Stacked quantum well aluminum indium gallium nitride light emitting diodes

• US 5,684,309 A
• Filed: 07/11/1996
• Issued: 11/04/1997
• Est. Priority Date: 07/11/1996
• Status: Expired due to Term

• Current Assignee: North Carolina State University (University of North Carolina System)
• Original Assignee: North Carolina State University (University of North Carolina System)
• Inventors: Roberts, John Claassen, El-Masry, Nadia Ahmed, McIntosh, Forrest Gregg, Bedair, Salah Mohamed
• Primary Examiner(s): Thomas, Tom
• Assistant Examiner(s): Hardy, David B.
• Application Number:
  US08/678,346
• Time in Patent Office: 481 Days
• Field of Search: 257/13, 257/191, 257/12, 257/14, 257/79, 257/94, 257/95, 257/96, 257/97, 257/101, 257/103
• US Class Current: 257/191
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

Stacked quantum well light emitting diodes include a plurality of stacked active layers of indium gallium nitride, separated by barrier layers of aluminum gallium nitride or aluminum indium gallium nitride, wherein the ratios of indium to gallium differ in at least two of the stacked active layers. Preferably, the differing ratios of indium to gallium are selected to produce emission wavelengths from the stacked active layers, such that the emission wavelengths are combined to produce white light. Controlled amounts of hydrogen gas are introduced into a reaction chamber during formation of indium gallium nitride or aluminum indium gallium nitride to produce high quality indium gallium nitride or aluminum indium gallium nitride which incorporate large percentages of indium and possesses excellent optical and surface properties.

Claims

1. A quantum well light emitting diode comprising:

a first barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride;

a first active layer comprising indium gallium nitride on said first barrier layer;

a second barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride on said first active layer;

a second active layer comprising indium gallium nitride on said second barrier layer; and

a third barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride on said second active layer;

wherein said first active layer includes a first ratio of indium to gallium and wherein said second active layer includes a second ratio of indium to gallium which is different from said first ratio; and

wherein said first and second ratios are selected to produce corresponding first and second emission wavelengths from said first and second active layers, such that said first and second emission wavelengths combine to produce white light.

2. A light emitting diode according to claim 1 further comprising:

means for biasing said light emitting diode so that said first and second active layers produce corresponding first and second emission intensities and/or wavelengths.

3. A light emitting diode according to claim 1 wherein said first barrier layer is on a substrate.

4. A light emitting diode according to claim 3:

wherein said first active layer has a first ratio of indium to gallium and said second active layer has a second ratio of indium to gallium; and

wherein said first ratio is greater than said second ratio.

5. A light emitting diode according to claim 3 further comprising a buffer layer between said substrate and said first barrier layer.

6. A light emitting diode according to claim 5 further comprising a first cladding layer between said buffer layer and said first barrier layer.

7. A light emitting diode according to claim 6 further comprising a second cladding layer on said third barrier layer.

8. A quantum well light emitting diode comprising:

a first barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride;

a first active layer comprising indium gallium nitride on said first barrier layer;

a second barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitrode on said first active layer;

a second active layer comprising indium gallium nitride on said second barrier layer; and

a third barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride on said second active layer;

a third active layer comprising indium gallium nitride or aluminum gallium nitride on said second active layer;

a third active layer comprising indium gallium nitride on said third barrier layer; and

a fourth barrier layer comprising aluminum nitride on said third barrier layer; and

a fourth barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride on said third active layer;

wherein said first active layer includes a firs ratio of indium to gallium, wherein said second active layer includes a second ratio of indium to gallium, and wherein said third active layer includes a third ratio of indium to gallium, said first, second and third ratios being different from one another; and

wherein said first, second and third ratios are selected to produce corresponding first, second and third emission wavelengths from said first, second and third active layers, such that said first, second and third emission wavelengths combine to produce white light.

9. A light emitting diode according to claim 8 further comprising:

means for biasing said light emitting diode so that said first, second and third active layers produce corresponding first, second and third emission intensities or wavelengths.

10. A light emitting diode according to claim 8 wherein said first barrier layer is on a substrate.

11. A light emitting diode according to claim 10 wherein said first barrier layer is doped a first conductivity type and wherein said fourth barrier layer is doped a second conductivity type.

12. A light emitting diode according to claim 10:

wherein said first active layer has a first ratio of indium to gallium, said second active layer has a second ratio of indium to gallium and said third active layer has a third ratio of indium to gallium; and

wherein said first ratio is greater than said second ratio, and said second ratio is greater than said third ratio.

13. A light emitting diode according to claim 10 further comprising a buffer layer between said substrate and said first barrier layer.

14. A light emitting diode according to claim 13 further comprising a first cladding layer between said buffer layer and said first barrier layer.

15. A light emitting diode according to claim 14 further comprising a second cladding layer on said fourth barrier layer.

