Growth of doped semiconductor monolayers
First Claim
1. A method of doping a compound semiconductor single crystal layer being grown in monolayers on a heated substrate in a growth chamber by alternate introduction of source gases, the growth chamber being evacuated continuously at a continuous rate of evacuation throughout the whole method, the method comprising the steps of:
- (a) introducing a first source gas containing one constituent element of the compound into the growth chamber of at least a sufficient quantity for growing one monolayer, the supply of the first source gas being thereafter stopped and the growth chamber still being kept under the continuous rate of evacuation to evacuate residual of the first source gas;
(b) introducing a second source gas containing another constituent element of the compound into the growth chamber of at least a sufficient quantity for growing one monolayer, the supply of the second source gas being thereafter stopped and the growth chamber still being kept under the continuous rate of evacuation to evacuate residual of the second source gas;
(c) doping an impurity gas into the growth chamber, the impurity gas being of a particular type and having impurities which enter into sites in the monolayer being grown;
(d) initially carrying out steps (a), (b) and (c) to grow a monolayer on the substrate and then growing monolayers one over the other by cyclically repeating steps (a), (b) and (c) to grow a new monolayer on the monolayer just previously grown; and
(e) selectively implementing an order in which steps (a), (b) and (c) take place during each cycle of step (d) based on the particular type of impurity gas being doped and selectively timing when step (c) takes place with respect to the timing of steps (a) and (b) based on obtaining a desired dopant type for the monolayer being grown and a desired level of impurity concentration in the monolayer being grown,wherein said compound is a group III-V compound and the impurity gas contains an element belonging to one of group II, group IV and group VI of the periodic table, the constituents from the first source gas are of a group III element and the constituents from the second source gas are of a group V element, the order in which steps (a), (b) and (c) are carried out is in accordance with a sequence selected from the group consisting of;
steps (a), (c) and (b) in succession where impurities from the impurity gas are selected from the group consisting of group IV element forming a donor, group II element and group VI element;
steps (a), (b) and (c) in succession where impurities from the impurity gas are selected from the group consisting of group IV element forming an acceptor, group II element and group VI element, whereby the continuous evacuation causes evacuation of residual waste of the first source gas, the second source gas, and the impurity gas.
2 Assignments
0 Petitions
Accused Products
Abstract
A cycle of alternately or cyclically introducing external gases containing molecules of component elements of a compound semiconductor to be formed on a substrate is repeated while appropriately controlling the pressure, substrate temperature and gas introduction rate in a crystal growth vessel, so that a monocrystal which is dimensionally as precise as a single monolayer can grow on the substrate by making use of chemical reactions on the heated substrate surface.
Doped molecular layer epitaxy of a compound semiconductor comprising individual steps of introducing and evacuating a first source gas, introducing and evacuating a second source gas, and introducing and evacuating an impurity gas which contains an impurity element. The doped impurity concentration varies almost linearly with the pressure during doping in a wide range.
-
Citations
32 Claims
-
1. A method of doping a compound semiconductor single crystal layer being grown in monolayers on a heated substrate in a growth chamber by alternate introduction of source gases, the growth chamber being evacuated continuously at a continuous rate of evacuation throughout the whole method, the method comprising the steps of:
-
(a) introducing a first source gas containing one constituent element of the compound into the growth chamber of at least a sufficient quantity for growing one monolayer, the supply of the first source gas being thereafter stopped and the growth chamber still being kept under the continuous rate of evacuation to evacuate residual of the first source gas; (b) introducing a second source gas containing another constituent element of the compound into the growth chamber of at least a sufficient quantity for growing one monolayer, the supply of the second source gas being thereafter stopped and the growth chamber still being kept under the continuous rate of evacuation to evacuate residual of the second source gas; (c) doping an impurity gas into the growth chamber, the impurity gas being of a particular type and having impurities which enter into sites in the monolayer being grown; (d) initially carrying out steps (a), (b) and (c) to grow a monolayer on the substrate and then growing monolayers one over the other by cyclically repeating steps (a), (b) and (c) to grow a new monolayer on the monolayer just previously grown; and (e) selectively implementing an order in which steps (a), (b) and (c) take place during each cycle of step (d) based on the particular type of impurity gas being doped and selectively timing when step (c) takes place with respect to the timing of steps (a) and (b) based on obtaining a desired dopant type for the monolayer being grown and a desired level of impurity concentration in the monolayer being grown, wherein said compound is a group III-V compound and the impurity gas contains an element belonging to one of group II, group IV and group VI of the periodic table, the constituents from the first source gas are of a group III element and the constituents from the second source gas are of a group V element, the order in which steps (a), (b) and (c) are carried out is in accordance with a sequence selected from the group consisting of; steps (a), (c) and (b) in succession where impurities from the impurity gas are selected from the group consisting of group IV element forming a donor, group II element and group VI element; steps (a), (b) and (c) in succession where impurities from the impurity gas are selected from the group consisting of group IV element forming an acceptor, group II element and group VI element, whereby the continuous evacuation causes evacuation of residual waste of the first source gas, the second source gas, and the impurity gas. - View Dependent Claims (7, 8, 10, 11, 12, 13, 14, 15, 25, 26, 27, 28)
