Temperature detector on an integrated circuit

• US 5,686,858 A
• Filed: 08/30/1995
• Issued: 11/11/1997
• Est. Priority Date: 08/31/1994
• Status: Expired due to Term

• Current Assignee: SGS-Thomson Microelectronics (STMicroelectronics NV)
• Original Assignee: SGS-Thomson Microelectronics (STMicroelectronics NV)
• Inventors: Malherbe, Alexandre
• Primary Examiner(s): Callahan, Timothy P.
• Assistant Examiner(s): KIM, JUNG H
• Application Number:
  US08/521,019
• Time in Patent Office: 804 Days
• Field of Search: 327/512, 327/513, 327/546, 327/378, 327/539, 323/313, 323/315
• US Class Current: 327/512
• CPC Class Codes: G01K 3/005 Circuits arrangements for indicating a predetermined temperature fire detection G08B17/00
• CPC Class Codes: G01K 7/01 using semiconducting elements having PN junctions G01K7/02, G01K7/16, G01K7/30 take precedence
• CPC Class Codes: H02H 5/044 using a semiconductor device to sense the temperature

Abstract

An integrated circuit including a temperature threshold detector. This detector includes two MOS transistors with a same type of conductivity, circuitry for applying to the second transistor a gate-source voltage higher than the gate-source voltage of the first transistor by a value Vbe, VbE being the drop in voltage at the terminals of a forward-biased PN junction, and a comparator for comparing the currents flowing in the two transistors. The current in the second transistor diminishes faster than the current in the first transistor. If the dimensions of the transistors are accurately chosen, the curves pertaining to the diminishing of current (or curves deduced from these curves by homothetic transformation) intersect one another for a certain temperature. The detection of equality of the currents therefore enables a detection of the passage through this temperature.

Claims

1. An integrated circuit with temperature threshold detector, comprising two MOS transistors with a same type of conductivity, means for applying to the second transistor a gate-source voltage higher than the gate-source voltage of the first transistor by a value Vbe, Vbe being a drop in voltage at terminals of a forward-biased PN junction, and means for comparing currents flowing in the two transistors.

2. An integrated circuit according to claim 1, wherein the second transistor has a source that is connected directly to a supply terminal and the first transistor has a source that series-connected to this same terminal by means of the PN junction.

3. An integrated circuit according to claim 1, wherein the means for comparing comprises a means for copying the current flowing in one of the transistors, the means for copying being series-connected with the second transistor.

4. An integrated circuit according to claim 3, comprising a first current source series-connected with the first transistor to provide a determined current in the first transistor, and wherein the means for copying copies the current in the first source with a fixed proportionality factor.

5. An integrated circuit according to claim 4, wherein the second current source is series-connected with a drain of the second transistor.

6. An integrated circuit according to claim 5, wherein the second current source comprises an additional transistor of a type opposite that of the first and second transistors, the additional transistor having a drain connected to the drain of the second transistor and a source connected to ground, and wherein the output of the detector is taken at a junction point of the drains of the second transistor and of the additional transistor.

7. An integrated circuit according to claim 1, made in CMOS technology with wells having a type of conductivity opposite that of the substrate, wherein the PN junction is formed firstly by a well connected to a source of the first transistor and, secondly, by a surface diffusion that is formed in the well and is of a type opposite that of the well, this diffusion being connected to a supply terminal.

8. A method of protecting an integrated circuit against fraud perpetrated by raising the integrated circuit to a temperature at which abnormal operation occurs, comprising steps of:

applying a first gate-source voltage to a first MOS transistor, thereby causing first drain current to flow;

applying a second gate-source voltage lower than the first gate-source voltage by an amount equal to a voltage across a forward biased PN junction to a second MOS transistor, thereby causing a second drain current to flow;

comparing the currents flowing in the two transistors; and

responsive to the step of comparing, inhibiting operation of the integrated circuit.

9. The method of protecting an integrated circuit against fraud of claim 8, further comprising a step of:

providing a determined current in the second transistor by means of a first current source series connected with the drain of the second transistor; and

copying the determined current with a fixed proportionality factor in a second current source series connected with the drain of the first transistor;

the step of comparing including a step of measuring a voltage at the drain of the first MOS transistor.

10. A temperature threshold detector formed on an integrated circuit, comprising:

two MOS transistors with a same type of conductivity means for applying to the second transistor a gate-source voltage higher than the gate-source voltage of the first transistor by a value Vbe, Vbe being a drop in voltage at terminals of a forward-biased PN junction, and means for, comparing the currents in the two transistors, thereby determining whether the temperature is above or below a threshold temperature.

11. The temperature threshold detector of claim 10, further comprising:

a first current source to provide a determined current in the first transistor, and

a second current source series connected with the drain of the second transistor, to copy the determined current of said first current source with a fixed proportionality factor,

the second current to follow the first current whereby an output voltage at the drain of said second transistor indicates whether the threshold temperature is exceeded.

12. The temperature threshold detector of claim 11, wherein the forward-biased PN junction is an emitter-base junction of a junction transistor that includes a collector connected to a circuit reference voltage.