Light absorptive antireflector

• US 5,691,044 A
• Filed: 12/12/1995
• Issued: 11/25/1997
• Est. Priority Date: 12/13/1994
• Status: Expired due to Term

• Current Assignee: Asahi Glass Company, Limited (AGC, Inc.)
• Original Assignee: Asahi Glass Company, Limited (AGC, Inc.)
• Inventors: Oyama, Takuji, Katayama, Yoshihito
• Primary Examiner(s): TURNER, ARCHENE A
• Application Number:
  US08/571,299
• Time in Patent Office: 714 Days
• Field of Search: 428/698, 428/216, 428/701, 428/702, 428/426, 428/432, 428/433, 428/469, 428/472, 428/212, 428/412, 359/359, 359/585, 359/580, 313/461
• US Class Current: 428/216
• CPC Class Codes: G02B 1/116 including electrically conducting layers
• CPC Class Codes: Y10S 428/912 Puncture healing layer
• CPC Class Codes: Y10T 428/24942 including components having same physical characteristic in differing degree
• CPC Class Codes: Y10T 428/24975 No layer or component greater than 5 mils thick
• CPC Class Codes: Y10T 428/265 1 mil or less
• CPC Class Codes: Y10T 428/31507 Of polycarbonate

Abstract

A light absorptive antireflector comprising a substrate, a light absorbing film formed on the substrate and a silica film formed on the light absorbing film, to reduce reflection of incident light from the silica film side, wherein the geometrical film thickness of the light absorbing film is from 5 to 25 nm, and the geometrical film thickness of the silica film is from 70 to 110 nm.

Claims

1. A light absorptive antireflector consisting essentially of a substrate, a light absorbing film formed on the substrate and a silica film formed on the light absorbing film, to reduce reflection of incident light from the silica film side, wherein the geometrical film thickness of the light absorbing film is from 5 to 25 nm, and the geometrical film thickness of the silica film is from 70 to 110 nm, and wherein an oxidation barrier layer of geometrical film thickness of from 1 to 20 nm is present and consists essentially of a metal or a metal nitride with oxidation barrier properties and formed between and next to the light absorbing film and the silica film.

2. The light absorptive antireflector according to claim 1, wherein the geometrical film thickness of the light absorbing film is from 7 to 20 nm.

3. The light absorptive antireflector according to claim 1, wherein the geometrical film thickness of the light absorbing film is from 10 to 20 nm.

4. The light absorptive antireflector according to claim 1, wherein the geometrical film thickness of the light absorbing film is from 7 to 15 nm.

5. The light absorptive antireflector according to claim 1, wherein the geometrical film thickness of the silica film is from 80 to 100 nm.

6. The light absorptive antireflector according to claim 1, wherein the light absorption of the light absorptive antireflector is from 10 to 35% to the incident light from the silica film side.

7. The light absorptive antireflector according to claim 1, wherein the light absorbing film is a film consisting essentially of a nitride of at least one metal selected from the group consisting of titanium, zirconium and hafnium.

8. The light absorptive antireflector according to claim 1, wherein the light absorbing film is a film consisting essentially of a nitride of titanium.

9. The light absorptive antireflector according to claim 8, wherein the film consisting essentially of a nitride of titanium is a film formed by sputtering in a sputtering gas atmosphere containing nitrogen and a rare gas as the main components, wherein the concentration of the nitrogen is from 3 to 50 vol %.

10. The light absorptive antireflector according to claim 8, wherein the film consisting essentially of a nitride of titanium, is a film containing oxygen in an amount of at most 0.5 as an atomic ratio to titanium.

11. The light absorptive antireflector according to claim 1, wherein the layer consisting essentially of the metal or metal nitride, is a layer consisting essentially of silicon or silicon nitride.

12. The light absorptive antireflector according to claim 1, wherein the substrate is a glass substrate, a plastic substrate or a plastic film.

13. The light absorptive antireflector according to claim 1, wherein the reflectance of the light absorptive antireflector does not exceed 0.6% in a wavelength region of from 500 to 650 nm.

14. A light absorptive antireflector consisting essentially of a substrate, a light absorbing film formed on the substrate, a transparent film having a high refractive index formed on the light absorbing film and a silica film formed on the transparent film, to reduce reflection of incident light from the silica film side, wherein the geometrical film thickness of the light absorbing film is from 15 to 30 nm, the geometrical film thickness of the transparent film having a high refractive index is from 10 to 40 nm, and the geometrical film thickness of the silica film is form 50 to 90 nm, and wherein an oxidation barrier layer of geometrical film thickness of from 1 to 20 nm is present and consists essentially of a metal or a metal nitride with oxidation barrier properties and is formed between and next to the light absorbing film and the transparent film, or between and next to the transparent film and the silica film.

15. The light absorptive antireflector according to claim 14, wherein the light absorption of the light absorptive antireflector is from 30 to 60% to the incident light from the silica film side.

16. The light absorptive antireflector according to claim 14, wherein the light absorbing film is a film consisting essentially of a nitride of at least one metal selected from the group consisting of titanium, zirconium and hafnium.

17. The light absorptive antireflector according to claim 14, wherein the light absorbing film is a film consisting essentially of a nitride of titanium.

18. The light absorptive antireflector according to claim 17, wherein the film consisting essentially of a nitride of titanium is a film formed by sputtering in a sputtering gas atmosphere containing nitrogen and a rare gas as main components, wherein the concentration of the nitrogen is from 3 to 50 vol %.

19. The light absorptive antireflector according to claim 17, wherein the film consisting essentially of a nitride of titanium is a film containing oxygen in an amount of at most 0.5 as the atomic ratio to titanium.

20. The light absorptive antireflector according to claim 14, wherein the layer consisting essentially of a metal or metal nitride is a layer consisting essentially of silicon or a nitride of silicon.

21. The light absorptive antireflector according to claim 14, wherein the substrate is a glass substrate, a plastic substrate or a plastic film.

22. The light absorptive antireflector according to claim 14, wherein the reflectance of the light absorptive antireflector does not exceed 0.6% in a wavelength region of from 500 to 650 nm.

23. The light absorptive reflector according to claim 14, wherein the transparent film consists essentially of a material having a refractive index of at least 1.7.

24. The light absorptive reflector according to claim 14, wherein the transparent film consists essentially of a material selected from the group consisting of Y₂ O₃, ZrO₂, ZnO, SnO₂, Ta₂ O₅ and TiO₂.

25. The light absorptive reflector according to claim 14, wherein the transparent film is electrically conductive.

26. The light absorptive reflector according to claim 25, wherein the transparent film consists essentially of tin-doped indium oxide.