Localized plasma assisted chemical etching through a mask

• US 5,688,415 A
• Filed: 05/30/1995
• Issued: 11/18/1997
• Est. Priority Date: 05/30/1995
• Status: Expired due to Fees

• Current Assignee: Integrated Process Equipment Corp. (Speedfam Co., Ltd)
• Original Assignee: Ipec Precision, Inc.
• Inventors: Bollinger, David, Nester, Jim
• Primary Examiner(s): Paschall, Mark H.
• Application Number:
  US08/453,037
• Time in Patent Office: 903 Days
• Field of Search: 219/121.43, 219/121.44, 219/121.45, 219/121.52, 219/121.41, 437/21, 437/62, 437/63, 437/974, 364/474.3, 364/474.25, 156/630, 156/643.1, 156/646.1
• US Class Current: 219/121.41
• CPC Class Codes: G03F 1/20 Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
• CPC Class Codes: G03F 7/0007 Filters, e.g. additive colour filters; Components for display devices
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/32376 Scanning across large workpieces

Abstract

A system for the formation of circuit patterns on a large flat panel display (78) using plasma assisted chemical etching to achieve a uniform or controllably nonuniform etch depth over the entire area of the display. An overlying film (60) is provided on a large flat panel display substrate (12) with a photolithographic mask (62) overlying the film and having a predetermined pattern of openings (64) therethrough. The substrate is placed adjacent a plasma etching tool which has a projected area which is smaller than the area of the surface of the substrate. The etching tool is scanned across the surface of the substrate to transfer the pattern of the photolithographic mask into the film on the surface thereof. Thereafter, the photolithographic mask is removed from the surface of the overlying film. It is desirable to determine thickness profile data for the overlying film, then generate a dwell time versus position map for the overlying film and remove material from the exposed regions of the overlying film according to the dwell time versus position map. The substrate may be glass and the film may be silicon in either the amorphousr or polycrystalline states.

Claims

1. A method for plasma assisted, chemical etching through a mask having apertures in a predetermined pattern, said method comprising the steps of:

applying the mask to a substrate;

positioning the mask adjacent a plasma etching tool that has an electrode that is smaller in area than the area of the mask;

producing a plasma glow discharge adjacent said electrode; and

moving the plasma etching tool relative to the substrate to transfer the pattern of the mask to the substrate.

2. The method as set forth in claim 1 wherein said moving step includes the step of moving the plasma etching tool relative to the substrate at a non-uniform rate to compensate for loading effects.

3. The method as set forth in claim 1 wherein said moving step includes the step of moving the plasma etching tool relative to the substrate at a non-uniform rate to compensate for non-uniformities in the flatness of the substrate.

4. The method as set forth in claim 1 wherein said display substrate includes a film underlying the mask and the film is to be etched through and wherein said method includes the steps of:

determining when the film is etched through; and

terminating said plasma glow discharge.

5. The method as set forth in claim 4 wherein said determining step includes the steps of:

monitoring the optical emission of the plasma glow discharge for changes in emission; and

using a predetermined change in emission as indicative of the film being etched through.

6. The method as set forth in claim 4 wherein said moving step includes the step of moving the plasma etching tool relative to the substrate at a non-uniform rate to compensate for loading effects.

7. The method as set forth in claim 4 wherein said moving step includes the step of moving the plasma etching tool relative to the substrate at a non-uniform rate to compensate for irregularities in the flatness of the film.

8. The method as set forth in claim 4 wherein said moving step includes the step of moving the plasma etching tool relative to the substrate at a non-uniform rate to compensate for non-uniformities in the thickness of the film.