Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices
First Claim
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1. A process for forming a monocrystalline silicon lattice having a high crystalline quality and having an embedded porous germanium-containing layer comprising:
- a. epitaxially forming a thin monocrystalline silicon-germanium layer on a first monocrystalline silicon layer;
b. epitaxially forming a second monocrystalline silicon layer on the monocrystalline silicon-germanium layer;
c. patterning the epitaxially formed monocrystalline silicon-germanium layer into mesa structures; and
thereafterd. transforming the monocrystalline silicon-germanium layer by etching for a period of time under conditions and with an etchant operable for total porosification of the silicon-germanium layer but inoperable for porosification of more than a non-deleterious amount of the monocrystalline silicon layers, into a monocrystalline silicon lattice having a high crystalline quality and having an embedded porous germanium-containing layer.
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Abstract
Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si--Ge layers followed by patterning into mesa structures. The mesa structures are stain etched resulting in porosification of the Si--Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si--Ge layers produced in a similar manner emitted visible light at room temperature.
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Citations
33 Claims
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1. A process for forming a monocrystalline silicon lattice having a high crystalline quality and having an embedded porous germanium-containing layer comprising:
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a. epitaxially forming a thin monocrystalline silicon-germanium layer on a first monocrystalline silicon layer; b. epitaxially forming a second monocrystalline silicon layer on the monocrystalline silicon-germanium layer; c. patterning the epitaxially formed monocrystalline silicon-germanium layer into mesa structures; and
thereafterd. transforming the monocrystalline silicon-germanium layer by etching for a period of time under conditions and with an etchant operable for total porosification of the silicon-germanium layer but inoperable for porosification of more than a non-deleterious amount of the monocrystalline silicon layers, into a monocrystalline silicon lattice having a high crystalline quality and having an embedded porous germanium-containing layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A process for forming a monocrystalline silicon lattice having a high crystalline quality and having embedded porous germanium-containing layers comprising:
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a. epitaxially forming a thin first monocrystalline silicon-germanium layer on a first monocrystalline silicon layer; b. epitaxially forming a second monocrystalline silicon layer on the first monocrystalline silicon-germanium layer; c. epitaxially forming another monocrystalline silicon-germanium layer on the last-mentioned monocrystalline silicon layer; d. epitaxially forming another monocrystalline silicon layer on the last-mentioned monocrystalline silicon-germanium layer;
thereaftere. patterning the epitaxially formed monocrystalline silicon-germanium layers into mesa structures; and
thereafterf. transforming the monocrystalline silicon-germanium layers by etching for a period of time under conditions and with an etchant operable for total porosification of the silicon-germanium layers but inoperable for porosification of more than a non-deleterious amount of the monocrystalline silicon layers, into a monocrystalline silicon lattice having a high crystalline quality and having embedded porous germanium-containing layers. - View Dependent Claims (26, 27)
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28. A process for forming a monocrystalline semiconductor first element lattice having a high crystalline quality and having an embedded porous semiconductor second element-containing layer comprising:
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a. epitaxially forming a thin monocrystalline semiconductor-alloy layer of an alloy composition having a substantial amount of a first element and a substantial amount of a second element, on a first monocrystalline semiconductor layer of a first composition having a substantial amount of the first element, the alloy composition being atomically different than the first composition; b. epitaxially forming a second monocrystalline semiconductor layer of the first composition, on the monocrystalline semiconductor-alloy layer; c. patterning the epitaxially formed monocrystalline semiconductor-alloy layer into mesa structures; and
thereafterd. transforming the monocrystalline semiconductor-alloy layer by etching for a period of time under conditions and with an etchant operable for total porosification of the semiconductor-alloy layers but inoperable for porosification of more than a non-deleterious amount of the monocrystalline semiconductor layers, into a monocrystalline semiconductor first element lattice having a high crystalline quality and having an embedded porous second element-containing layer. - View Dependent Claims (29, 30, 31, 32, 33)
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Specification