Enhanced mobility MOSFET device and method
First Claim
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1. A method for making an enhanced mobility semiconductor device comprising the steps of:
- forming a carrier transport region on a first conductivity type monocrystalline silicon layer, wherein the carrier transport region comprises an alloy of the silicon and a second semiconductor material, and wherein the second semiconductor material is substitutionally present in the carrier transport region lattice sites at an atomic percentage that places the carrier transport region under tensile stress compared to the first conductivity type monocrystalline silicon layer, and wherein the carrier transport region has a bandgap narrower than the monocrystalline silicon layer;
forming an epitaxial semiconductor layer over the carrier transport region;
forming a gate dielectric layer on the epitaxial semiconductor layer above a portion of the carrier transport layer;
forming a control electrode on the gate dielectric layer;
forming a source region of a second conductivity type extending through the epitaxial semiconductor layer at least into the carrier transport region; and
forming a drain region of the second conductivity type extending through the epitaxial semiconductor layer at least into the carrier transport region, wherein the portion of the carrier transport region is between the source region and the drain region.
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Abstract
An enhanced mobility MOSFET device (10) comprises a channel layer (12) formed on a monocrystalline silicon layer (11). The channel layer (12) comprises an alloy of silicon and a second material with the second material substitutionally present in silicon lattice sites at an atomic percentage that places the channel layer (12) under a tensile stress.
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Citations
19 Claims
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1. A method for making an enhanced mobility semiconductor device comprising the steps of:
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forming a carrier transport region on a first conductivity type monocrystalline silicon layer, wherein the carrier transport region comprises an alloy of the silicon and a second semiconductor material, and wherein the second semiconductor material is substitutionally present in the carrier transport region lattice sites at an atomic percentage that places the carrier transport region under tensile stress compared to the first conductivity type monocrystalline silicon layer, and wherein the carrier transport region has a bandgap narrower than the monocrystalline silicon layer; forming an epitaxial semiconductor layer over the carrier transport region; forming a gate dielectric layer on the epitaxial semiconductor layer above a portion of the carrier transport layer; forming a control electrode on the gate dielectric layer; forming a source region of a second conductivity type extending through the epitaxial semiconductor layer at least into the carrier transport region; and forming a drain region of the second conductivity type extending through the epitaxial semiconductor layer at least into the carrier transport region, wherein the portion of the carrier transport region is between the source region and the drain region. - View Dependent Claims (2, 3, 4, 5)
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6. A process for forming an enhanced mobility semiconductor MOSFET structure including the steps of:
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forming a channel layer comprising a Si1-x Cx alloy on a monocrystalline silicon layer of a first conductivity type, wherein carbon is present in the channel layer in substitutional lattice sites so that the channel layer is under tensile stress, and wherein the channel layer has a bandgap narrower than the monocrystalline silicon layer; forming an epitaxial silicon layer on the channel layer; forming a source region of a second conductivity type extending through the epitaxial silicon layer and at least into the channel layer; forming a drain region of the second conductivity type extending through the epitaxial silicon layer and at least into the channel layer, wherein part of the channel layer separates the source region from the drain region; forming a gate dielectric layer on the epitaxial silicon layer between the source region and the drain region; and forming a gate electrode on the gate dielectric layer. - View Dependent Claims (7, 8, 9, 10, 11, 12)
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13. A method for forming an enhanced mobility semiconductor device comprising the steps of:
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providing a monocrystalline silicon layer of a first conductivity type; forming a carrier transport region on the monocrystalline silicon layer, wherein the carrier transport region comprises an alloy of silicon and a second material, and wherein the carrier transport region is under tensile stress, and wherein the carrier transport region has a bandgap narrower than the monocrystalline silicon layer; forming a source region of a second conductivity type extending into the carrier transport region; forming a drain region of the second conductivity type extending into the carrier transport region; and forming an electrically insulated control electrode over the carrier transport region, wherein the control electrode is disposed between the source region and the drain region. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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Specification