Integrated microwave semiconductor device with active and passive components

• US 5,689,138 A
• Filed: 10/26/1995
• Issued: 11/18/1997
• Est. Priority Date: 10/31/1994
• Status: Expired due to Term

• Current Assignee: Adeia Semiconductor Technologies LLC (f/k/a Invensas Corporation) (Adeia Inc.)
• Original Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Inventors: Dekker, Ronald, Maas, Henricus G. R., Van Den Einden, Wilhelmus T. A. J.
• Primary Examiner(s): TRAN, MINH LOAN
• Application Number:
  US08/548,932
• Time in Patent Office: 754 Days
• Field of Search: 257/275, 257/276, 257/277, 257/528, 257/539, 257/625, 257/663, 257/706, 257/707, 257/728, 333/247, 333/250
• US Class Current: 257/728
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 27/08 including only semiconductor components of a single kind
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor device for microwave frequencies with a substrate which is provided at a first side with a semiconductor element, a passive element, and a pattern of conductive elements, while the opposed, second side is provided with a metallization which is connected to the elements present on the first side through windows formed in the substrate. The substrate consists of a silicon layer which is present on a layer of insulating material, the semiconductor element being formed in the silicon layer, and the metallization being provided on that side of the layer of insulating material which is remote from the silicon layer. The silicon layer may here have a very small thickness of, for example, 0.1 to 0.2 μm. In such a thin silicon layer, bipolar and field effect transistors capable of processing signals of microwave frequencies can be formed. Since the silicon layer is thin, the influence of the conductivity of silicon on passive elements is small.

Claims

1. A semiconductor device for microwave frequencies, comprising a substrate which is provided, at a first side, with a semiconductor element, a passive element, and a pattern of conductive elements and, at the opposed, second side, with a metallization connected to the elements present at the first side through windows formed in the substrate, the substrate being formed by a layer of silicon which is present on a layer of insulating material, the semiconductor element being formed in the silicon layer and the metallization being formed on a side of the layer of insulating material which is remote from the silicon layer.

2. The semiconductor device of claim 1, wherein the semiconductor element is formed in an insulated silicon island, and the passive element is formed beside said silicon island on the insulating layer.

3. The semiconductor device of claim 2, wherein the substrate is fastened with its first side to an insulating body by means of a layer of glue.

4. The semiconductor device of claim 3, wherein the substrate is formed from a slice of silicon which is provided at its first side with a buried layer of silicon oxide and from which the silicon is removed from the second side down to the buried layer.

5. The semiconductor device of claim 4, wherein the metallization at the second side of the substrate is formed by electrochemically grown metal parts.

6. The semiconductor device of claim 5, wherein at least one of the grown metal parts is connected to the conductive elements provided on the first side of the substrate.

7. The semiconductor device of claim 5, wherein at least one of the electrochemically grown metal parts is connected to conductor tracks provided on an insulating carrier.

8. The semiconductor device of claim 5, wherein at least one of the grown metal parts is connected to the passive elements provided on the first side of the substrate.

9. The semiconductor device of claim 5, wherein at least one of the grown metal parts is connected to the silicon island provided on the first side of the substrate.

10. The semiconductor device of claim 5, wherein the electrochemically grown metal parts comprise bumps.

11. The semiconductor device of claim 6, wherein at least one of the grown metal parts is connected to the silicon island provided on the first side of the substrate.

12. The semiconductor device of claim 6, wherein at least one of the electrochemically grown metal parts is connected to conductor tracks provided on an insulating carrier.

13. The semiconductor device of claim 6, wherein at least one of the grown metal parts is connected to the passive elements provided on the first side of the substrate.

14. The semiconductor device of claim 11, wherein at least one of the grown metal parts is connected to the passive elements provided on the first side of the substrate.

15. The semiconductor device of claim 14, wherein the passive element is a coil formed by a metal track provided on the layer of insulating material, which track is provided with an electrochemically grown metal part over substantially its entire length through a window provided in the layer of insulating material.

16. The semiconductor device of claim 14, wherein at least one of the electrochemically grown metal parts is connected to conductor tracks provided on an insulating carrier.

17. The semiconductor device of claim 9, wherein at least one of the electrochemically grown metal parts is connected to conductor tracks provided on an insulating carrier.

18. The semiconductor device of claim 1, wherein the metallization at the second side of the substrate is formed by electrochemically grown metal parts.

19. The semiconductor device of claim 18, wherein at least one of the electrochemically grown metal parts is connected to conductor tracks provided on an insulating carrier.

20. The semiconductor device of claim 1, wherein the substrate is fastened with its first side to an insulating body by means of a layer of glue.