Semiconductor device incorporating a temperature fuse

• US 5,682,057 A
• Filed: 02/29/1996
• Issued: 10/28/1997
• Est. Priority Date: 03/03/1995
• Status: Expired due to Term

• Current Assignee: ROHM Co., Ltd.
• Original Assignee: ROHM Co., Ltd.
• Inventors: Kuriyama, Chojiro
• Primary Examiner(s): Saadat, Mahshid D.
• Assistant Examiner(s): CLARK, SHEILA V
• Application Number:
  US08/609,019
• Time in Patent Office: 607 Days
• Field of Search: 257/665, 257/589, 257/467, 257/666
• US Class Current: 257/529
• CPC Class Codes: H01H 37/761 with a fusible element forming part of the switched circuit H01H37/767 takes precedence
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/451 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/48599 Principal constituent of the connecting portion of the wire connector being Gold (Au)
• CPC Class Codes: H01L 2224/48699 Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
• CPC Class Codes: H01L 2224/48799 Principal constituent of the connecting portion of the wire connector being Copper (Cu)
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 23/49562 for devices being provided for in H01L29/00
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/06 of a plurality of bonding areas
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/13033 : TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/181 : Encapsulation

Abstract

A semiconductor device is provided which comprises a semiconductor chip including at least one semiconductor element and at least two surface electrodes, at least two lead terminals one of which is electrically connected to a first one of the surface electrodes, a temperature fuse element provided adjacent to the semiconductor element, and a package commonly enclosing the semiconductor chip, the fuse element, and part of the lead terminals. The temperature fuse element includes a patterned conductor strip formed on an insulating surface to be melt-cut at a predetermined temperature. One end of the patterned conductor strip is electrically connected to a second one of the surface electrodes, whereas the other end of the patterned conductor strip is electrically connected to another of the lead terminals.

Claims

1. A semiconductor device comprising:

a semiconductor chip including at least one semiconductor element and at least one semiconductor element and at least two surface electrodes;

at least two lead terminals one of which is electrically connected to a first one of the surface electrodes;

a temperature fuse element provided adjacent to the semiconductor element, the temperature fuse element including a patterned flat conductor strip formed on a flat insulating surface to be melt-cut at a predetermined temperature, one end of the patterned conductor strip being electrically connected to a second one of the surface electrodes, the other end of the patterned conductor strip being electrically connected to another of the lead terminals; and

a package separate from the insulating surface for commonly enclosing the semiconductor chip, the fuse element, and part of the lead terminals.

2. The semiconductor device according to claim 1, wherein the conductor strip is made of a low-melting-point metal.

3. The semiconductor device according to claim 2, wherein the conductor strip is made of solder.

4. The semiconductor device according to claim 1, wherein the conductor strip has a pair of enlarged wider end portions and a narrower intermediate portion.

5. The semiconductor device according to claim 4, wherein the intermediate portion of the conductor strip is covered by a soft elastic resin member.

6. The semiconductor device according to claim 4, wherein an electrode pad is formed on each enlarged end portion of the conductor strip.

7. The semiconductor device according to claim 1, wherein the insulating surface is provided by a substrate which is separate from the semiconductor chip.

8. The semiconductor device according to claim 7, wherein the substrate has an insulating surface layer which provides the insulating surface.

9. The semiconductor device according to claim 7, wherein said one end of the conductor strip is electrically connected to the second one of the surface electrodes through a metal wire.

10. The semiconductor device according to claim 7, wherein the semiconductor chip and the substrate are commonly mounted on a metal base plate which has an integral lead terminal.

11. The semiconductor device according to claim 1, wherein the insulating surface is provided by an insulating surface layer formed on the semiconductor chip.

12. The semiconductor device according to claim 11, wherein the conductor strip extends from the second one of the surface electrodes to an electrode pad formed on the insulating surface layer.

13. The semiconductor device according to claim 11, wherein the semiconductor chip is mounted on a metal base plate which has an integral lead terminal.