-
-
2. A method of doping a compound semiconductor single crystal layer being grown in monolayers on a heated substrate in a growth chamber by alternate introduction of source gases, the growth chamber being evacuated continuously at a continuous rate of evacuation throughout the whole method, the method comprising the steps of:
-
(a) introducing a first source gas containing one constituent element of the compound into the growth chamber of at least a sufficient quantity for growing one monolayer, the supply of the first source gas being thereafter stopped and the growth chamber still being kept under the continuous rate of evacuation to evacuate residual of the first source gas; (b) introducing a second source gas containing another constituent element of the compound into the growth chamber of at least a sufficient quantity for growing one monolayer, the supply of the second source gas being thereafter stopped and the growth chamber still being kept under the continuous rate of evacuation to evacuate residual of the second source gas; (c) doping an impurity gas into the growth chamber, the impurity gas being of a particular type and having impurities which enter into sites in the monolayer being grown; (d) initially carrying out steps (a), (b) and (c) to grow a monolayer on the substrate and then growing monolayers one over the other by cyclically repeating steps (a), (b) and (c) to grow a new monolayer on the monolayer just previously grown; and (e) selectively implementing an order in which steps (a), (b) and (c) take place during each cycle of step (d) based on the particular type of impurity gas being doped and selectively timing when step (c) takes place with respect to the timing of steps (a) and (b) based on obtaining a desired dopant type for the monolayer being grown and a desired level of impurity concentration in the monolayer being grown, wherein the order in which steps (a), (b) and (c) take place is in accordance with an ascending numerical order of periodic table group types associated with the first source gas, the second source gas and the impurity gas, wherein the compound is a group III-V compound and the impurity gas contains an element belonging to one of the group II, group IV serving as a donor and group VI of the periodic table, whereby the continuous evacuation causes evacuation of residual waste of the first source gas, the second source gas, and the impurity gas. - View Dependent Claims (3, 4, 5, 6, 9)
-
-
16. A method of forming a single crystalline thin fill of a III-V or a II-VI compound semiconductor comprising the steps of:
-
(a) continuously evacuating the interior of a crystal growth vessel at a constant rate of evacuation; (b) heating a substrate disposed in the crystal growth vessel to a temperature of from about 300 to 800 degrees C; (c) introducing into the crystal growth vessel, under a first deposition pressure of from about 10.sup.-1 to 10-7 Pascal and for a first time period of from about 0.5 to 200 seconds, sufficient quantity of gaseous molecules of a first compound to form at least a single molecular layer of the first compound on the substrate, the first compound selected from the group consisting of group III and group II compounds respectively, which first compound contains a first constituent element of the III-V or II-VI compound semiconductor; (d) further introducing into the crystal growth vessel, under a second deposition pressure of from about 10-1 to 10-7 Pascal and for a second time period of from about 0.5 to 200 seconds, sufficient quantity of gaseous molecules of a second compound to form at least a single molecular layer of the second compound on the substrate, the second compound selected from the group consisting of group V and group VI compounds respectively, which second compound contains a second constituent element of the II-V or II-VI compound semiconductor;
a single monolayer or a dimolecular layer growing in one cycle of said introduced gaseous molecules of first and second compounds corresponding to a saturation thickness in one cycle,the single-crystalline film being at least n times as thick as a single molecular layer of the compound semiconductor, where n is an integer of 1, 2 or larger to cause growth of a monocrystalline thin film of the compound semiconductor having dimensions as precise as a single molecular layer, the step (a) being continuous for evacuating any waste of the gaseous molecules introduced to form the first and second compound; introducing first dopant gaseous molecules, the first dopant gaseous molecules being of a first dopant compound containing a first dopant element of the GaAs compound semiconductor; introducing second dopant gaseous molecules, the second dopant gaseous molecules being of a second dopant compound containing a second dopant element of the GaAs compound semiconductor; and cyclically repeating the steps (c) and (d) while heating the substrate and continuously evacuating the growth chamber so as to cause growth of a single-crystalline thin film of the compound semiconductor having a thickness determined by the number of the cyclical repetitions, the thickness being dimensionally as precise as a monolayer. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24)
-
- 29. A method of forming a monocrystalline thin film of a compound semiconductor comprising the steps of forming on a crystalline substrate a mask pattern of a material different from that of said substrate, disposing said substrate formed with said mask pattern in a crystal growth vessel after rinsing and drying, then evacuating the interior of said crystal growth vessel to a predetermined vacuum, heating said substrate, introducing gaseous molecules containing those of one component element of a compound semiconductor into said crystal growth vessel under a predetermined pressure for a predetermined period of time, evacuating the interior of said crystal growth vessel again, introducing gaseous molecules containing those of another component element of said compound semiconductor or containing a gas reacting with the first component element of said semiconductor into said crystal growth vessel under a predetermined pressure for a predetermined period of time, evacuating the interior of said crystal growth vessel again, and repeating a sequence of the above steps to cause growth of single monolayer, whereby a monocrystalline thin film of said compound semiconductor having a desired thickness is selectively formed on said substrate with precision as precise as a single monolayer.
Specification