Chemical-mechanical polishing with an embedded abrasive

• US 5,685,947 A
• Filed: 08/03/1995
• Issued: 11/11/1997
• Est. Priority Date: 08/03/1995
• Status: Expired due to Term

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Tseng, Huan Chi, Chao, Ying-Chen
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): ADJODHA, MICHAEL
• Application Number:
  US08/510,827
• Time in Patent Office: 831 Days
• Field of Search: 156/636.1, 156/642.1, 156/645.1, 216/88, 216/89, 437/225, 451/41
• US Class Current: 438/692
• CPC Class Codes: B24B 37/04 designed for working plane surfaces
• CPC Class Codes: B24B 57/02 for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step

Abstract

A chemical-mechanical polishing process is described that provides high etch rates while at the same time minimizing the consumption of abrasives. This is achieved by embedding and dispersing the abrasive within the body of the material that is to be subjected to chemical-mechanical polishing.

Claims

1. A process for chemical-mechanical polishing comprising:

providing a substrate;

coating said substrate with a layer of a dielectric material that includes an abrasive powder embedded and dispersed therein;

providing a grinding pad;

providing a polish solvent;

dispensing said polish solvent so that it flows between said substrate and said grinding pad; and

pressing the coated surface of said substrate against the surface of said grinding pad while at the same time rotating said substrate relative to said grinding pad.

2. The process of claim 1 wherein said abrasive powder is taken from the group consisting of cabosil, fused silica, and airborne silica particles and has a particle size that is less than about 3×

10^-2 micron.

4. The process of claim 1 wherein said grinding pad and said substrate rotate about independent axes.

5. The process of claim 1 wherein said substrate is a semiconductor wafer comprising an integrated circuit.

6. The process of claim 1 wherein said abrasive powder is dispersed within said material prior to the application of said material to said substrate.

7. The process of claim 1 wherein said abrasive dispersed within said material at the same time that said powder is material is applied to said substrate.

8. The process of claim 1 wherein said layer of a dielectric material is a Spin-on-Glass or Oxide deposited through Atmospheric Pressure Chemical Vapor Deposition.

3. The process of claim I wherein said polish solvent is taken from the group consisting of diluted Rippey'"'"'s SC-1, Rippey'"'"'s SS-25, and ILD-1300.

9. A method for planarizing the surface of a semiconductor integrated circuit comprising:

coating the surface of said integrated circuit with a layer of a dielectric material that includes an abrasive powder embedded and dispersed therein;

providing a grinding pad;

providing a polish solvent;

dispensing said polish solvent so that it flows between said integrated circuit and said grinding pad;

pressing the coated surface of said integrated circuit against the surface of said grinding pad while at the same time rotating said integrated circuit relative to said grinding pad, thereby gradually etching away said dielectric layer; and

continuing said etching until said dielectric layer has been removed, including said imbedded abrasive powder.

10. The method of claim 9 wherein said abrasive powder is taken from the group consisting of cabosil, fused silica, and airborne silica particles and has a particle size that is less than about 3×

10^-2 micron.

11. The method of claim 9 wherein said polish solvent is taken from the group consisting of diluted Rippey'"'"'s SC-1, Rippey'"'"'s SS-25, and ILD-1300.

12. The method of claim 9 wherein said dielectric is a Spin-on-Glass or Oxide deposited through Atmospheric Pressure Chemical Vapor Deposition.

13. The method of claim 9 further comprising:

adding abrasive powder to said dispensed polish solvent when the etch rate falls below a value between about 800 and 1,000 Angstrom units per minute.