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Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices

  • US 5,685,946 A
  • Filed: 02/15/1995
  • Issued: 11/11/1997
  • Est. Priority Date: 08/11/1993
  • Status: Expired due to Fees
First Claim
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1. A process for forming a monocrystalline silicon lattice having a high crystalline quality and having an embedded porous germanium-containing layer comprising:

  • a. epitaxially forming a thin monocrystalline silicon-germanium layer on a first monocrystalline silicon layer;

    b. epitaxially forming a second monocrystalline silicon layer on the monocrystalline silicon-germanium layer;

    c. patterning the epitaxially formed monocrystalline silicon-germanium layer into mesa structures; and

    thereafterd. transforming the monocrystalline silicon-germanium layer by etching for a period of time under conditions and with an etchant operable for total porosification of the silicon-germanium layer but inoperable for porosification of more than a non-deleterious amount of the monocrystalline silicon layers, into a monocrystalline silicon lattice having a high crystalline quality and having an embedded porous germanium-containing layer.

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