Optically controlled phase shifter and phased array antenna for use therewith

• US 5,694,498 A
• Filed: 08/16/1996
• Issued: 12/02/1997
• Est. Priority Date: 08/16/1996
• Status: Expired due to Term

• Current Assignee: Sierra Nevada Co. LLC
• Original Assignee: Waveband Corporation (Sierra Nevada Co. LLC)
• Inventors: Sadovnik, Lev S., Manasson, Vladimir
• Primary Examiner(s): Bovernick, Rodney B.
• Assistant Examiner(s): Sanghavi, Hemang
• Application Number:
  US08/699,012
• Time in Patent Office: 473 Days
• Field of Search: 385/1, 385/3, 385/5-9, 385/14, 385/15, 385/27, 385/30, 385/31, 385/42, 385/49, 385/50, 342/200, 342/368, 343/762, 343/772, 343/777, 343/778, 343/700 MS, 343/853, 359/183, 359/188, 359/279
• US Class Current: 385/15
• CPC Class Codes: G02B 6/4207 with optical elements reducing the sensitivity to optical feedback anti-reflection devices specially adapted for lasers, see H01S3/0064
• CPC Class Codes: H01Q 3/2676 Optically controlled phased array

Abstract

Systems and methods for optically controlled phase shifters are described. An apparatus includes a proximal rib waveguide; a phase shifter connected to the proximal rib waveguide, the phase shifter including: a first plasma induced modulator connected to the proximal rib waveguide, the first plasma induced modulator having a first transmission coefficient a and including: a first branch waveguide connected to the proximal rib waveguide; and a first photosensitive semiconductive plasma injector connected to the first branch waveguide; a second plasma induced modulator connected to the proximal rib waveguide, the second plasma induced modulator having a second transmission coefficient b and including: a second branch waveguide connected to the proximal rib waveguide; and a second photosensitive semiconductive plasma injector connected to the second branch waveguide; and a third plasma induced modulator connected to the proximal rib waveguide, the third plasma induced modulator having a third transmission coefficient c and including: a third branch waveguide connected to the proximal rib waveguide; and a third photosensitive semiconductive plasma injector connected to the third branch waveguide. The transmission coefficients a, b and c are each ≦1. The systems and methods provide a substantial improvement in that a phased array antenna can be steered with the optically controlled phase shifters using much less controlling energy.

Claims

1. An apparatus, comprising:

a proximal rib waveguide;

a phase shifter connected to said proximal rib waveguide, said phase shifter including;

a first plasma induced modulator coquetted to said proximal rib waveguide, said first plasma induced modulator having a first transmission coefficient a and including;

a first branch waveguide connected to said proximal rib waveguide; and

a first photosensitive semiconductive plasma injector connected to said first branch waveguide;

a second plasma induced modulator connected to said proximal rib waveguide, said second plasma induced modulator having a second transmission coefficient b and including;

a second branch waveguide connected to said proximal rib waveguide; and

a second photosensitive semiconductive plasma injector connected to said second branch waveguide; and

a third plasma induced modulator connected to said proximal rib waveguide, said third plasma induced modulator having a third transmission coefficient c and including;

a third branch waveguide connected to said proximal rib waveguide; and

a third photosensitive semiconductive plasma injector connected to said third branch waveguide,

wherein a, b and c are each ≦

1.

2. The apparatus of claim 1, further comprising:

a first optical fiber connected to said first photosensitive semiconductive plasma injector with a first connector that includes a first layer of indium tin oxide;

a second optical fiber connected to said second photosensitive semiconductive plasma injector with a second connector that includes a second layer of indium tin oxide;

a third optical fiber connected to said third photosensitive semiconductive plasma injector with a third connector that includes a third layer of indium tin oxide; and

a distal rib waveguide connected to said first branch waveguide, said second branch waveguide and said third branch waveguide,

wherein said first photosensitive semiconductive plasma injector includes silicon, said second photosensitive semiconductive plasma injector includes silicon and said third photosensitive semiconductive plasma injector includes silicon.

