Silicon transducer with composite beam

• US 5,682,053 A
• Filed: 01/18/1996
• Issued: 10/28/1997
• Est. Priority Date: 03/30/1992
• Status: Expired due to Fees

• Current Assignee: Silanna Semiconductor Pty Ltd. (Renesas Electronics Corporation)
• Original Assignee: AWA Microelectronics Pty. Limited
• Inventors: Wiszniewski, Witold
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US08/588,290
• Time in Patent Office: 649 Days
• Field of Search: 257/930, 257/619, 257/622, 257/417, 257/418, 257/419, 257/466, 257/467, 257/470, 257/522, 257/401, 73/DIG. 1, 73/514.21, 73/514.22, 73/514.36
• US Class Current: 257/401
• CPC Class Codes: B81B 2201/0278 Temperature sensors
• CPC Class Codes: B81B 2203/0109 Bridges
• CPC Class Codes: B81B 2203/0118 Cantilevers
• CPC Class Codes: B81C 1/0019 Flexible or deformable structures not provided for in groups B81C1/00142 - B81C1/00182
• CPC Class Codes: G01K 7/028 using microstructures, e.g. made of silicon
• CPC Class Codes: H01L 21/76264 SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
• CPC Class Codes: H01L 21/76289 Lateral isolation by air gap
• CPC Class Codes: H01L 21/764 Air gaps H01L21/76264 takes precedence
• CPC Class Codes: H01L 23/4822 Beam leads
• CPC Class Codes: H01L 24/01 Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/12036 PN diode
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 31/035281 Shape of the body
• CPC Class Codes: H01L 31/103 the potential barrier being of the PN homojunction type
• CPC Class Codes: H10N 10/01 Manufacture or treatment
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy
• CPC Class Codes: Y10S 257/93 Thermoelectric, e.g. peltier effect cooling
• CPC Class Codes: Y10S 73/01 Vibration

Abstract

A simox wafer includes substrate (1), simox silicon dioxide layer (2) and monocrystalline simox silicon layer (3). An additional silicon nitride layer (5) is deposited on top of silicon layer (3) to allow the fabrication of a monocrystalline beam (4) by selectively etching the dioxide layer (2). The thermal insulating property of the resultant beam (4) offers an ideal site for construction of thermocouples (29), light modulators (60) and active components such as p-n diodes (34), MOS transistors (47) and bipolar transistors.

Claims

1. A silicon microstructure comprising a silicon wafer having a substrate and a monocrystalline silicon layer separated by a buried silicon dioxide layer, said silicon dioxide layer including a cavity, said microstructure including a composite beam spanning said cavity and having adjacent silicon and silicon nitride layers, said beam being self-supporting.

2. A microstructure according to claim 1 wherein said beam extends longitudinally across said cavity between two ends and includes a transverse length less than the transverse length of said cavity.

3. A microstructure according to claim 2 wherein said ends of said beam are respectively electrically accessible by way of contacts.

4. A microstructure according to claim 2 wherein said beam includes doped regions within said silicon layer for forming active components selected from the following:

p-n junction diode;

MOS transistor; and

bipolar transistor.

5. A microstructure according to claim 4 wherein a voltage is applied to said substrate to modify the electrical properties of said beam.

6. A microstructure according to claim 1 wherein said beam has a span of at least 50 μ

m.

7. A microstructure according to claim 4 wherein said beam has a span of at least 100 μ

m.

8. A microstructure according to claim 1 wherein said beam supports a thermojunction formed between said silicon layer of said beam and an adjacent metal layer.

9. A microstructure according to claim 8 wherein said metal layer is adapted to absorb infra-red radiation.

10. A microstructure according to claim 8 wherein said thermojunction is centrally disposed along said beam to facilitate thermal isolation from said substrate.

11. A microstructure according to claim 8 including a plurality of said thermojunctions which are electrically connected in series.

12. A microstructure according to claim 11 wherein each said thermojunction is formed in a respective beam spanning said cavity.

13. A microstructure according to claim 8 wherein said metal layer is platinum.

14. A microstructure according to claim 1 wherein said beam is at least partially transparent to a range of wavelengths of electromagnetic radiation, said microstructure also including actuation means to cause said beam to deflect and effect constructive and destructive interference between said radiation which is reflected from said cavity and said beam.

15. A microstructure according to claim 14 wherein said cavity has a depth comparable with said wavelengths in said range.

16. A microstructure according to claim 14 wherein said actuation means provides an electrical potential between the substrate and said beam to cause said beam to deflect.

17. A microstructure according to claim 16 wherein said voltage is varied to modulate said radiation.

18. A microstructure according to claim 14 wherein said actuation means mechanically deflects said beam.

19. A microstructure according to claim 1 wherein said beam supports at least one integrated semiconductor device.

20. A microstructure according to claim 19 wherein said device is a p-n junction diode formed in said silicon layer of said beam, said diode being responsive to electromagnetic radiation of a predetermined wavelength.

21. A microstructure according to claim 1 wherein said beam includes a metal layer for absorbing electromagnetic radiation of a predetermined wavelength.

22. A microstructure according to claim 21 wherein said predetermined wavelength lies in the infra-red range of wavelengths.