Semiconductor laser having a structure of photonic bandgap material

• US 5,684,817 A
• Filed: 05/01/1996
• Issued: 11/04/1997
• Est. Priority Date: 05/12/1995
• Status: Expired due to Term

• Current Assignee: Thomson-CSF (Thales SA)
• Original Assignee: Thomson-CSF (Thales SA)
• Inventors: Berger, Vincent, Houdre, Romuald, Weisbuch, Claude
• Primary Examiner(s): Bovernick, Rodney B.
• Assistant Examiner(s): KIM, ELLEN E
• Application Number:
  US08/640,525
• Time in Patent Office: 552 Days
• Field of Search: 372/45, 372/46, 372/96, 372/92, 372/50, 372/99
• US Class Current: 372/45.01
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 6/1225 comprising photonic band-gap structures or photonic lattices
• CPC Class Codes: H01S 5/1028 Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
• CPC Class Codes: H01S 5/11 Comprising a photonic bandgap structure
• CPC Class Codes: H01S 5/125 Distributed Bragg reflector [DBR] lasers
• CPC Class Codes: H01S 5/4031 Edge-emitting structures

Abstract

Disclosed is a semiconductor laser that is constituted by at least one active layer sandwiched between two confinement layers with P and N type doping to constitute a PN junction. In at least one of the confinement layers and/or the active layer, holes are designed on each side of the cavity so as to form structures of photonic bandgap material along the lateral walls of the cavity and the ends of the cavity.

Claims

1. A semiconductor laser comprising at least one active layer sandwiched between two confinement layers, namely one layer with P doping and one layer with N doping, to form a PN junction, wherein said laser comprises, in at least one of the confinement layers and/or the active layer, holes positioned on each side of the cavity so that structures of photonic bandgap material are made along the lateral walls of the cavity and at two ends of the cavity.

2. A semiconductor laser according to claim 1, comprising a diffraction grating positioned perpendicularly to the longitudinal direction of the cavity, this grating being positioned on the output end side of the laser.

3. A semiconductor laser according to claim 1, wherein the depth of the holes in the confinement layer is such that the distance from the bottom of the holes to the active layer is smaller than the operating length λ

of the laser.

4. A semiconductor laser according to claim 1, wherein the number of periods of holes is smaller at one end than at the other end.

5. A semiconductor laser according to claim 1, wherein the holes and the different meshes of the photonic bandgap material have dimensions such that the holes fill up 10% to 90% of the surface of the material.

6. A semiconductor laser according to claim 5, wherein the holes fill about 70% of the surface of the material.

7. A semiconductor laser according to claim 5, wherein the distance between holes ranges substantially from 0.2 λ

to 0.5 λ

, λ

being the wavelength of operation of the laser.

8. A semiconductor laser according to claim 2, comprising several parallel-connected lasers.

9. A semiconductor laser according to claim 8, comprising a diffraction grating common to all the lasers.

10. A semiconductor laser according to claim 8, wherein the width of photonic bandgap material between two lasers corresponds substantially to 1 to 5 meshes of the network of the photonic bandgap material to enable a coupling between lasers.

11. A semiconductor laser according to claim 1, wherein the holes are void of material.