Compound semiconductor device with nitride
First Claim
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1. A compound semiconductor device comprising:
- a crystal substrate; and
a first semiconductor film composed of an n-type nitride compound supported by said substrate and formed through vapor phase growth,wherein said first semiconductor film contains at least one of 1×
1015 cm-3 to 1×
1017 cm-3 of magnesium and 1×
1015 cm-3 -1×
1017 cm-3 of zinc so as to improve a shift from its three-dimensional growth to its two-dimensional growth.
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Abstract
A light emitting diode is arranged on a sapphire substrate. The light emitting diode includes an n-GaN layer, an n-InGaN light-emitting layer, a p-AlGaN layer and a P-GaN layer, which are grown through vapor phase growth in this sequence. Within the p-GaN layer and p-AlGaN layer, 1×1020 cm-3 of Mg and 2×1019 cm-3 of Mg are contained, respectively. Within each of the n-GaN layer and n-InGaN light-emitting layer, 5×1018 cm-3 of hydrogen is contained, thereby preventing Mg from diffusing therein from the p-GaN layer and p-AlGaN layer.
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Citations
20 Claims
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1. A compound semiconductor device comprising:
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a crystal substrate; and a first semiconductor film composed of an n-type nitride compound supported by said substrate and formed through vapor phase growth, wherein said first semiconductor film contains at least one of 1×
1015 cm-3 to 1×
1017 cm-3 of magnesium and 1×
1015 cm-3 -1×
1017 cm-3 of zinc so as to improve a shift from its three-dimensional growth to its two-dimensional growth. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A compound semiconductor device comprising:
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a crystal substrate; and a first semiconductor film composed of nitride compound, supported by said substrate and formed through vapor phase growth, wherein said first semiconductor film contains at least one of 1×
1016 cm-3 to 5×
1017 cm-3 of carbon, 1×
1018 cm-3 to 1×
1020 cm-3 of oxygen, 1×
1016 cm-3 to 1×
1018 cm-3 of selenium, and 1×
1016 cm-3 to 1×
1018 cm-3 of sulfur so as to fill nitrogen vacancies thereof. - View Dependent Claims (9, 10)
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11. A compound semiconductor device comprising:
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a crystal substrate; and a second semiconductor film composed of at least one of p- and i-type nitride compound supported by said substrate and formed through vapor phase growth and containing magnesium, wherein said second semiconductor film contains 1×
1016 cm-3 to 8×
1017 cm-3 of silicon so as to facilitate etching thereof. - View Dependent Claims (12, 13, 14, 15)
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16. A compound semiconductor device comprising:
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a crystal substrate; and first and second semiconductor films supported by said substrate and mutually laminated, said first semiconductor film being composed of at least one of n- and i-type nitride compound, formed through vapor phase growth, said second semiconductor film being composed of at least one of p- and i-type nitride compound containing magnesium, wherein said first semiconductor film contains 3×
1018 cm-3 to 1×
1020 cm-3 of hydrogen so as to prevent magnesium from diffusing thereinto from said second semiconductor film. - View Dependent Claims (17, 18, 19, 20)
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Specification