×

Semiconductor non-volatile ferroelectric memory transistor accompanied with capacitor for increasing potential difference applied to ferroelectric layer

  • US 5,689,456 A
  • Filed: 11/12/1996
  • Issued: 11/18/1997
  • Est. Priority Date: 11/10/1995
  • Status: Expired due to Fees
First Claim
Patent Images

1. A semiconductor non-volatile ferroelectric memory cell fabricated on a semiconductor substrate, comprising:

  • a memory transistor including source and drain regions formed on both sides of a channel region, a lower gate insulating layer formed of paraelectric material on said channel region, a lower gate electrode laminated on said lower gate insulating layer, an upper gate insulating layer formed of ferroelectric material on said lower gate electrode and an upper gate electrode formed on said upper gate insulating layer, and storing a data bit in the form of remanence in said upper gate insulating layer; and

    a paraelectric capacitor including a lower electrode electrically connected to said channel region, an insulating layer formed of paraelectric material on said lower electrode and an upper electrode electrically connected to said lower gate electrode of said memory transistor.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×