Combined trench and field isolation structure for semiconductor devices
First Claim
1. An isolation structure for semiconductor devices, which comprises a trench in a substrate, a body of electrically charged polysilicon in the trench, and insulating material completely surrounding the body of polysilicon.
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Accused Products
Abstract
An isolation structure providing electrical isolation in two dimensions between memory cells in semiconductor memory devices. The isolation structure comprises a trench formed in a substrate of a semiconductor memory device such as a Dynamic Random Access Memory (DRAM). The trench is lined with an insulating material and filled with polysilicon to form a floating gate. An electrical charge is then injected into the polysilicon floating gate. The isolation structure is located between memory cells in an array to provide isolation between cells in sub-micron spacing by combining the characteristics of trench and field isolation. The electrical charge is injected into the polysilicon floating gate by applying a charging voltage to the wordlines of the memory cell array. The charging voltage is applied periodically as necessary to maintain effective isolation. Two dimensional isolation is achieved by extending the trench to surround each pair of memory cells sharing a common bitline contact.
64 Citations
12 Claims
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1. An isolation structure for semiconductor devices, which comprises a trench in a substrate, a body of electrically charged polysilicon in the trench, and insulating material completely surrounding the body of polysilicon.
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2. An isolation structure for semiconductor devices, which comprises:
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a. a substrate; b. a trench in the substrate; c. first insulating material lining the trench; d. a body of polysilicon filling the lined trench; e. second insulating material overlaying the floating gate so that the body of polysilicon is completely surrounded by the first and second insulating materials, the body of polysilicon therein defining a floating gate; f. a layer of polysilicon overlaying at least a portion of the second insulating material above the floating gate; and g. a charging means comprising; 1) a sensing circuit for sensing the charge on the floating gate; 2) a booting circuit for applying a charging voltage to the layer of polysilicon; and 3) a switching circuit for connecting the layer of polysilicon to the booting circuit when the charge on the floating gate is equal to or less than a predetermined level. - View Dependent Claims (3, 4, 5, 6)
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7. A semiconductor device, which comprises a substrate having element forming regions on which semiconductor elements are formed and an isolation structure surrounding each element forming region to provide a plurality of element forming regions electrically isolated from each other, the isolation structure comprising a trench in the substrate, a body of electrically charged polysilicon in the trench, and insulating material completely surrounding the body of polysilicon.
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8. A semiconductor device, which comprises:
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a. a substrate; b. a plurality of wordlines arranged parallel to each other and extending in a row direction above the substrate; c. a plurality of bitlines arranged parallel to each other and extending in a column direction generally perpendicular to and above the wordlines; d. an isolation structure comprising a trench in the substrate, a body of electrically charged polysilicon in the trench, and insulating material completely surrounding the body of polysilicon, the polysilicon therein defining a floating gate; and e. the trench being located beneath and between multiple wordlines in the column direction. - View Dependent Claims (9, 10, 11, 12)
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Specification