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Etching to form cross-over, non-intersecting channel networks for use in partitioned microelectronic and fluidic device arrays for clinical diagnostics and chemical synthesis

  • US 5,681,484 A
  • Filed: 05/31/1995
  • Issued: 10/28/1997
  • Est. Priority Date: 11/10/1994
  • Status: Expired due to Term
First Claim
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1. A method of forming in a planar substrate a network of capillary channels for separately transporting a plurality of different liquids, wherein channels for a particular liquid cross over channels for another liquid without the channels intersecting, the channels being made up of via segments and planar segments formed on a first surface of the substrate or a second surface of the substrate, wherein the first surface of the substrate is a top or bottom surface of the substrate and the second surface of the substrate is a top or bottom surface of the substrate and is opposite the first surface, wherein the method comprises:

  • (a) providing the substrate, which comprises glass, fused silica, quartz or silicon;

    (b) depositing a first etch resistance coating and second etch resistance coating to the first and second surfaces, respectively, of the substrate;

    (c) applying a first photoresist layer over the first etch resistance coating;

    (d) exposing and developing the first photoresist layer and etching the first etch resistance coating to form a plurality of first openings at the position of via segments in the first photoresist layer and the first etch resistance coating;

    (e) etching the substrate at the first openings through to the second etch resistance coating to form first surface via segments;

    (f) exposing and developing the first photoresist layer and etching the first etch resistance coating to form a plurality of second openings at the positions of the first surface planar channel segments in the first photoresist layer and the first etch resistance coating;

    (g) etching the substrate under the second openings to form first surface planar channel segments;

    (h) applying a second photoresist layer over the second etch resistance coating;

    (i) exposing and developing the second photoresist layer and etching the second etch resistance coating to form a plurality of third openings at the positions of second surface planar channel segments;

    (j) etching the substrate at the third openings to form second surface planer channel segments; and

    (k) sealing cover plates to both sides of the substrate to enclose the channels, thereby forming said network.

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