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Rapid thermal heating apparatus and control therefor

  • US 5,689,614 A
  • Filed: 07/31/1995
  • Issued: 11/18/1997
  • Est. Priority Date: 01/19/1990
  • Status: Expired due to Term
First Claim
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1. A heat source for heating a semiconductor wafer during rapid thermal processing, comprising:

  • a plurality of sources of radiant energy, each radiant energy source including a surrounding light pipe and serving to radiate a predetermined defined area of said semiconductor wafer with a pattern of radiation intensity;

    a mounting means for mounting said light pipes and said radiant energy sources next to each other so that a portion of the radiated defined area of one radiant energy source overlaps a portion of the radiated defined area of an adjacent radiant energy source; and

    a control means for controlling the intensity of each of said radiant energy sources to control the radiation at different areas of said semiconductor wafer.

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