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Stacked quantum well aluminum indium gallium nitride light emitting diodes

  • US 5,684,309 A
  • Filed: 07/11/1996
  • Issued: 11/04/1997
  • Est. Priority Date: 07/11/1996
  • Status: Expired due to Term
First Claim
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1. A quantum well light emitting diode comprising:

  • a first barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride;

    a first active layer comprising indium gallium nitride on said first barrier layer;

    a second barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride on said first active layer;

    a second active layer comprising indium gallium nitride on said second barrier layer; and

    a third barrier layer comprising aluminum indium gallium nitride or aluminum gallium nitride on said second active layer;

    wherein said first active layer includes a first ratio of indium to gallium and wherein said second active layer includes a second ratio of indium to gallium which is different from said first ratio; and

    wherein said first and second ratios are selected to produce corresponding first and second emission wavelengths from said first and second active layers, such that said first and second emission wavelengths combine to produce white light.

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