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Process for the laminar joining of silicon semiconductor slices

  • US 5,693,574 A
  • Filed: 02/04/1994
  • Issued: 12/02/1997
  • Est. Priority Date: 02/22/1991
  • Status: Expired due to Term
First Claim
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1. Process for laminar joining of at least two silicon semiconductor slices, each having a front side and a back side, under the effect of heat, with microelectronic components being integrated in a recess in the front side of one of said silicon semiconductor slices, said process comprising the steps of:

  • applying a first layer of aluminum to a front side of each of said silicon semiconductor slices;

    applying a second layer of germanium on top of said first layer of each of said silicon semiconductor slices, said first and second layers having an overall thickness of less than 10 μ

    m;

    stacking said silicon semiconductor slices on top of one another with the front sides thereof facing one another;

    causing said first and second layers to combine to form a eutectic alloy joining layer between said silicon semiconductor slices, by simultaneously applying heat and pressure to said silicon semiconductor slices.

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