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Method of etching silicon substrate at different etching rates for different planes of the silicon to form an air bridge

  • US 5,683,546 A
  • Filed: 10/22/1993
  • Issued: 11/04/1997
  • Est. Priority Date: 10/23/1992
  • Status: Expired due to Term
First Claim
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1. A method of etching a silicon substrate, for forming an air bridge by making use of differences in etching rates for respective crystal planes of a silicon substrate, comprising the steps of:

  • forming a mask layer including an air bridge pattern on a (100) plane of the silicon substrate;

    generating isotropic defects in said silicon substrate by electrically irradiating the silicon substrate with ions of an inactive element which is heavier than Si; and

    forming an air bridge by anisotropic etching of the irradiated silicon substrate.

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