3. The apparatus of claim 2, further comprising a first infrared light emitting diode connected to said first optical fiber with a first nonimaging coupler, a second infrared light emitting diode connected to said second optical fiber with a second nonimaging coupler and a third infrared light emitting diode connected to said third optical fiber with a third nonimaging coupler.

4. The apparatus of claim 1, wherein said first branch waveguide has a phase shift Δ

φ

₁ of approximately 0, said second branch waveguide has a phase shift Δ

φ

₂ of approximately +2π

/3λ and

said third branch waveguide has a phase shift Δ

φ

₃ of approximately -2π

/3λ

, where λ

is the wavelength of a millimeter wave source.

5. The apparatus of claim 1, further comprising a pseudomorphic high electron mobility transistor amplifier connected to said proximal rib waveguide, wherein said proximal rib waveguide i) includes a dielectric waveguide that includes polytetrafluoroethylene and ii) is at least partially covered with a metal film.

6. A method of making the apparatus of claim 1, comprising:

providing a substrate;

forming said proximal rib waveguide on said substrate;

forming said first branch waveguide on said substrate;

forming said second branch waveguide on said substrate; and

forming said third branch waveguide on said substrate.

7. A signal processing system, comprising at least two of the apparatus of claim 1.

8. A method, comprising utilizing the apparatus of claim 1.

9. An apparatus, comprising:

a first phased array including a first bus waveguide and a first plurality of phase shifters, each of said first plurality of phase shifters i) being connected to said first bus waveguide with a proximal rib wave guide and ii) including,

a first plasma induced modulator connected to said proximal rib waveguide, said first plasma induced modulator having a first transmission coefficient a and including;

a first branch waveguide connected to said proximal rib waveguide; and

a first photosensitive semiconductive plasma injector connected to said first branch waveguide;

a second plasma induced modulator connected to said proximal rib waveguide, said second plasma induced modulator having a second transmission coefficient b and including;

a second branch waveguide connected to said proximal rib waveguide; and

a second photosensitive semiconductive plasma injector connected to said second branch waveguide; and

a third plasma induced modulator connected to said proximal rib waveguide, said third plasma induced modulator having a third transmission coefficient c and including;

a third branch waveguide connected to said proximal rib waveguide; and

a third photosensitive semiconductive plasma injector connected to said third branch waveguide,

wherein a, b and c are each ≦

1.

10. The apparatus of claim 9, further comprising a second phased array connected to said first phased array with a trunk waveguide,

wherein said first phased array includes a first end feed array and said second phased array includes a second end feed array.

11. The apparatus of claim 10, wherein said first bus waveguide includes a circular dielectric waveguide, said second phased array includes a bus waveguide having a second circular dielectric waveguide, said second phased array is connected to said first phased array in parallel, said first phased array includes a first pseudomorphic high electron mobility transistor amplifier and said second phased array includes a second pseudomorphic high electron mobility transistor amplifier.

12. The apparatus of claim 9, further comprising a second phased array connected to said first phased array with a trunk waveguide,

wherein said first phased array includes a first series phase shifter array and said second phased array includes a second series phase shifter array.

13. The apparatus of claim 12, wherein said second phased array is connected to said first phased array in parallel, said first phased array includes a first pseudomorphic high electron mobility transistor amplifier and said second phased array includes a second pseudomorphic high electron mobility transistor amplifier.

14. The apparatus of claim 9, further comprising a second phased array connected to said first phased array with a trunk waveguide,

wherein said first phased array includes a first center feed array and said second phased array includes a second center feed array.

15. The apparatus of claim 14, wherein said second phased array is connected to said first phased array in parallel, said first phased array includes a first pseudomorphic high electron mobility transistor amplifier and said second phased array includes a second pseudomorphic high electron mobility transistor amplifier.

