C-axis oriented high temperature superconductors deposited onto new compositions of garnet
First Claim
1. A composite comprising a layer of a c-axis oriented copper oxide superconductor grown on a garnet substrate, wherein said substrate is chemically compatible with said copper oxide superconductor and has an orientation selected from the group consisting of (211)(422), (220)(440) and (420)(210), further wherein said substrate'"'"'s thermal expansion coefficient substantially matches the copper oxide superconductor'"'"'s thermal expansion coefficient, and further wherein the substrate has a mismatch of less than 4 percent with the a and b lattice parameters of the copper oxide superconductor, and wherein the substrate has a low defect density and is mechanically strong, the garnet substrate is selected from the group consisting of RE3 M2 N3 O12 where RE is Gd, Lu, or Y and where M is Sc or In, and N is Ga or Al;
- Ca3 MNGe3 O12 where M is Ti, Zr, or Ge and where N is Mg or Ca;
Na2 CaZr2 Ge3 O12 ;
Ca3 MNGa3 O12 where M is Nb, N is Zr, Hf or Sn;
Ca3 Sn3 Ga2 O12 ;
NaCa2 Sb2 Ga3 O12 ;
Ca2 LaZr2 Ga3 O12 ;
(Ca2.5 M0.5)M2 Ga3 O12 where M is Zr or Hf;
Y3-x Cax Tix Ga5-x O12 where O≦
x≦
3;
(Y3-x-y Cax+y) Zry Tix Ga5-x-y O12 where O≦
x+y+≦
3;
Y3 (Y0.505 Ga1.495) Ga3 O12 ;
Y3 (In0.6 Ga1.4) Ga3 O12 ; and
(Y1.05 Ca1.95) Ti1.95 Ga3.05 O12.
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Accused Products
Abstract
c-axis oriented high temperature superconductors are deposited onto new compositions of garnets using pulsed laser deposition (PLD) with conditions of 85 mTorr of oxygen partial pressure; a block temperature of 730° C., a substrate surface temperature of 790° C. and a laser fluence of 1 to 2 Joules/cm2 at the target, a laser repetition rate of 10 Hz and a target to substrate distance of 7 cm and in which the a and b lattice parameters of the new compositions of garnets exhibit a mismatch of less than 7 percent with the a and b lattice parameters of the HTSC.
34 Citations
1 Claim
-
1. A composite comprising a layer of a c-axis oriented copper oxide superconductor grown on a garnet substrate, wherein said substrate is chemically compatible with said copper oxide superconductor and has an orientation selected from the group consisting of (211)(422), (220)(440) and (420)(210), further wherein said substrate'"'"'s thermal expansion coefficient substantially matches the copper oxide superconductor'"'"'s thermal expansion coefficient, and further wherein the substrate has a mismatch of less than 4 percent with the a and b lattice parameters of the copper oxide superconductor, and wherein the substrate has a low defect density and is mechanically strong, the garnet substrate is selected from the group consisting of RE3 M2 N3 O12 where RE is Gd, Lu, or Y and where M is Sc or In, and N is Ga or Al;
- Ca3 MNGe3 O12 where M is Ti, Zr, or Ge and where N is Mg or Ca;
Na2 CaZr2 Ge3 O12 ;
Ca3 MNGa3 O12 where M is Nb, N is Zr, Hf or Sn;
Ca3 Sn3 Ga2 O12 ;
NaCa2 Sb2 Ga3 O12 ;
Ca2 LaZr2 Ga3 O12 ;
(Ca2.5 M0.5)M2 Ga3 O12 where M is Zr or Hf;
Y3-x Cax Tix Ga5-x O12 where O≦
x≦
3;
(Y3-x-y Cax+y) Zry Tix Ga5-x-y O12 where O≦
x+y+≦
3;
Y3 (Y0.505 Ga1.495) Ga3 O12 ;
Y3 (In0.6 Ga1.4) Ga3 O12 ; and
(Y1.05 Ca1.95) Ti1.95 Ga3.05 O12.
- Ca3 MNGe3 O12 where M is Ti, Zr, or Ge and where N is Mg or Ca;
Specification
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- Resources
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Current AssigneeThe United States Of America As Represented By The Secretary Of The Army
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Original AssigneeThe United States Of America As Represented By The Secretary Of The Army
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InventorsTidrow, Steven C., Tauber, Arthur
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Primary Examiner(s)YAMNITZKY, MARIE ROSE
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Application NumberUS08/423,173Time in Patent Office952 DaysField of Search505/238, 505/239, 505/701, 505/702, 505/703, 428/688, 428/689, 428/701, 428/702, 428/930, 385/130, 385/142, 423/263US Class Current505/239CPC Class CodesH10N 60/0604 Monocrystalline substrates,...Y10S 428/93 Electric superconductingY10S 505/701 Coated or thin film device,...
