Structure for testing integrated circuits
First Claim
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1. An integrated circuit having at least one access pad connected to an element of an internal circuit through a capacitor includinglower conductive plate occupying a capacitor area defined thereby;
- an upper conductive plate occupying the capacitor area;
a first insulation layer disposed between the lower conductive plate and the upper conductive plate;
a second insulation layer disposed on the upper conductive plate and having at least one via defined therein; and
a conductive contact layer disposed on the second insulation layer, occupying the capacitor area and connected to the upper conducting plate through the via defined in the second insulation layer; and
wherein the lower conductive plate is connected to the pad and the upper conductive plate is connected to said element, wherein the conductive contact layer forms a test pad, andwherein the lower conductive plate is made of polycrystalline silicon and wherein the upper conductive plate is further connected to a diffused region beneath the lower conductive plate, the diffused region connected to a portion of a first metallization level.
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Abstract
An integrated circuit has at least one access pad connected to an element of an internal circuit through a capacitor including two opposed conductive layers insulated one from the other. The lower conductive layer portion is connected to the pad and the upper conductive layer portion is connected to the element. Thus, the upper conductive layer portion forms a d.c. current testing pad.
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Citations
2 Claims
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1. An integrated circuit having at least one access pad connected to an element of an internal circuit through a capacitor including
lower conductive plate occupying a capacitor area defined thereby; -
an upper conductive plate occupying the capacitor area; a first insulation layer disposed between the lower conductive plate and the upper conductive plate; a second insulation layer disposed on the upper conductive plate and having at least one via defined therein; and a conductive contact layer disposed on the second insulation layer, occupying the capacitor area and connected to the upper conducting plate through the via defined in the second insulation layer; and
wherein the lower conductive plate is connected to the pad and the upper conductive plate is connected to said element, wherein the conductive contact layer forms a test pad, andwherein the lower conductive plate is made of polycrystalline silicon and wherein the upper conductive plate is further connected to a diffused region beneath the lower conductive plate, the diffused region connected to a portion of a first metallization level. - View Dependent Claims (2)
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Specification