DC magnetron sputtering method and apparatus

• US 5,693,197 A
• Filed: 10/06/1994
• Issued: 12/02/1997
• Est. Priority Date: 10/06/1994
• Status: Expired due to Fees

• Current Assignee: Komag Inc (Western Digital Corporation)
• Original Assignee: HMT Technology Corp. (Western Digital Corporation)
• Inventors: Shinohara, Tadashi, Lal, Brij Bihari, Bourez, Allen J.
• Primary Examiner(s): Nguyen, Nam
• Application Number:
  US08/319,862
• Time in Patent Office: 1,153 Days
• Field of Search: 204/298.08, 204/298.26, 204/192.12, 204/192.2, 204/192.15
• US Class Current: 204/192.2
• CPC Class Codes: C23C 14/352 using more than one target C23C14/56 takes precedence
• CPC Class Codes: G11B 5/851 Coating a support with a magnetic layer by sputtering

Abstract

A method of producing a magnetic recording medium by sputtering a layer onto a substrate by DC-magnetron sputtering from a target while exposing the target to an RF signal is described. The RF signal is effective to extend the target utilization without significantly decreasing the sputtering rate. Also disclosed is an apparatus for use forming a medium in accordance with the method of the invention.

Claims

1. In a method for producing a magnetic recording medium formed by depositing a magnetic film layer over an underlayer on a substrate, by DC-magnetron sputtering from a target, an improvement comprising,

during said depositing, exposing the target to an RF signal effective to increase the coercivity of a magnetic recording medium by at least 10%.

2. The method of claim 1, wherein said target is composed of a cobalt-based alloy.

3. The method of claim 1, wherein said DC-magnetron sputtering is at a voltage of between 300-700 volts.

4. The method of claim 1, wherein said RF signal has a signal amplitude in the range of 400-2,000 volts.