Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell

• US 5,687,114 A
• Filed: 10/06/1995
• Issued: 11/11/1997
• Est. Priority Date: 10/06/1995
• Status: Expired due to Term

• Current Assignee: Silicon Storage Technology Incorporated (Microchip Technology Incorporated)
• Original Assignee: Agate Semiconductor, Inc. (Microchip Technology Incorporated)
• Inventors: Khan, Sakhawat M.
• Primary Examiner(s): Nelms, David C.
• Assistant Examiner(s): TRAN, MICHAEL THANH
• Application Number:
  US08/540,117
• Time in Patent Office: 767 Days
• Field of Search: 365/230.03, 365/233, 365/185.03, 365/189.05, 365/185.19, 365/185.2, 365/185.21, 365/185.22, 365/168
• US Class Current: 365/185.03
• CPC Class Codes: G11C 11/5621 using charge storage in a floating gate
• CPC Class Codes: G11C 11/5628 Programming or writing circuits; Data input circuits
• CPC Class Codes: G11C 11/5642 Sensing or reading circuits; Data output circuits
• CPC Class Codes: G11C 16/28 using differential sensing or reference cells, e.g. dummy cells
• CPC Class Codes: G11C 19/00 Digital stores in which the information is moved stepwise, e.g. shift registers
• CPC Class Codes: G11C 2211/5624 Concurrent multilevel programming and programming verification
• CPC Class Codes: G11C 2211/5632 Multilevel reading using successive approximation
• CPC Class Codes: G11C 2211/5634 Reference cells
• CPC Class Codes: G11C 2211/5642 Multilevel memory with buffers, latches, registers at input or output
• CPC Class Codes: G11C 2211/5644 Multilevel memory comprising counting devices
• CPC Class Codes: G11C 29/00 Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
• CPC Class Codes: G11C 8/04 using a sequential addressing device, e.g. shift register, counter
• CPC Class Codes: G11C 8/12 Group selection circuits, e.g. for memory block selection, chip selection, array selection

Abstract

An integrated circuit storing multiple bits per memory cell is described. The amount of charge stored in a memory cell corresponds the multiple bits in a memory cell. Dual banks of shift registers are alternately coupled to one or more data pins and to the memory cells of the memory array speed data transfer for reading and writing operation. Reading is performed in the voltage mode to conserve power. During writing operations, reading of a memory cell is performed in the voltage mode to determine whether the desired programming of the memory cell has been achieved. During the reading of a memory cell, the voltage corresponding to the amount of charge stored in a memory cell is compared against a binary search sequence of reference voltages to determine the multiple bits stored in the memory cell.

Claims

1. An integrated circuit having an array of memory cells, each memory cell capable of storing multiple bits of information, and at least one data terminal, said integrated circuit comprising a plurality of latches connected to said array of memory cells, said latches organized into a first bank and a second bank;

control means alternately coupling said first bank to said array of memory cells and said second bank to said one data terminal, and said second bank to said array of memory cells and said first bank to said one data terminal; and

whereby data is simultaneously transferred between one bank of latches and said array of memory cells and transferred between another bank of latches and said data terminal for faster read and write operations.

2. The integrated circuit of claim 1 wherein said control means couples each bank of latches to a block of memory cells in said array, said block of memory cells having M memory cells, and each bank of latches having N×

M memory cells, N latches coupled to each memory cell.

3. The integrated circuit of claim 2 wherein said control means couples a bank of latches to said data terminal serially.

4. The integrated circuit of claim 3 wherein during a writing operation, said control means alternately couples one bank of latches to said block of memory cells for a parallel transfer of data from said bank of latches to said block of memory cells, and couples another bank of latches to said data terminal for a serial transfer of data from said data terminal to said another bank of latches.

5. The integrated circuit of claim 3 wherein during a reading operation, said control means alternately couples one bank of latches to said block of memory cells for a parallel transfer of data from said block of memory cells to said bank of latches, and couples another bank of latches to said data terminal for a serial transfer of data from said another bank of latches to said data terminal.

6. The integrated circuit of claim 3 further comprising first and second data terminals, wherein during a writing operation, said control means alternatively couples one bank of latches to said block of memory cells for a parallel transfer of data from said bank of latches to said block of memory cells, and couples another bank of latches to said first data terminal for a serial transfer of data from said first data terminal to said another bank of latches;

and

during a reading operation, said control means alternatively couples one bank of latches to said block of memory cells for a parallel transfer of data from said block of memory cells to said bank of latches, and couples another bank of latches to said second data terminal for a serial transfer of data from said another bank of latches to said second data terminal.

7. The integrated circuit of claim 4 wherein said control means couples one bank of latches to said block of memory cells and couples another bank of latches to said data terminal such that during a writing operation said parallel transfer of data from said bank of latches to said block of memory cells and said serial transfer of data from said data terminal to said another bank of latches is performed in about the same amount of time.

