High density trenched DMOS transistor

• US 5,689,128 A
• Filed: 08/21/1995
• Issued: 11/18/1997
• Est. Priority Date: 08/21/1995
• Status: Expired due to Term

• Current Assignee: Siliconix Incorporated (Vishay Intertechnology Incorporated)
• Original Assignee: Siliconix Incorporated (Vishay Intertechnology Incorporated)
• Inventors: Chen, Kuo-In, Williams, Richard K., Hshieh, Fwu-Iuan, Darwish, Mohamed, Chang, Mike F.
• Primary Examiner(s): LOKE, STEVEN HO YIN
• Application Number:
  US08/533,814
• Time in Patent Office: 820 Days
• Field of Search: 257/329, 257/330, 257/331, 257/332, 257/339, 257/341, 257/342
• US Class Current: 257/331
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

The cell density of a trenched DMOS transistor is increased by overcoming the problem of lateral diffusion of deep P+body regions. This problem is solved in three versions. In a first version, the deep P+body region is formed using a high energy implant into a single epitaxial layer. In a second version, a double epitaxial layer is used with a somewhat lower but still high energy deep P+body implant. In a third version, there is no deep P+body implant but only the double epitaxial layer is used. The cell density is improved to more than 12 million cells per square inch in each of the three versions.

Claims

1. A field effect transistor comprising:

a substrate of a first conductivity type;

a first drift region of the first conductivity type having a lower dopant concentration than the substrate and formed on the substrate;

a second drift region of the first conductivity type having a dopant concentration intermediate that of the substrate and the first drift region, and overlying the first drift region;

a body region of a second conductivity type and overlying the second drift region;

a conductive gate electrode extending from a principal surface of the body region into the first drift region; and

a source region of the first conductivity type adjacent the conductive gate electrode at the principal surface of the body region.

2. The transistor of claim 1, wherein a portion of the body region which has a higher dopant concentration than that of a remaining portion thereof extends deeper into the second drift region than does the remaining portion of the body region.

3. The transistor of claim 2, wherein the portion of the body region having a higher dopant concentration extends to within 1.5 μ

m of the first drift region.

4. The transistor of claim 2, wherein the portion of the body region having a higher dopant concentration has a dopant concentration of at least 10¹⁹ /cm³.

5. The transistor of claim 1, further comprising a body contact region of the second conductivity type formed in the body region at the principal surface of the body region and having a higher dopant concentration than that of an adjacent part of the body region.

6. The transistor of claim 1, wherein a surface area of the transistor is less than 1/12 million of a square inch.

7. The transistor of claim 1, wherein a maximum thickness of the second drift region is 7 μ

m.