CAS recognition in burst extended data out DRAM

• US 5,682,354 A
• Filed: 11/06/1995
• Issued: 10/28/1997
• Est. Priority Date: 11/06/1995
• Status: Expired due to Term

• Current Assignee: Round Rock Research LLC
• Original Assignee: Micron Technology, Inc.
• Inventors: Manning, Troy
• Primary Examiner(s): Nelms, David C.
• Assistant Examiner(s): NIRANJAN, FRANK
• Application Number:
  US08/553,986
• Time in Patent Office: 722 Days
• Field of Search: 365/236, 365/233.5, 365/238.5, 365/239, 365/235
• US Class Current: 365/233.5
• CPC Class Codes: G11C 11/407 for memory cells of the field-effect type
• CPC Class Codes: G11C 7/1024 Extended data output [EDO] mode, i.e. keeping output buffer enabled during an extended period of time
• CPC Class Codes: G11C 7/22 Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management

Abstract

An integrated memory circuit is described which can be operated in a burst access mode. The memory circuit includes an address counter which changes column addresses in one of a number of predetermined patterns. The memory includes generator circuit for generating an internal control signal based upon external column address signals. The generator circuit detects the first active transition of the column address signals and the first inactive transition of the column address signals.

Claims

1. A memory device having a plurality of addressable memory elements comprising:

address circuitry adapted to operate the memory device in a burst access mode;

a first and second external address latch signals; and

a generator circuit responsive to the first and second external address latch signals to generate a control signal which transitions to an active state in response to either the first or second external

address latch signal that transitions to a first logic level first, and transitions to an in active state in response to either the first or second external address latch signal that transition to a second logic level first.

2. A memory device having a plurality of addressable memory elements comprising:

address circuitry adapted to operate the memory device in a burst access mode;

first and second external address latch signals; and

a generator circuit responsive to the first and second external address latch signals to generate a control signal which transitions to an active state in response to a first logic level transition in either of the first or second address latch signals and transitions to an in-active state in response to a second logic level transition in either of the first or second external address latch signals;

the generator circuit comprises;

an output circuit coupled to the plurality of external address latch signals, the output circuit being responsive to the first logic level transition in the plurality of external address latch signals;

a plurality of trigger circuits coupled to the plurality of external address latch signals; and

an enable circuit coupled to the plurality of trigger circuits and the output circuit, the enable circuit being responsive to the second logic level transition in the plurality of external address latch signals to disable the output circuit.

3. The memory device of claim 2 wherein the output circuit comprises an enabled logic gate.

4. The memory device of claim 3 wherein the enabled logic gate is a NAND gate.

5. An integrated memory circuit comprising:

a memory array having a plurality of addressable memory cells;

a generator circuit responsive to first and second external address latch signals to generate a control signal which transitions to an active state in response to a first logic level transition in either of the first or second external address latch signals, and transitions to an in-active state in response to a second opposite logic level transition in either of the first or second external address latch signal; and

an address counter to receive a first memory cell address and adapted to generate a series of memory cell addresses in response to the control signal.

6. The integrated memory circuit of claim 5 wherein the generator circuit comprises:

an output circuit coupled to the plurality of external address latch signals, the output circuit being responsive to the first logic level transition in the plurality of external address latch signals;

a plurality of trigger circuits coupled to the plurality of external address latch signals; and

an enable circuit coupled to the plurality of trigger circuits and the output circuit, the enable circuit being responsive to the second logic level transition in the plurality of external address latch signals to disable the output circuit.

7. The integrated memory circuit of claim 6 wherein the output circuit comprises an enabled logic gate.

8. The integrated memory circuit of claim 7 wherein the enabled logic gate is a NAND gate.

9. The integrated memory circuit of claim 6 wherein the enable circuit is a NAND gate having its output coupled to the output circuit and its inputs coupled to the plurality of trigger circuits.

10. The integrated memory circuit of claim 5 wherein the plurality of external address latch signals are column address signals (CAS*).

17. The integrated memory circuit of claim 5 further comprising:

a select circuit for adapting the generator circuit to respond to a single column address strobe (CAS) signal.

11. A method of generating a control signal in a memory device, the method comprising the steps of:

receiving a first external address latch signal;

receiving a second external address latch signal;

detecting a transition from a first logic state to a second logic state in either the first external address latch signal or the second external address latch signal;

transitioning the control signal in response to the detection of the transition from a first logic state to a second logic state;

detecting a transition from the second logic state to the first logic state in either the first external address latch signal or the second external address latch signal; and

transitioning the control signal in response to the detection of the transition from the second logic state to the first logic state.

12. A method of generating an active low control signal in a memory device, the method comprising the steps of:

receiving a first active low column address signal;

receiving a second active low column address signal;

detecting a first high to low transition in either the first or second active low column address signal;

transitioning the active low control signal from a high to low logic state in response to the detected high to low transition;

detecting a first low to high transition in either the first or second active low column address signal; and

transitioning the active low control signal from a low to a high logic state in response to the detected low to high transition.

13. A memory device comprising:

a plurality of addressable memory elements;

first and second externally provided column address strobe (CAS) signals; and

a generator circuit coupled to the first and second CAS signals, the generator circuit provides a control signal which transitions to an active state in response to a first logic level transition in either of the first or second CAS signals, and transitions to an inactive state in response to a second opposite logic level transition in either of the first or second CAS signals.

14. The memory device of claim 13 wherein the first logic level transition in the first or second CAS signal is a inactive to active transition.

15. The memory device of claim 14 wherein the second logic level transition in the first or second CAS signal is an active to inactive transition.

16. The memory device of claim 13 wherein the generator circuit comprises:

an output circuit coupled to the first and second CAS signals and adapted to provide an output signal which transitions to an active state in response to the first logic level transition in either of the first or second CAS signals;

a first trigger circuit coupled to the first CAS signal, the first trigger circuit producing a first intermediate output signal indicating a second opposite logic level transition in the first CAS signal;

a second trigger circuit coupled to the second CAS signal, the second trigger circuit producing a second intermediate output signal indicating a second opposite logic level transition in the second CAS signal; and

an enable circuit connected to the first and second trigger circuits, and the output circuit, the enable circuit initiated the transition of the output signal to an inactive state when either the first or second intermediate output signals indicate that a second opposite logic level transition occurred.

18. A column address strobe signal detection circuit for use in either a first random access memory having a single column address strobe signal, or a second random access memory having multiple column address strobe signals, the column address signal detection circuit comprising:

a select circuit for receiving an input signal indicating either the first or second random access memory device, and producing an output select signal; and

a generator circuit having first and second operating states and coupled to the select circuit, in the first operating state the generator circuit produces a control signal in response to a single column address strobe signal;

the generator circuit produces a control signal in the second operating state which transitions to an active state in response to a first logic level transition in one of the multiple column address strobe signals and transitions to an in-active state in response to a second logic level transition in one of the multiple of the multiple column address strobe signals.