16. The apparatus of claim 9, further comprising a second phased array connected to said first phased array with a trunk waveguide,

wherein said first phased array includes a first equal path length feed array and said second phased array includes a second equal path length feed array.

17. The apparatus of claim 16, wherein said second phased array is connected to said first phased array in parallel, said first phased array includes a first pseudomorphic high electron mobility transistor amplifier and said second phased array includes a second pseudomorphic high electron mobility transistor amplifier.

18. A method of making the apparatus of claim 9, comprising:

providing a substrate;

forming said first bus waveguide on said substrate; and

forming said first branch waveguide, said second branch waveguide and said third branch waveguide of each of said first plurality of phase shifters on said substrate.

19. A signal processing system, comprising at least two of the apparatus of claim 9.

20. A method, comprising utilizing the apparatus of claim 9.

21. A method, comprising:

providing a proximal rib waveguide;

providing a phase shifter connected to said proximal rib waveguide, said phase shifter including;

a first plasma induced modulator connected to said proximal rib waveguide, said first plasma induced modulator having a first transmission coefficient a, where a≦

1, and including;

a first branch waveguide connected to said proximal rib waveguide; and

a first photosensitive semiconductive plasma injector connected to said first branch waveguide;

a second plasma induced modulator connected to said proximal rib waveguide, said second plasma induced modulator having a second transmission coefficient b, where b≦

1, and including;

a second branch waveguide connected to said proximal rib waveguide; and

a second photosensitive semiconductive plasma injector connected to said second branch waveguide; and

a third plasma induced modulator connected to said proximal rib waveguide, said third plasma induced modulator having a third transmission coefficient c, where c≦

1, and including;

a third branch waveguide connected to said proximal rib waveguide; and

a third photosensitive semiconductive plasma injector connected to said third branch waveguide;

applying an electromagnetic signal to said proximal rib waveguide;

applying a first infrared signal to said first photosensitive semiconductive plasma injector through a first optical fiber;

applying a second infrared signal to said second photosensitive semiconductive plasma injector through a second optical fiber; and

applying a third infrared signal to said third photosensitive semiconductive plasma injector through a third optical fiber.

22. The method of claim 21, wherein said electromagnetic signal includes a millimeter wave signal and an output signal amplitude I_out from said phase shifter varies as a function of an input signal amplitude I_o to said proximal rib waveguide according to a relationship

23. The method of claim 22, wherein said output signal amplitude I_out from said phase shifter varies as a function of said input signal amplitude I_o to said proximal rib waveguide according to a relationship

24. A method, comprising:

providing a proximal rib waveguide;

providing a phase shifter connected to said proximal rib waveguide, said phase shifter including;

a first plasma induced modulator connected to said proximal rib waveguide, said first plasma induced modulator having a first transmission coefficient a, where a≦

1, and including;

a first branch waveguide connected to said proximal rib waveguide; and

a first photosensitive semiconductive plasma injector connected to said first branch waveguide;

a second plasma induced modulator connected to said proximal rib waveguide, said second plasma induced modulator having a second transmission coefficient b, where b≦

1, and including;

a second branch waveguide connected to said proximal rib waveguide; and

a second photosensitive semiconductive plasma injector connected to said second branch waveguide; and

a third plasma induced modulator connected to said proximal rib waveguide, said third plasma induced modulator having a third transmission coefficient c, where c≦

1, and including;

a third branch waveguide connected to said proximal rib waveguide; and

a third photosensitive semiconductive plasma injector connected to said third branch waveguide;

collecting an electromagnetic signal from said proximal rib waveguide;

applying a first infrared signal to said first photosensitive semiconductive plasma injector through a first optical fiber;

applying a second infrared signal to said second photosensitive semiconductive plasma injector through a second optical fiber; and

applying a third infrared signal to said third photosensitive semiconductive plasma injector through a third optical fiber.