the drain of said FET and which has a high impedance at the frequency of said mixed signal and a low impedance at the frequency of said data signal.

4. A mixer according to claim 2, further comprising:

an inductive device which is connected to the drain of said FET and which has a high impedance at t. he frequency of said mixed signal and a low impedance at the frequency of said data signal.

5. A mixer for mixing a carrier signal and a data signal, comprising:

a FET for mixing said carrier signal and said data signal which is capable of generating a mixed signal by receiving a voltage and said data signal which is superimposed on said voltage via the source of said FET and by receiving said carrier signal via the gate of said FET; and

at least one capacitive device connected between the drain of said FET and ground for blocking direct current and for passing alternating current.

6. A mixer according to claim 5, further comprising a second capacitive device which is connected to the source of said FET and which has a low impedance at the frequency of said mixed signal and a high impedance at the frequency of said data signal.

7. A mixer according to claim 5, further comprising:

an inductive device which is connected to the source of said FET and which has a high impedance at the frequency of said mixed signal and a low impedance at the frequency of said data signal.

8. A mixer according to claim 6, further comprising:

an inductive device which is connected to the source of said FET and which has a high impedance at the frequency of said mixed signal and a low impedance at the frequency of said data signal.