×

Integrated microwave semiconductor device with active and passive components

  • US 5,689,138 A
  • Filed: 10/26/1995
  • Issued: 11/18/1997
  • Est. Priority Date: 10/31/1994
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor device for microwave frequencies, comprising a substrate which is provided, at a first side, with a semiconductor element, a passive element, and a pattern of conductive elements and, at the opposed, second side, with a metallization connected to the elements present at the first side through windows formed in the substrate, the substrate being formed by a layer of silicon which is present on a layer of insulating material, the semiconductor element being formed in the silicon layer and the metallization being formed on a side of the layer of insulating material which is remote from the silicon layer.

View all claims
  • 3 Assignments
Timeline View
Assignment View
    ×
    ×