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Dry etching method

  • US 5,685,950 A
  • Filed: 07/15/1996
  • Issued: 11/11/1997
  • Est. Priority Date: 12/29/1993
  • Status: Expired due to Fees
First Claim
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1. A method for dry etching of a layer of silicon-based material on a substrate comprising the steps of:

  • forming a mask layer on the layer of the silicon-based material for exposing an area to be etched;

    etching the exposed area by providing an etching gas consisting of a bromine-based gas, an oxygen-based gas and a rare gas with a rate of flow of the rare gas being more than a rate of flow of the bromine-based gas, creating an ECR plasma with the etching gas under a gas pressure of 1.3 to 13.3 Pa to etch the exposed area while depositing a deposit composed mainly of silicon bromide on sidewalls created by the etching and controlling the amount of oxygen-based gas to limit the amount of oxygen in the deposit, and thenremoving the deposit on the sidewalls with a fluorine plasma process.

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