Microwave power SOI-MOSFET with high conductivity metal gate
First Claim
1. A method of manufacturing a high power, microwave frequency SOI-MOSFET device comprising the steps of(a) forming a SOI device with a silicon layer on a substrate insulated with an oxide,(b) forming a retrograde doping profile of a first conductivity type in the silicon layer,(c) forming a plurality of metal gate fingers on a gate oxide over the silicon layer, the metal gate fingers comprising molybdenum.(d) forming a self-aligned source-shield of the first conductivity type in the silicon layer, the source-shield being disposed adjacent to at least one of the metal gate fingers,(e) forming a source region within the source-shield, and(f) forming a drain region in the silicon layer, and said drain region being adjacent to the one metal gate finger at a side opposite to the source region with the source and drain regions being of a second conductivity type.
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Abstract
A technique for making a microwave, high power SOI-MOFET device is set forth together with such a device. An important aspect of this structure is the presence of high conductivity metal gate fingers for the device.
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Citations
15 Claims
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1. A method of manufacturing a high power, microwave frequency SOI-MOSFET device comprising the steps of
(a) forming a SOI device with a silicon layer on a substrate insulated with an oxide, (b) forming a retrograde doping profile of a first conductivity type in the silicon layer, (c) forming a plurality of metal gate fingers on a gate oxide over the silicon layer, the metal gate fingers comprising molybdenum. (d) forming a self-aligned source-shield of the first conductivity type in the silicon layer, the source-shield being disposed adjacent to at least one of the metal gate fingers, (e) forming a source region within the source-shield, and (f) forming a drain region in the silicon layer, and said drain region being adjacent to the one metal gate finger at a side opposite to the source region with the source and drain regions being of a second conductivity type.
Specification