Method of making a monolithic thin film resonator lattice filter

• US 5,692,279 A
• Filed: 08/17/1995
• Issued: 12/02/1997
• Est. Priority Date: 08/17/1995
• Status: Expired due to Fees

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Kinsman, Robert G., Mang, Luke, Hickernell, Fred S.
• Primary Examiner(s): Hall, Carl E.
• Application Number:
  US08/516,220
• Time in Patent Office: 838 Days
• Field of Search: 29/25.35, 310/324, 310/334, 310/312, 310/366, 427/100
• US Class Current: 29/25.35
• CPC Class Codes: H03H 2003/0428 of an electrode
• CPC Class Codes: H03H 3/04 for obtaining desired frequency or temperature coefficient
• CPC Class Codes: H03H 9/0095 using bulk acoustic wave devices
• CPC Class Codes: H03H 9/173 Air-gaps
• CPC Class Codes: Y10T 29/42 Piezoelectric device making

Abstract

A monolithic thin film resonator, lattice filter including spaced apart strips of a conductive film positioned on a substrate so as to define a first set of I/O terminals, a layer of piezoelectric material positioned on the conductive film, and spaced apart conductive strips of a conductive film positioned on the piezoelectric layer orthogonal to the first strips to form cross-over areas, each defining a thin film resonator and a second set of I/O terminals. A plurality of portions of a dielectric film are positioned on selected cross-over areas to mass load the thin film resonators so as to lower the resonant frequency.

Claims

1. A method of fabricating a monolithic thin film resonator, lattice filter comprising the steps of:

providing a supporting substrate with a planar surface;

positioning a first conductive film on the planar surface of the supporting substrate, the first conductive film being separated into a first pair of spaced apart conductive strips defining a first set of I/O terminals;

positioning a layer of piezoelectric material on the first conductive film;

positioning a second conductive film on the layer of piezoelectric material, the second conductive film being separated into a second pair of spaced apart conductive strips positioned orthogonal to the first pair of conductive strips with each of the second pair of conductive strips overlying a portion of each of the first pair of conductive strips at cross-over areas and defining a second set of I/O terminals, each of the cross-over areas defining a thin film resonator with a resonant frequency and the thin film resonators being arranged in a two by two array; and

positioning one each of two portions of a dielectric film of material on two of the cross-over areas to mass load two thin film resonators defined by the two cross-over areas and alter the resonant frequency of the two thin film resonators which are mass loaded, the two thin film resonators being positioned along a diagonal of the two by two array.

2. A method of fabricating a monolithic thin film resonator, lattice filter as claimed in claim 1 wherein the step of providing a supporting substrate includes the steps of:

providing a first substrate with a planar surface;

forming a cavity in the planar surface of the first substrate;

providing a second substrate with a planar surface;

positioning a layer of material on the planar surface of the second substrate so as to form a planar surface on the layer of material parallel with the planar surface of the second substrate, the layer of material being distinguished by being bondable to the planar surface of the first substrate, the layer of material being further distinguished by the second substrate being selectively etchable from the layer of material;

bonding the planar surface of the layer of material to the planar surface of the first substrate in overlying relationship to the cavity; and

etching a portion of the second substrate from the layer of material to expose an etched planar surface in an area overlying the cavity.

3. A method of fabricating a monolithic thin film resonator, lattice filter as claimed in claim 2 wherein the step of positioning the first conductive film on the planar surface of the supporting substrate includes positioning the first conductive film on the etched planar surface in the area overlying the cavity.

4. A method of fabricating a monolithic thin film resonator, lattice filter as claimed in claim 1 wherein the step of positioning the first conductive film includes depositing a layer of aluminum.

5. A method of fabricating a monolithic thin film resonator, lattice filter as claimed in claim 1 wherein the step of positioning the second conductive film includes depositing a layer of aluminum.

6. A method of fabricating a monolithic thin film resonator, lattice filter as claimed in claim 1 wherein the step of positioning one each of the plurality of portions of the dielectric film of material includes selectively depositing a layer of silicon nitride.

7. A method of fabricating a monolithic thin film resonator, lattice filter as claimed in claim 6 wherein the step of selectively depositing the layer of silicon nitride includes depositing the layer of silicon nitride using plasma enhanced chemical vapor deposition.

8. A method of fabricating a monolithic thin film resonator, lattice filter as claimed in claim 1 wherein the step of positioning the portions of dielectric film of material to mass load the thin film resonators includes forming the portions with a thickness such that the thin film resonators are mass loaded sufficiently to lower the resonant frequency of the thin film resonators and produce a frequency offset between mass loaded and unloaded thin film resonators an amount less than that required for a pole of one thin film resonator to coincide with a zero of another thin film resonator.