Process for producing a semiconductor substrate

• US 5,695,557 A
• Filed: 12/28/1994
• Issued: 12/09/1997
• Est. Priority Date: 12/28/1993
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Yonehara, Takao, Yamagata, Kenji
• Primary Examiner(s): Garrett, Felisa
• Application Number:
  US08/364,969
• Time in Patent Office: 1,077 Days
• Field of Search: 117/2, 117/4, 117/7, 117/97, 437/62, 437/83, 437/84
• US Class Current: 117/97
• CPC Class Codes: H01L 21/76256 using silicon etch back techniques, e.g. BESOI, ELTRAN
• CPC Class Codes: H01L 21/76259 with separation/delamination along a porous layer

Abstract

A bonded substrate and a process for its production is provided to solve the problem involved in the heat treatment which tends to cause troubles such as break, separation and warpage of the substrates bonded. A single-crystal semiconductor epitaxially grown on a porous semiconductor substrate is bonded to an insulator substrate, and the semiconductor substrate is removed by etching, grinding, or a combination of the both, where no heat treatment is carried out or, even if carried out, only once.

Claims

1. A process for producing a semiconductor substrate, comprising successively the steps of:

a) anodizing a surface layer on one side of a single-crystal semiconductor substrate to make the surface layer porous to form a porous single-crystal semiconductor layer on a non-porous single-crystal semiconductor region;

b) expitaxially growing a non-porous single-crystal semiconductor layer on said porous single-crystal semiconductor layer;

c) bringing the surface of said non-porous single-crystal semiconductor layer into close contact with the surface of an insulator substrate and then bonding both to each other without heating;

d) grinding down said non-porous single-crystal semiconductor region to remove part of said non-porous single-crystal semiconductor region;

e) heating the whole to strengthen the bond between said non-porous single-crystal semiconductor layer and said insulator substrate;

f) etching said non-porous single-crystal semiconductor region remaining after the grinding step d), to entirely remove said non-porous single-crystal semiconductor region to expose said porous single-crystal semiconductor layer; and

g) selectively etching said porous single-crystal semiconductor layer to remove said porous single-crystal semiconductor layer.

2. The process for producing a semiconductor substrate according to claim 1, wherein the etching is carried out in any of an alkali solution, an organic alkali solution and an acid solution containing hydrofluoric acid and nitric acid, kept at 100°

C. or below in the step f).

3. The process for producing a semiconductor substrate according to claim 1, wherein grinding said non-porous single-crystal semiconductor region to remove part of said non-porous single-crystal semiconductor region is carried out in the manner that said non-porous single-crystal semiconductor region remains in a thickness of 100 μ

m or more in the step d).

4. The process for producing a semiconductor substrate according to claim 1, wherein the bonding is carried out by pressing the both substrates in the step c).

5. The process for producing a semiconductor substrate according to claim 1, wherein the selective etching of said porous single-crystal semiconductor layer is carried out in an etching solution including hydrofluoric acid in the step g).

6. The process for producing a semiconductor substrate according to claim 1, wherein the surface of said non-porous single-crystal semiconductor layer is oxidized to form a surface oxide layer and the surface oxide layer is brought into close contact with the insulator substrate in the step c).

7. The process for producing a semiconductor substrate according to claim 1, wherein said insulator substrate is a light-transmitting insulator substrate.

8. The process for producing a semiconductor substrate according to claim 1, wherein said single-crystal semiconductor substrate is mainly composed of silicon.

9. The semiconductor substrate obtained by a process according to any one of claims 1 and 2-8.