8. The integrated circuit of claim 4 wherein said control means couples one bank of latches to said block of memory cells and couples another bank of latches to said data terminal such that during a reading operation said parallel transfer of data from said block of memory cells to said bank of latches and said serial transfer of data from said another bank of latches to said data terminal is performed in substantially the same amount of time.

9. In an integrated circuit having an array of memory cells, each memory cell storing a plurality of bits, each memory cell having first and second terminals and a control terminal, a circuit for reading said plurality of bits comprising:

a bias current reference;

multiplexer circuits responsive to address signals for connecting a selected memory cell in said array to said bias current reference; and

a voltage comparator connected to a node between said second terminal of said selected memory cell and said bias current reference, said voltage comparator further connected to a reference voltage for comparing a voltage at said node and said reference voltage to determine a bit stored in said memory cell.

10. The reading circuit of claim 9 wherein said bias current reference circuit generates a fixed bias current in the range of 0.5 to 5.0 microamperes.

11. The reading circuit of claim 9 wherein said bias current reference generates a bias current through said selected memory cell independent of a plurality of bits stored in said selected memory cell, and wherein said voltage at said node corresponds uniquely to said plurality of bits stored in said selected memory cell for said bias current.

12. The reading circuit of claim 11 further comprising:

means for sequentially changing said reference voltage in an ordered sequence to determine said plurality of bits stored in said selected memory circuit.

13. The reading circuit of claim 10 further comprising a second memory array having plurality of memory cells storing a plurality of reference voltages, said sequentially changing means connecting selected memory cells in said second memory array to said voltage comparator in said ordered sequence.

14. In an integrated circuit having an array of memory cells, a circuit for programming an amount of charge in a selected memory cell corresponding to a plurality of bits, said circuit comprising

a high voltage circuit for generating a high voltage for programming memory cells;

a voltage comparator connected to said selected memory cell and a reference voltage for comparing a voltage corresponding to said amount of charge stored in said selected memory cell and said reference voltage; and

a programming circuit connected to said high voltage circuit and said voltage comparator, said programming circuit in response to said voltage comparator engaging said high voltage circuit to program said selected memory cell until said voltage corresponding to said amount of charge stored in said selected memory cell matches said reference voltage.

15. The circuit of claim 14 further comprising:

a bias current reference; and

multiplexer circuits connecting said selected memory cell to said bias current reference;

wherein said voltage comparator is connected to a node between said selected memory cell and said bias current reference to determine said voltage corresponding to said amount of charge stored in said selected memory cell.

16. The circuit of claim 15 wherein said bias current reference generates a bias current through said selected memory cell independent of a plurality of bits stored in said selected memory cell, and wherein said voltage at said node corresponds uniquely to said plurality of bits stored in said selected memory cell for said bias current.

17. In an integrated circuit having an array of memory cells, each memory cell capable of storing multiple bits of information, a plurality of latches connected to said array of memory cells, said latches organized into a first bank and a second bank;

and

at least one data terminal, a method of operating said integrated circuit comprising alternately coupling said first bank to said array of memory cells and said second bank to said one data terminal, and said second bank to said array of memory cells and said first bank to said one data terminal; and

simultaneously transferring data between one bank of latches and said array of memory cells, and transferring data between another bank of latches and said data terminal for faster read and write operations.

18. The method of claim 17 wherein in coupling step, each bank of latches is coupled to a block of memory cells in said array, said block of memory cells having M memory cells, and each bank of latches having N×

M memory cells, N latches coupled to each memory cell.

19. The method of claim 18 wherein in said coupling step a bank of latches is coupled to said data terminal serially.

20. The method of claim 19 wherein in said coupling step, one bank of latches is alternately coupled to said block of memory cells for a parallel transfer of data from said bank of latches to said block of memory cells, and another bank of latches is coupled to said data terminal for a serial transfer of data from said data terminal to said another bank of latches, during a writing operation.

21. The method of claim 19 wherein in said coupling step, one bank of latches is alternately coupled to said block of memory cells for a parallel transfer of data from said block of memory cells to said bank of latches, and another bank of latches is alternately coupled to said data terminal for a serial transfer of data from said another bank of latches to said data terminal, during a reading operation.

22. In an integrated circuit having an array of memory cells, each memory cell having first and second terminals and a control terminal, each memory cell storing a plurality of bits, a method for reading said plurality of bits in a memory cell, comprising connecting said first terminal of said memory cell to a first voltage source;

connecting said control terminal of said memory cell to a voltage source to electrically couple said second terminal to said first terminal;

connecting said second terminal to a bias current circuit, said bias current circuit generating a fixed bias current through said second terminal; and

connecting said second terminal to a circuit for sensing a voltage at said second terminal relative to a predetermined reference voltage and generating a digital output corresponding to said sensed voltage at said second terminal.