16. A quantum well light emitting diode comprising:

a first barrier layer comprising aluminum indium gallium nitrode or aluminum gallium nitrode;

a first active layer comprising indium gallium nitride on said first barrier layer;

a second barrier layer comprising aluminum indium gallium nitrode or aluminum gallium nitride on said first active layer;

a second active layer comprising indium gallium nitride on said second barrier layer;

a third barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride on said second active layer;

wherein said first active layer includes a first ratio of indium to gallium and wherein said second active layer includes a second ratio of indium to gallium which is different from said first ratio; and

means for individually biasing said first and second active layers so that said first and second active layers produce corresponding first and second emission intensities or wavelengths which vary as a function of the individual bias on the first and second active layers.

17. A quantum well light emitting diode comprising:

a first barrier layer comprising aluminum indium gallium nitrode or aluminum gallium nitrode;

a first active layer comprising indium gallium nitride on said first barrier layer;

a second barrier layer comprising aluminum indium gallium nitrode or aluminum gallium nitrode on said first active layer;

a second active layer comprising indium gallium nitride on said second barrier layer; and

a third barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride on said second active layer;

a third active layer comprising indium gallium nitride on said third barrier layer; and

a fourth barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride on said third active layer;

wherein said first active layer includes a first ratio of indium to gallium, wherein said second active layer includes a second ratio of indium to gallium, and wherein said third active layer includes a third ratio of indium to gallium, said first, second and third ratios being different from one another; and

means for individually biasing said first, second and third active layers so that said first, second and third active layers produce corresponding first, second and third emission intensities or wavelengths which vary as a function of the individual bias on the first, second and third active layers.

18. A quantum well light emitting diode comprising:

a first barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitrode;

a first active layer comprising indium gallium nitride on said first barrier layer;

a second barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride on said first active layer;

a second active layer comprising indium gallium nitride on said second barrier layer; and

a third barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride on said second active layer;

wherein said first active layer includes a first ratio of indium to gallium and wherein said second active layer includes a second ratio of indium to gallium which is different from said first ratio;

wherein said first barrier layer is on a substrate; and

wherein said first barrier layer is doped a first conductivity type and wherein said third barrier layer is doped a second conductivity type.

19. A quantum well light emitting diode comprising:

a plurality of stacked active layers of indium gallium nitride, separated by barrier layers of aluminum indium gallium nitride or aluminum gallium nitride, wherein ratios of indium to gallium differ in at least two of said stacked active layers;

wherein the differing ratios of indium to gallium are selected to produce emission wavelengths from the stacked active layers, such that said emission wavelengths combine to produce white light.

20. A light emitting diode according to claim 19 further comprising:

means for biasing said light emitting diode so that said stacked active layers emit light.

21. A light emitting diode according to claim 19 further comprising:

means for individually biasing at least one of said stacked active layers so that the at least one of said stacked active layers emit light at intensities or wavelengths which vary as a function of the individual bias on the at least one of the stacked active layers.

22. A light emitting diode according to claim 19 wherein said plurality of stacked active layers of indium gallium nitride, separated by barrier layers of aluminum indium gallium nitride or aluminum gallium nitride are on a substrate.

23. A light emitting diode according to claim 22 further comprising a buffer layer between said substrate and said plurality of stacked active layers of indium gallium nitride, separated by barrier layers of aluminum indium gallium nitride or aluminum gallium nitride.

24. A light emitting diode according to claim 23 further comprising a cladding layer between said substrate and said plurality of stacked active layers of indium gallium nitride, separated by barrier layers of aluminum indium gallium nitride or aluminum gallium nitride.

25. A quantum well light emitting diode comprising:

a plurality of stacked active layers of indium gallium nitride, separated by barrier layers of aluminum indium gallium nitride or aluminum gallium nitride, wherein ratios of indium to gallium differ in at least two of said stacked active layers;

wherein said plurality of stacked active layers of indium gallium nitride separated by barrier layers of aluminum indium gallium nitride or aluminum gallium nitride, define first and second outer barrier layers; and

wherein one of the outer barrier layers is doped a first conductivity type and the other of said outer barrier layers is doped a second conductivity type.

26. A quantum well light emitting diode comprising:

a plurality of stacked active layers of indium gallium nitride, separated by barrier layers of aluminum indium gallium nitride or aluminum gallium nitride, wherein ratios of indium to gallium differ in at least two of said stacked active layers;

wherein said plurality of stacked active layers of indium gallium nitride, separated by barrier layers of aluminum indium gallium nitride or aluminum gallium nitride are on a substrate; and

wherein at least two of said plurality of stacked active layers of indium gallium nitride, separated by barrier layers of aluminum indium gallium nitride or aluminum gallium nitride, have decreasing ratios of indium to gallium from adjacent said substrate to opposite said substrate.