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Semiconductor laser having a structure of photonic bandgap material

  • US 5,684,817 A
  • Filed: 05/01/1996
  • Issued: 11/04/1997
  • Est. Priority Date: 05/12/1995
  • Status: Expired due to Term
First Claim
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1. A semiconductor laser comprising at least one active layer sandwiched between two confinement layers, namely one layer with P doping and one layer with N doping, to form a PN junction, wherein said laser comprises, in at least one of the confinement layers and/or the active layer, holes positioned on each side of the cavity so that structures of photonic bandgap material are made along the lateral walls of the cavity and at two ends of the cavity.

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