Stacked quantum well aluminum indium gallium nitride light emitting diodes
First Claim
1. A quantum well light emitting diode comprising:
- a first barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride;
a first active layer comprising indium gallium nitride on said first barrier layer;
a second barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride on said first active layer;
a second active layer comprising indium gallium nitride on said second barrier layer; and
a third barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride on said second active layer;
wherein said first active layer includes a first ratio of indium to gallium and wherein said second active layer includes a second ratio of indium to gallium which is different from said first ratio; and
wherein said first and second ratios are selected to produce corresponding first and second emission wavelengths from said first and second active layers, such that said first and second emission wavelengths combine to produce white light.
2 Assignments
0 Petitions
Accused Products
Abstract
Stacked quantum well light emitting diodes include a plurality of stacked active layers of indium gallium nitride, separated by barrier layers of aluminum gallium nitride or aluminum indium gallium nitride, wherein the ratios of indium to gallium differ in at least two of the stacked active layers. Preferably, the differing ratios of indium to gallium are selected to produce emission wavelengths from the stacked active layers, such that the emission wavelengths are combined to produce white light. Controlled amounts of hydrogen gas are introduced into a reaction chamber during formation of indium gallium nitride or aluminum indium gallium nitride to produce high quality indium gallium nitride or aluminum indium gallium nitride which incorporate large percentages of indium and possesses excellent optical and surface properties.
-
Citations
26 Claims
-
1. A quantum well light emitting diode comprising:
-
a first barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride; a first active layer comprising indium gallium nitride on said first barrier layer; a second barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride on said first active layer; a second active layer comprising indium gallium nitride on said second barrier layer; and a third barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride on said second active layer; wherein said first active layer includes a first ratio of indium to gallium and wherein said second active layer includes a second ratio of indium to gallium which is different from said first ratio; and wherein said first and second ratios are selected to produce corresponding first and second emission wavelengths from said first and second active layers, such that said first and second emission wavelengths combine to produce white light. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A quantum well light emitting diode comprising:
-
a first barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride; a first active layer comprising indium gallium nitride on said first barrier layer; a second barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitrode on said first active layer; a second active layer comprising indium gallium nitride on said second barrier layer; and a third barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride on said second active layer; a third active layer comprising indium gallium nitride or aluminum gallium nitride on said second active layer; a third active layer comprising indium gallium nitride on said third barrier layer; and a fourth barrier layer comprising aluminum nitride on said third barrier layer; and a fourth barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride on said third active layer; wherein said first active layer includes a firs ratio of indium to gallium, wherein said second active layer includes a second ratio of indium to gallium, and wherein said third active layer includes a third ratio of indium to gallium, said first, second and third ratios being different from one another; and wherein said first, second and third ratios are selected to produce corresponding first, second and third emission wavelengths from said first, second and third active layers, such that said first, second and third emission wavelengths combine to produce white light. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
-
-
16. A quantum well light emitting diode comprising:
-
a first barrier layer comprising aluminum indium gallium nitrode or aluminum gallium nitrode; a first active layer comprising indium gallium nitride on said first barrier layer; a second barrier layer comprising aluminum indium gallium nitrode or aluminum gallium nitride on said first active layer; a second active layer comprising indium gallium nitride on said second barrier layer; a third barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride on said second active layer; wherein said first active layer includes a first ratio of indium to gallium and wherein said second active layer includes a second ratio of indium to gallium which is different from said first ratio; and means for individually biasing said first and second active layers so that said first and second active layers produce corresponding first and second emission intensities or wavelengths which vary as a function of the individual bias on the first and second active layers.
-
-
17. A quantum well light emitting diode comprising:
-
a first barrier layer comprising aluminum indium gallium nitrode or aluminum gallium nitrode; a first active layer comprising indium gallium nitride on said first barrier layer; a second barrier layer comprising aluminum indium gallium nitrode or aluminum gallium nitrode on said first active layer; a second active layer comprising indium gallium nitride on said second barrier layer; and a third barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride on said second active layer; a third active layer comprising indium gallium nitride on said third barrier layer; and a fourth barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride on said third active layer; wherein said first active layer includes a first ratio of indium to gallium, wherein said second active layer includes a second ratio of indium to gallium, and wherein said third active layer includes a third ratio of indium to gallium, said first, second and third ratios being different from one another; and means for individually biasing said first, second and third active layers so that said first, second and third active layers produce corresponding first, second and third emission intensities or wavelengths which vary as a function of the individual bias on the first, second and third active layers.
-
-
18. A quantum well light emitting diode comprising:
-
a first barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitrode; a first active layer comprising indium gallium nitride on said first barrier layer; a second barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride on said first active layer; a second active layer comprising indium gallium nitride on said second barrier layer; and a third barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride on said second active layer; wherein said first active layer includes a first ratio of indium to gallium and wherein said second active layer includes a second ratio of indium to gallium which is different from said first ratio; wherein said first barrier layer is on a substrate; and wherein said first barrier layer is doped a first conductivity type and wherein said third barrier layer is doped a second conductivity type.
-
-
19. A quantum well light emitting diode comprising:
-
a plurality of stacked active layers of indium gallium nitride, separated by barrier layers of aluminum indium gallium nitride or aluminum gallium nitride, wherein ratios of indium to gallium differ in at least two of said stacked active layers; wherein the differing ratios of indium to gallium are selected to produce emission wavelengths from the stacked active layers, such that said emission wavelengths combine to produce white light. - View Dependent Claims (20, 21, 22, 23, 24)
-
-
25. A quantum well light emitting diode comprising:
-
a plurality of stacked active layers of indium gallium nitride, separated by barrier layers of aluminum indium gallium nitride or aluminum gallium nitride, wherein ratios of indium to gallium differ in at least two of said stacked active layers; wherein said plurality of stacked active layers of indium gallium nitride separated by barrier layers of aluminum indium gallium nitride or aluminum gallium nitride, define first and second outer barrier layers; and wherein one of the outer barrier layers is doped a first conductivity type and the other of said outer barrier layers is doped a second conductivity type.
-
-
26. A quantum well light emitting diode comprising:
-
a plurality of stacked active layers of indium gallium nitride, separated by barrier layers of aluminum indium gallium nitride or aluminum gallium nitride, wherein ratios of indium to gallium differ in at least two of said stacked active layers; wherein said plurality of stacked active layers of indium gallium nitride, separated by barrier layers of aluminum indium gallium nitride or aluminum gallium nitride are on a substrate; and wherein at least two of said plurality of stacked active layers of indium gallium nitride, separated by barrier layers of aluminum indium gallium nitride or aluminum gallium nitride, have decreasing ratios of indium to gallium from adjacent said substrate to opposite said substrate.
-
Specification