23. The method of claim 22 wherein said second terminal connecting step includes said bias current circuit generating a fixed bias current in the range of a microampere.

24. The reading method of claim 22 wherein said fixed bias current generating step includes generating said fixed bias current through said selected memory cell independent of a plurality of bits stored in said selected memory cell, and wherein said second terminal connecting step includes sensing said voltage at said second terminal corresponding uniquely to said plurality of bits stored in said selected memory cell for said bias current.

25. In an integrated circuit having an array of memory cells, each memory cell having a floating gate capable of holding an amount of charge indicative of a logic state stored in said memory cell, a method for reading a memory cell selected from said array, comprising generating a memory cell voltage responsive to an amount of charge on a floating gate of said memory cell;

and

sequentially comparing said memory cell voltage with respect to one of a plurality of reference voltages, each sequentially comparing step determining a bit to determine a plurality of bits responsive to said amount of charge stored in said memory cell.

26. The method of claim 25 wherein said reference voltages are in a first voltage range, said sequentially comparing step comprising comparing said memory cell voltage to a first reference voltage about one-half of said first voltage range;

and

determining a first binary bit dependent upon whether said memory cell voltage is higher or lower than said first reference voltage.

27. The method of claim 26 wherein said sequentially comparing step comprises:

comparing said memory cell voltage to a second reference voltage about one-half of a second voltage range in said first voltage range, said second voltage range higher or lower than said first reference voltage depending upon whether said memory cell voltage is higher or lower than said first reference voltage; and

determining a second binary bit dependent upon whether said memory cell voltage is higher or lower than said second reference voltage.

28. The method of claim 27 wherein said sequentially comparing step comprises:

comparing said memory cell voltage to a third reference voltage above one-half of a third voltage range in said second voltage range, said third voltage range higher or lower than said second reference voltage depending upon whether said memory cell voltage is higher or lower than said second reference voltage; and

determining a third binary bit dependent upon whether said memory cell voltage is higher or lower than said third reference voltage.

29. The method of claim 25 wherein said sequentially comparing step comprises sequentially comparing said memory cell voltage to four reference voltages to determine four bits for said memory cell.

30. The method of claim 25 wherein said reference voltages are about equally spaced with respect to each other.

31. The reading method of claim 25 wherein said memory cell voltage generating step comprises

connecting said memory cell by a terminal of said memory cell to a bias current reference so that a bias current is generated through said memory cell independent of said amount of charge on said memory cell floating gate and so that voltage at said memory cell terminal corresponds uniquely to said amount of charge on said memory cell floating gate for said bias current.

32. In an integrated circuit having an array of memory cells, each memory cell having a floating gate capable of holding an amount of charge indicative of multiple bits stored in said memory cell, a method for writing to a memory cell selected from said array, comprising receiving a plurality of bits representative of multiple bits to be stored in said selected memory cell;

generating a memory cell voltage responsive to an amount of charge on a floating gate of said memory cell; and

programming a floating gate of said memory cell so that said memory cell voltage matches one of a plurality of reference voltages, said one reference voltage corresponding to said plurality of bits.

33. The method of claim 32 further comprising generating said reference voltages in said integrated circuit.

34. The method of claim 32 wherein said programming step comprises subjecting said floating gate of said memory cell to high voltage pulses until said memory cell voltage matches said one reference voltage.

35. The method of claim 34 wherein said programming step comprises erasing any charge from said floating gate;

subjecting said floating gate to high voltage pulses;

determining said memory cell voltage;

comparing said memory cell voltage with said one reference voltage; and

repeating said subjecting, determining and comparing steps until said memory cell voltage matches said one reference voltage.

36. An integrated circuit comprising

an array of memory cells, each memory cell capable of holding a voltage corresponding to a plurality of bits, said array organized into blocks, each block having reference memory cells and data memory cells;

voltage generation circuits generating first and second sets of reference voltage levels; and

programming circuits simultaneously setting voltages in said data memory cells with respect to said first set of reference voltage levels, said voltages corresponding to data bits, and setting said second set of reference voltage levels in said reference memory cells.

37. The integrated circuit of claim 36 further comprising reading circuits comparing voltages set in said data memory cells with respect to said second set of reference voltage levels in said reference memory cells to determine data bits corresponding to said set voltages in said data memory cells.

38. The integrated circuit of claim 36 further comprising an input terminal for serially receiving pluralities of data bits for setting voltages in said data memory cells.

39. The integrated circuit of claim 36 wherein said programming circuits simultaneously set voltages in all of said data memory cells in a block and said set of reference voltage levels in all of said reference memory cells in said block.

