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Microwave power SOI-MOSFET with high conductivity metal gate

  • US 5,681,761 A
  • Filed: 12/28/1995
  • Issued: 10/28/1997
  • Est. Priority Date: 12/28/1995
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing a high power, microwave frequency SOI-MOSFET device comprising the steps of(a) forming a SOI device with a silicon layer on a substrate insulated with an oxide,(b) forming a retrograde doping profile of a first conductivity type in the silicon layer,(c) forming a plurality of metal gate fingers on a gate oxide over the silicon layer, the metal gate fingers comprising molybdenum.(d) forming a self-aligned source-shield of the first conductivity type in the silicon layer, the source-shield being disposed adjacent to at least one of the metal gate fingers,(e) forming a source region within the source-shield, and(f) forming a drain region in the silicon layer, and said drain region being adjacent to the one metal gate finger at a side opposite to the source region with the source and drain regions being of a second conductivity type.

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