Synchronous data transfer system

• US 5,684,753 A
• Filed: 06/07/1995
• Issued: 11/04/1997
• Est. Priority Date: 12/23/1987
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Hashimoto, Masashi, Frantz, Gene A., Dolait, Jean-Pierre, Moravec, John Victor
• Primary Examiner(s): Popek, Joseph A.
• Application Number:
  US08/479,297
• Time in Patent Office: 881 Days
• Field of Search: 365/219, 365/220, 365/221, 365/236, 365/239, 365/240, 365/230.09, 365/233
• US Class Current: 365/233.1
• CPC Class Codes: G09G 5/391 Resolution modifying circuits, e.g. variable screen formats
• CPC Class Codes: G11C 7/103 using serially addressed read-write data registers G11C7/1036 takes precedence
• CPC Class Codes: G11C 7/1036 using data shift registers
• CPC Class Codes: G11C 7/1072 for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
• CPC Class Codes: G11C 7/1075 for multiport memories each having random access ports and serial ports, e.g. video RAM
• CPC Class Codes: H04B 7/18502 Airborne stations

Abstract

A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disclosed. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data ports (22) thereof to permit asynchronious read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).

Claims

1. A synchronous data transfer system comprising:

A. a processor that includes an address port, the address port including a certain number of plural address terminals sending parallel address signals to external the processor, the address signals occurring in plural groups separated in time, the address signals indicating an address of a random location in memory; and

B. a dynamic random access memory device including;

i. a single chip integrated circuit;

ii. a dynamic random access memory array formed on the chip, the array including plural array data leads carrying parallel data signals to the array and parallel array address leads carrying parallel address signals to the array, one data signal representing one data bit and one address signal representing one address bit, the array being organized in plural addressable locations with each location containing one data word of plural data bits and each location being randomly addressable by the address signals for writing of one word of data bits from the array data leads to each addressed location;

iii. a clock signal terminal formed on the chip for receiving a clock signal formed of rising and falling edges regularly spaced in time, the clock signal being continuous during operation of the device;

iv. an address port formed on the chip, the address port including the certain number of plural address terminals coupled to the certain number of plural address terminals of the processor and receiving parallel address signals from the processor, the received address signals occurring in plural groups separated in time and being received at the same time is the clock terminal receives the continuous clock signal, the received address signals indicating an address of a random location in the array, the address port including plural registers each latching a fixed number of address bits equal to the certain number of plural address terminals;

v. an address sequencer coupled between at least one of the plural registers and the array address leads and coupled to the clock signal terminal, the address sequencer receiving the address signals from the at least one plural register and providing address signals to the array address leads to access addressable locations in the array, the address sequencer sequencing through addresses starting from the address of the random location in the array received from the at least one plural register; and

vi. a data port formed on the chip and connecting with the array data leads and the clock signal terminal, the data port including;

a. plural data terminals for receiving parallel data signals synchronous with the clock signal, each set of parallel data signals representing one data word; and

b. at least a write serial latch serially connected between the data terminals and the array data leads, the at least a write serial latch serially latching the data word signals received at the data terminals synchronous with the clock signal and carrying the received data signals to the array data leads for writing the data signals in the array at the random location indicated by the received address signals.

2. The system of claim 1 in which the certain number of plural address terminals is eight and the data port includes four data terminals and a register connected between the write serial latch and the array data leads.

3. The system of claim 1 in which the address sequencer is a binary counter that can be preset to the address contained in the plural registers.

4. The system of claim 1 in which the address sequencer is a binary counter that contains half the address bits needed to address the array and that can be initialized to a cleared state.

5. The system of claim 1 including a read clock terminal on the memory device chip receiving a read clock, and an output data port on the memory device chip coupled to the array for reading data from the array synchronous with the read clock, and a display coupled to the memory device for producing pixels on the display in response to the data read from the array.

6. The system of claim 1 in which the memory device includes a control strobe terminal receiving a control strobe signal at the same time as the clock signal terminal receives the clock signal and activated at the same time as valid address signals occur at the address terminals.

7. The system of claim 1 in which the memory device includes a control strobe terminal receiving a control strobe signal at the same time as the clock signal terminal receives the clock signal and activated at the same time as valid address signals occur at the address terminals and the rate of the control strobe signal being different from the rate of the clock signal applied to the clock signal terminal.

8. The system of claim 1 in which the memory device address terminals are separate from the data terminals.

9. The system of claim 1 including a refresh circuit coupled to the memory array.

10. The memory device of claim 1 in which the address sequencer sequences through addresses synchronous with the continuous clock signal.