40. An integrated circuit comprising

an array of memory cells, each memory cell capable of holding a voltage corresponding to a plurality of bits, said array organized into blocks, each block having reference memory cells and data memory cells;

voltage generation circuits generating a set of reference voltage levels; and

programming circuits setting said set of reference voltage levels in said reference memory cells and setting voltages in said data memory cells with respect to said set of reference voltage levels, said voltages corresponding to data bits.

41. The integrated circuit of claim 40 wherein said programming circuits set voltages in said data memory cells with respect to said set of reference voltage levels in said reference memory cells.

42. The integrated circuit of claim 40 further comprising reading circuits comparing voltages set in said data memory cells with respect to said set of reference voltage levels in said reference memory cells to determine data bits corresponding to said set voltages in said data memory cells.

43. The integrated circuit of claim 40 further comprising an input terminal for serially receiving pluralities of data bits for setting voltages in said data memory cells.

44. The integrated circuit of claim 40 wherein said programming circuits simultaneously set voltages in all of said data memory cells in a block and said set of reference voltage levels in all of said reference memory cells in said block.

45. A method of operation in an integrated circuit having an array of memory cells, each memory cell capable of holding a voltage corresponding to a plurality of bits, said array having reference memory cells and data memory cells, said method comprising

receiving pluralities of data bits;

programming voltages in said data memory cells with reference to a first set of reference voltage levels, each voltage corresponding to a plurality of data bits; and

simultaneously programming a second set of reference voltage levels in said reference memory cells.

46. The method of claim 45 wherein said programming voltages step comprises simultaneously programming voltages in all of said data memory cells in a predetermined unit of said array and said set of reference voltage levels in all of said reference memory cells in said unit.

47. The method circuit of claim 46 further comprising comparing voltages programmed in said data memory cells with respect to said second set of reference voltage levels in said reference memory cells to determine data bits corresponding to said voltages programmed in said data memory cells.

48. The method of claim 47 wherein said comparing step comprises simultaneously comparing voltages in all of said data memory cells in said unit with respect to said set of reference voltage levels in all of said reference memory cells in said unit.

49. A method of operation in an integrated circuit having an array of memory cells, each memory cell capable of holding a voltage corresponding to a plurality of bits, said array having reference memory cells and data memory cells, said method comprising

receiving pluralities of data bits;

programming a set of reference voltage levels in said reference memory cells; and

programming voltages in said data memory cells with reference to said set of reference voltage levels, each voltage corresponding to a plurality of data bits.

50. The method of claim 49 wherein said voltage programming step comprises programming voltages in said data memory cells with respect to said set of reference voltage levels in said reference memory cells.

51. The method of claim 49 wherein said programming voltages step comprises simultaneously programming voltages in all of said data memory cells in a predetermined unit of said array and said set of reference voltage levels in all of said reference memory cells in said unit.

52. The method circuit of claim 51 further comprising comparing voltages programmed in said data memory cells with respect to said second set of reference voltage levels in said reference memory cells to determine data bits corresponding to said voltages programmed in said data memory cells.

53. The method of claim 52 wherein said comparing step comprises simultaneously comparing voltages in all of said data memory cells in said unit with respect to said set of reference voltage levels in all of said reference memory cells in said unit.

54. An integrated circuit comprising

an array of memory cells, each memory cell capable of holding a voltage corresponding to a plurality of bits, said array organized into blocks, each block having reference memory cells and data memory cells;

voltage generation circuits generating first and second sets of reference voltage levels;

programming circuits simultaneously setting voltages with respect to said first set of reference voltage levels in said data memory cells, said voltages corresponding to data bits, and setting a second set of reference voltage levels in said reference memory cells; and

reading circuits selectively comparing voltages set in said data memory cells with respect to said second set of reference voltage levels in said reference memory cells to determine data bits corresponding to said set voltages in said data memory cells, and with respect to said first set of reference voltage levels to operate with said programming circuits to set voltages with respect to said first set of reference voltage levels in said data memory cells.

55. An integrated circuit comprising an array of memory cells, each memory cell capable of holding a voltage corresponding to a plurality of bits, said array organized into blocks, each block having reference memory cells and data memory cells;

voltage generation circuits generating a set of reference voltage levels;

programming circuits setting said set of reference voltage levels in said reference memory cells and setting voltages with respect to said set of reference voltage levels in said data memory cells, said voltages corresponding to data bits; and

reading circuits selectively comparing voltages set in said data memory cells with respect to said set of reference voltage levels in said reference memory cells to determine data bits corresponding to said set voltages in said data memory cells and to operate with said programming circuits to set voltages with respect to said set of reference voltage levels in said data memory cells.