Plasma processing method
First Claim
1. A plasma processing method for performing an etching process on a wafer while holding the wafer on an electrode in a chamber by electrostatic attraction, the etching process causing deposition of a polymer including carbon in the chamber, wherein after the wafer has been etched, the method includes a further step of eliminating a residual electrostatic attractive force remaining on said wafer after completion of said etching process through use of a gas plasma of O2 gas to deelectrify residual electric charge on said wafer by discharging into said plasma, and wherein said polymer is eliminated through said use of the gas plasma of O2 gas, to clean the chamber.
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Accused Products
Abstract
A method of cleaning an etching chamber, with a high throughput, of a plasma processing apparatus for etching by use of hydrogen bromide (HBr) as an etching gas while holding a wafer on an electrode by electrostatic chuck. When the static charge on the wafer electrostatically chucked on the electrode is eliminated after the completion of the etching, O2 gas is introduced into the etching chamber from a gas flow-rate controller. A plasma of O2 gas is generated to cause the electric charge on the wafer to flow to the earth through the plasma, and at the same time, the interior of the etching chamber is cleaned.
51 Citations
21 Claims
- 1. A plasma processing method for performing an etching process on a wafer while holding the wafer on an electrode in a chamber by electrostatic attraction, the etching process causing deposition of a polymer including carbon in the chamber, wherein after the wafer has been etched, the method includes a further step of eliminating a residual electrostatic attractive force remaining on said wafer after completion of said etching process through use of a gas plasma of O2 gas to deelectrify residual electric charge on said wafer by discharging into said plasma, and wherein said polymer is eliminated through said use of the gas plasma of O2 gas, to clean the chamber.
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8. A plasma processing method for performing an etching process on a wafer having a film of a silicon-containing material, to etch the film, while holding the wafer on an electrode in a chamber by electrostatic attraction, wherein after the etching process has been performed using a plasma of a bromine-containing gas, the method includes a further step of post-processing said film of the silicon-containing material using a plasma of a mixture gas containing O2 and CHF3 continuously in vacuum after said film has been etched.
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13. A plasma processing method for performing an etching process on a wafer having a film of a silicon-containing material, to etch the film, while holding the wafer on an electrode in a chamber by electrostatic attraction, wherein after the etching process has been performed using a plasma of a chlorine-containing gas, the method includes a further step of post-processing said film of the silicon-containing material using a plasma of a mixture gas containing O2 and CHF3 continuously in vacuum after said film has been etched.
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17. A plasma processing method comprising the steps of:
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performing an etching process on a wafer in a chamber, which causes the deposition of a polymer including carbon components in the chamber; and producing a plasma of O2 gas in the chamber, and eliminating the polymer deposited in the chamber by reacting with the plasma of O2 gas. - View Dependent Claims (18, 19, 20, 21)
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Specification